Effect of Annealing Temperature on Microstructure and Resistivity of TiC Thin Films

Titanium carbide (TiC) thin films were prepared by non-reactive simultaneous double magnetron sputtering. After deposition, all samples were annealed at different temperatures under high-vacuum conditions. This paper mainly discusses the influence of deposition methods and annealing temperatures on microstructure, surface topography, bonding states and electrical resistivity of TiC films. XRD (X-ray diffraction) results show that TiC thin films can still form crystals without annealing, and the crystallinity of thin films is improved after annealing. The estimated grain size of the TiC films varies from 8.5 nm to 14.7 nm with annealing temperature. It can be seen from SEM (scanning electron microscope) images that surfaces of the films are composed of irregular particles, and when the temperature reaches to 800 °C, the shape of the particles becomes spherical. Growth rate of film is about 30.8 nm/min. Oxygen-related peaks were observed in XPS (X-ray photoelectron spectroscopy) spectra, which is due to the absorption of oxygen atoms on the surface of the film when exposed to air. Raman spectra confirm the formation of TiC crystals and amorphous states of carbon. Resistivity of TiC films decreases monotonically from 666.73 to 86.01 μΩ·cm with the increase in annealing temperature. In brief, the TiC thin films prepared in this study show good crystallinity, thermal stability and low resistivity, which can meet the requirements of metal gate applications.

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Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.328-330.1153 ◽

2011 ◽

Vol 328-330 ◽

pp. 1153-1156 ◽

Cited By ~ 1

Author(s):

Kun Zhong ◽

Yan Dong Xia ◽

Ju Hong Miao ◽

Jiang Fu

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Annealing Treatment ◽

X Ray Diffraction ◽

X Ray

Si and Ge ions are implanted into SiO2thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from ≡Ge−Si≡ center, ≡Si−Si≡ center, SPR center and GeO center, respectively.

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Annealing-Driven Microstructural Evolution and Its Effects on the Surface and Nanomechanical Properties of Cu-Doped NiO Thin Films

Coatings ◽

10.3390/coatings9020107 ◽

2019 ◽

Vol 9 (2) ◽

pp. 107 ◽

Cited By ~ 5

Author(s):

San-Ho Wang ◽

Sheng-Rui Jian ◽

Guo-Ju Chen ◽

Huy-Zu Cheng ◽

Jenh-Yih Juang

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Film Surface ◽

X Ray Diffraction ◽

X Ray ◽

Nanomechanical Properties ◽

Glass Substrates ◽

Structural Surface ◽

Diffraction Peaks

The effects of annealing temperature on the structural, surface morphological and nanomechanical properties of Cu-doped (Cu-10 at %) NiO thin films grown on glass substrates by radio-frequency magnetron sputtering are investigated in this study. The X-ray diffraction (XRD) results indicated that the as-deposited Cu-doped NiO (CNO) thin films predominantly consisted of highly defective (200)-oriented grains, as revealed by the broadened diffraction peaks. Progressively increasing the annealing temperature from 300 to 500 °C appeared to drive the films into a more equiaxed polycrystalline structure with enhanced film crystallinity, as manifested by the increased intensities and narrower peak widths of (111), (200) and even (220) diffraction peaks. The changes in the film microstructure appeared to result in significant effects on the surface energy, in particular the wettability of the films as revealed by the X-ray photoelectron spectroscopy and the contact angle of the water droplets on the film surface. The nanoindentation tests further revealed that both the hardness and Young’s modulus of the CNO thin films increased with the annealing temperature, suggesting that the strain state and/or grain boundaries may have played a prominent role in determining the film’s nanomechanical characterizations.

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X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

Crystals ◽

10.3390/cryst11030239 ◽

2021 ◽

Vol 11 (3) ◽

pp. 239

Author(s):

Monzer Maarouf ◽

Muhammad Baseer Haider ◽

Qasem Ahmed Drmosh ◽

Mogtaba B. Mekki

Keyword(s):

Thin Films ◽

Titanium Nitride ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Depth Profiling ◽

Fused Silica ◽

X Ray ◽

Chemisorbed Oxygen ◽

Different Temperatures ◽

Hall Effect Measurements

Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.

