scholarly journals X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 239
Author(s):  
Monzer Maarouf ◽  
Muhammad Baseer Haider ◽  
Qasem Ahmed Drmosh ◽  
Mogtaba B. Mekki
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Depth Profiling ◽  
Fused Silica ◽  
X Ray ◽  
Chemisorbed Oxygen ◽  
Different Temperatures ◽  
Hall Effect Measurements

Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.

scholarly journals Effect of Annealing Temperature on Microstructure and Resistivity of TiC Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 457
Author(s):  
Litipu Aihaiti ◽  
Kamale Tuokedaerhan ◽  
Beysen Sadeh ◽  
Min Zhang ◽  
Xiangqian Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Good Crystallinity ◽  
Different Temperatures ◽  
Amorphous States ◽  
Spherical Growth

Titanium carbide (TiC) thin films were prepared by non-reactive simultaneous double magnetron sputtering. After deposition, all samples were annealed at different temperatures under high-vacuum conditions. This paper mainly discusses the influence of deposition methods and annealing temperatures on microstructure, surface topography, bonding states and electrical resistivity of TiC films. XRD (X-ray diffraction) results show that TiC thin films can still form crystals without annealing, and the crystallinity of thin films is improved after annealing. The estimated grain size of the TiC films varies from 8.5 nm to 14.7 nm with annealing temperature. It can be seen from SEM (scanning electron microscope) images that surfaces of the films are composed of irregular particles, and when the temperature reaches to 800 °C, the shape of the particles becomes spherical. Growth rate of film is about 30.8 nm/min. Oxygen-related peaks were observed in XPS (X-ray photoelectron spectroscopy) spectra, which is due to the absorption of oxygen atoms on the surface of the film when exposed to air. Raman spectra confirm the formation of TiC crystals and amorphous states of carbon. Resistivity of TiC films decreases monotonically from 666.73 to 86.01 μΩ·cm with the increase in annealing temperature. In brief, the TiC thin films prepared in this study show good crystallinity, thermal stability and low resistivity, which can meet the requirements of metal gate applications.

Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped

2011 ◽  
Vol 328-330 ◽  
pp. 1153-1156 ◽  
Author(s):  
Kun Zhong ◽  
Yan Dong Xia ◽  
Ju Hong Miao ◽  
Jiang Fu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
X Ray

Si and Ge ions are implanted into SiO2thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from ≡Ge−Si≡ center, ≡Si−Si≡ center, SPR center and GeO center, respectively.

X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

2010 ◽  
Vol 28 (2) ◽  
pp. L1-L4 ◽  
Author(s):  
T. Miyayama ◽  
N. Sanada ◽  
M. Suzuki ◽  
J. S. Hammond ◽  
S.-Q. D. Si ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Spectroscopy Study ◽  
X Ray ◽  
Cluster Ion

scholarly journals Annealing-Driven Microstructural Evolution and Its Effects on the Surface and Nanomechanical Properties of Cu-Doped NiO Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 107 ◽  
Author(s):  
San-Ho Wang ◽  
Sheng-Rui Jian ◽  
Guo-Ju Chen ◽  
Huy-Zu Cheng ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Film Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanomechanical Properties ◽  
Glass Substrates ◽  
Structural Surface ◽  
Diffraction Peaks

The effects of annealing temperature on the structural, surface morphological and nanomechanical properties of Cu-doped (Cu-10 at %) NiO thin films grown on glass substrates by radio-frequency magnetron sputtering are investigated in this study. The X-ray diffraction (XRD) results indicated that the as-deposited Cu-doped NiO (CNO) thin films predominantly consisted of highly defective (200)-oriented grains, as revealed by the broadened diffraction peaks. Progressively increasing the annealing temperature from 300 to 500 °C appeared to drive the films into a more equiaxed polycrystalline structure with enhanced film crystallinity, as manifested by the increased intensities and narrower peak widths of (111), (200) and even (220) diffraction peaks. The changes in the film microstructure appeared to result in significant effects on the surface energy, in particular the wettability of the films as revealed by the X-ray photoelectron spectroscopy and the contact angle of the water droplets on the film surface. The nanoindentation tests further revealed that both the hardness and Young’s modulus of the CNO thin films increased with the annealing temperature, suggesting that the strain state and/or grain boundaries may have played a prominent role in determining the film’s nanomechanical characterizations.

