scholarly journals Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1186
Author(s):  
Hong Zhou ◽  
Shifan Zeng ◽  
Jincheng Zhang ◽  
Zhihong Liu ◽  
Qian Feng ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Design Guidelines ◽  
Total Width ◽  
Guard Ring ◽  
Electrical Characteristics ◽  
Turn On ◽  
Optimal Doping Concentration ◽  
Tcad Simulation ◽  
Application Requirements ◽  
Comprehensive Study

In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode, and HJ-PN diode through the TCAD simulation. In particular, we provide design guidelines for future p-NiO-related Ga2O3 diodes with material doping concentrations and dimensions to be taken into account. Although HJ-PN has a ~1 V higher turn-on voltage (Von), its breakdown voltage (BV) is the highest among all diodes. We found that for SBD with p-NiO GRs and HJBS, their forward electrical characteristics and reverse leakage current are related to the total width and the doping concentration of p-NiO, the BV is only related to the doping concentration of p-NiO, and the optimal doping concentration of p-NiO is found to be 4 × 1017 cm−3. Compared with the SBD without p-NiO, the BV of the SBD with p-NiO and HJBS diode can be essentially improved by 3 times. As a result, HJ-PN diode, SBD with p-NiO GRs, and HJ-BS diode achieve a BV/specific on-resistance (Ron,sp) of 5705 V/4.3 mΩ·cm2, 3006 V/3.07 mΩ·cm2, and 3004 V/3.06 mΩ·cm2, respectively. Based on different application requirements, this work provides a useful insight about the diode selection with various structures.

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Alleviating luminescence concentration quenching in lanthanide doped CaF2 based nanoparticles through Na+ ion doping

2018 ◽  
Vol 47 (22) ◽  
pp. 7534-7540 ◽  
Author(s):  
Bing Xu ◽  
Dongyu Li ◽  
Zhen Huang ◽  
Chunliang Tang ◽  
Wenhao Mo ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Concentration Quenching ◽  
Optimal Doping ◽  
Ion Doping ◽  
Optimal Doping Concentration ◽  
Luminescence Concentration Quenching

Optimal doping concentration of Nd3+ shifts from 10 mol% to 30 mol% through Na+ doping, along with an ∼32 times NIR brightness increase.

Effect of Doping Concentration on Electrical Characteristics of NMOS Structure

2009 ◽  
Author(s):  
O. Suziana ◽  
B. Ayub ◽  
M. Redzuan ◽  
A. R. Shahrir ◽  
M. Y. Yunus ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Electrical Characteristics ◽  
Effect Of Doping

Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C

2010 ◽  
Vol 645-648 ◽  
pp. 961-964 ◽  
Author(s):  
Jang Kwon Lim ◽  
Mietek Bakowski ◽  
Hans Peter Nee
Keyword(s):  
Threshold Voltage ◽  
Doping Concentration ◽  
Channel Length ◽  
Channel Width ◽  
Temperature Range ◽  
Turn On ◽  
Switching Losses ◽  
Order Of Magnitude ◽  
Gate Resistance

The 1.2 kV 4H-SiC buried-grid vertical JFET structures with Normally-on (N-on) and Normally-off (N-off) design were investigated by simulations. The conduction and switching properties were determined in the temperature range from -50°C to 250°C. In this paper, the characteristics of the N-on designs with threshold voltage (Vth) of -50 V and -10 V are compared with the N-off design (Vth=0). The presented data are for devices with the same channel length at 250°C. The results show that the on-resistance (Ron) decreases with increasing channel doping concentration and decreasing channel width. The presented turn-on, Eon, and turn-off, Eoff, energies per pulse are calculated under the switching conditions 100 A/cm2 and 600 V with a gate resistance of Rg=1 . For the two N-on designs the total switching losses, Esw=Eon+Eoff, differ less than 30% with Wch 0.7 m. With Wch=0.5 m the switching losses of N-off design are almost one order of magnitude higher than those of the N-on design with Vth = -50 V.

scholarly journals Optimization and Characterization of CMOS for Ultra Low Power Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Mohd. Ajmal Kafeel ◽  
S. D. Pable ◽  
Mohd. Hasan ◽  
M. Shah Alam
Keyword(s):  
Low Voltage ◽  
Great Promise ◽  
Electrical Characteristics ◽  
Design Constraint ◽  
Voltage Level ◽  
Ultra Low Power ◽  
Operating Region ◽  
Tcad Simulation ◽  
Subthreshold Circuits

Aggressive voltage scaling into the subthreshold operating region holds great promise for applications with strict energy budget. However, it has been established that higher speed superthreshold device is not suitable for moderate performance subthreshold circuits. The design constraint for selectingVthandTOXis much more flexible for subthreshold circuits at low voltage level than superthreshold circuits. In order to obtain better performance from a device under subthreshold conditions, it is necessary to investigate and optimize the process and geometry parameters of a Si MOSFET at nanometer technology node. This paper calibrates the fabrication process parameters and electrical characteristics for n- and p-MOSFETs with 35 nm physical gate length. Thereafter, the calibrated device for superthreshold application is optimized for better performance under subthreshold conditions using TCAD simulation. The device simulated in this work shows 9.89% improvement in subthreshold slope and 34% advantage inION/IOFFratio for the same drive current.

Polymer Light-Emitting Electrochemical Cells: Doping Concentration, Emission-Zone Position, and Turn-On Time

2007 ◽  
Vol 17 (11) ◽  
pp. 1807-1813 ◽  
Author(s):  
J.-H. Shin ◽  
N. D. Robinson ◽  
S. Xiao ◽  
L. Edman
Keyword(s):  
Doping Concentration ◽  
Electrochemical Cells ◽  
Light Emitting ◽  
Turn On

Comprehensive study on the VGE overshoot during the turn-on operation for the IEGT

2014 ◽  
Vol 76 ◽  
pp. 413-424
Author(s):  
Zhuo Yang ◽  
Xiaoyuan Li ◽  
Jing Zhu ◽  
Weifeng Sun
Keyword(s):  
Turn On ◽  
Comprehensive Study

scholarly journals Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1422
Author(s):  
Ki-Yeong Kim ◽  
Joo-Seok Noh ◽  
Tae-Young Yoon ◽  
Jang-Hyun Kim
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Buffer Layers ◽  
Simulation Tool ◽  
Electrical Characteristics ◽  
Insulated Gate Bipolar Transistor ◽  
Computer Aided ◽  
Long Time ◽  
Tcad Simulation ◽  
Aided Design

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (Eoff) drops by about 7% when on-state voltage (Von) and breakdown voltage (BV) are similar. Von increases by about 0.5% and BV decreases by only about 0.8%.

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