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A STUDY ON THE PRECIPITATION OF Ge-RICH NANOPARTICLES IN A LUMINESCENT (Er, Ge) CO-DOPED SiO2 FILM SPUTTERED WITH Ar + O2 PLASMA

International Journal of Nanoscience ◽

10.1142/s0219581x06004681 ◽

2006 ◽

Vol 05 (04n05) ◽

pp. 493-498

Author(s):

C. L. HENG ◽

Y. J. LI ◽

J. MAYANDI ◽

T. G. FINSTAD ◽

S. JØRGENSEN ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Rf Magnetron Sputtering ◽

Sio2 Film ◽

X Ray ◽

Transmission Electron ◽

Different Temperatures ◽

Diffraction Patterns ◽

Amorphous States ◽

Co Doped

We report the photoluminescence (PL) from an ( Er , Ge ) co-doped SiO 2 film deposited by rf-magnetron sputtering in an Ar + O 2 ambience. The sample film was annealed in N 2 for 30 min at different temperatures. The PL intensity increases as the annealing temperature increases from 700 to 1000°C, and drops to very weak after 1100°C annealing. High-resolution transmission electron microscopy (TEM) observation shows that there are some Ge -rich nanoparticles precipitated after 700°C annealing, and more clusters precipitated after 1000°C annealing. However, no Ge nanocrystals were found in these films, the diffraction patterns are always halo which indicates that the precipitated clusters are in amorphous states. X-ray photoelectron spectroscopy (XPS) analysis indicates the Ge in the nanoclusters is mostly in an oxidized state and the oxidation state of Er increases with increasing annealing temperature.

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Структура и фотоэлектрические свойства пленок PbSe, осажденных в присутствии аскорбиновой кислоты

Физика и техника полупроводников ◽

10.21883/ftp.2020.10.49935.9411 ◽

2020 ◽

Vol 54 (10) ◽

pp. 1004

Author(s):

Л.Н. Маскаева ◽

В.М. Юрк ◽

В.Ф. Марков ◽

М.В. Кузнецов ◽

В.И. Bоронин ◽

...

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

X Ray Diffraction ◽

Ir Detectors ◽

X Ray ◽

Optical Band Gaps ◽

Photoelectric Properties ◽

Highly Sensitive ◽

Deposited Films

PbSe thin films chemically deposited using ascorbic acid as an antioxidant for selenourea were examined by X -ray diffraction (XRD), scanning electron microscopy (SEM) with X -ray microanalysis (EDX) and X -ray photoelectron spectroscopy (XPS). Influence of annealing temperature on chemical and phase composition, lattice parameters, surface morphology and photoelectric properties were studied. Determined that PbSe thin films contain dopant phase PbSeO3, PbSeO4, PbI2 after annealing at 633−683K. The direct and indirect optical band gaps Eg layers were observed. It has been shown that the deposited films are comparable with known commercial samples by their threshold photoelectric characteristics and can be used to create highly sensitive IR detectors.

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A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

Journal of Materials Science ◽

10.1007/s10853-021-06269-3 ◽

2021 ◽

Author(s):

Tianlei Ma ◽

Marek Nikiel ◽

Andrew G. Thomas ◽

Mohamed Missous ◽

David J. Lewis

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Mixed Valence ◽

Chemical Vapour ◽

X Ray Diffraction ◽

X Ray ◽

Conducting Oxides ◽

Valence States ◽

3 Omega ◽

First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

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The Growth and Characterization of Germanium-Carbon Alloy Thin Films

MRS Proceedings ◽

10.1557/proc-270-91 ◽

1992 ◽

Vol 270 ◽

Author(s):

Haojie Yuan ◽

R. Stanley Williams

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Vacuum Chamber ◽

Optical Band Gap ◽

High Vacuum ◽

Optical Absorption Spectroscopy ◽

Alloy Thin Film ◽

New Materials ◽

X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

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Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽

10.3390/surfaces4020013 ◽

2021 ◽

Vol 4 (2) ◽

pp. 106-114

Author(s):

Yannick Hermans ◽

Faraz Mehmood ◽

Kerstin Lakus-Wollny ◽

Jan P. Hofmann ◽

Thomas Mayer ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Fast Method ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Post Annealing ◽

Rf Signal ◽

First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

Membranes ◽

10.3390/membranes11050373 ◽

2021 ◽

Vol 11 (5) ◽

pp. 373

Author(s):

Wen-Yen Lin ◽

Feng-Tsun Chien ◽

Hsien-Chin Chiu ◽

Jinn-Kong Sheu ◽

Kuang-Po Hsueh

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

X Ray Diffraction ◽

Free Electrons ◽

X Ray ◽

Mg Content

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

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Optical properties of anatase TiO2 films modified by N ion implantation

Canadian Journal of Physics ◽

10.1139/p11-136 ◽

2012 ◽

Vol 90 (1) ◽

pp. 39-43 ◽

Cited By ~ 2

Author(s):

X. Xiang ◽

D. Chang ◽

Y. Jiang ◽

C.M. Liu ◽

X.T. Zu

Keyword(s):

Thin Films ◽

Ion Implantation ◽

Photoelectron Spectroscopy ◽

Radio Frequency Magnetron Sputtering ◽

X Ray Diffraction ◽

X Ray ◽

Atomic Force ◽

Light Region ◽

Uv Visible ◽

Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

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