Effects of Oxygen Partial Pressure on the Properties of SnOx Thin Films Doped with Indium

2021 ◽  
Vol 16 (5) ◽  
pp. 819-826
Author(s):  
Myeong Kyun Lyou ◽  
Hyunki Kim ◽  
SeoGwon Kim ◽  
Byung Seong Bae ◽  
Eui-Jung Yun
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hall Effect ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Hall Effect Measurement ◽  
Amorphous Structure ◽  
X Ray ◽  
Hall Effect Measurements

This study examined the effects of the oxygen partial pressure on the properties of heavily indium-doped tin-oxide (In-SnOx) thin films grown at room temperature by reactive direct-current pulse sputtering from a mixed metallic target containing Sn (70 atomic %)-In (30 atomic %). X-ray photoelectron spectroscopy (XPS), dynamic secondary-ion mass spectrometry, X-ray diffraction (XRD), and Hall Effect measurements showed that the In-SnOx samples prepared with oxygen pressures of 10–20% had metallic properties. This was attributed to the notable Sn0 area ranges of 5.6–17.3%, low resistivity ranges of 5.5×10−3–2×10−4 Ωcm, and the high carrier concentration ranges of 3.5×1021–5.1×1022/cm3. On the other hand, the Sn4+ area and the resistivity increased significantly to 73.3% and 9.4 Ωcm. In comparison, the Sn2+ area and the electron concentration decreased dramatically to 23.6% and 6.5×1016/cm3, respectively, with increasing oxygen partial pressure up to 30%. The samples prepared with oxygen pressures higher than 20% exhibited nonmetallic properties with the dominant n-type SnO2 phase. This steep increase in the Sn4+ area was attributed to an increase in the oxygen contents in the samples, resulting in a decrease in the number of oxygen vacancy donors in the samples prepared with oxygen pressures higher than 20%. The decrease in the Sn2+ area was related to a decrease in the indium (In) contents in the samples, which also decreased the number of metal acceptors in the samples. XRD also showed that the metallic indium stannide (In0.2Sn0.8) and In–Sn–O(ITO) peaks coexisted for samples prepared with an oxygen pressure of 0–10%. In contrast, the samples prepared with oxygen pressures higher than 20% had an amorphous structure with SnO2 and SnO phases, supporting the XPS and Hall Effect measurement results.

Comparison study of physical vapor-deposited and chemical vapor-deposited titanium nitride thin films using X-ray photoelectron spectroscopy

2000 ◽  
Vol 158 (3-4) ◽  
pp. 246-251 ◽  
Author(s):  
Jin Zhao ◽  
E.Gene Garza ◽  
Kinsang Lam ◽  
Clive M Jones
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Comparison Study ◽  
X Ray ◽  
Chemical Vapor Deposited

Effect of annealing temperature on growth of Ce-ZnO nanocomposite thin films: X-ray photoelectron spectroscopy study

2011 ◽  
Vol 520 (2) ◽  
pp. 721-725 ◽  
Author(s):  
M. Yousefi ◽  
R. Azimirad ◽  
M. Amiri ◽  
A.Z. Moshfegh
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Spectroscopy Study ◽  
X Ray ◽  
Nanocomposite Thin Films

scholarly journals Determination of Lithium-Ion Distributions in Nanostructured Block Polymer Electrolyte Thin Films by X-ray Photoelectron Spectroscopy Depth Profiling

ACS Nano ◽  
2014 ◽  
Vol 9 (1) ◽  
pp. 512-520 ◽  
Author(s):  
Jonathan B. Gilbert ◽  
Ming Luo ◽  
Cameron K. Shelton ◽  
Michael F. Rubner ◽  
Robert E. Cohen ◽  
...  
Keyword(s):  
Thin Films ◽  
Polymer Electrolyte ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Lithium Ion ◽  
Block Polymer ◽  
X Ray ◽  
Ion Distributions

Depth profiling of dielectric SrTiO3 thin films by angle-resolved x-ray photoelectron spectroscopy

2006 ◽  
Vol 89 (25) ◽  
pp. 254103 ◽  
Author(s):  
S. Bhaskar ◽  
Dan Allgeyer ◽  
John A. Smythe
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
X Ray
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