scholarly journals Shape-Dependent Aggregation of Silver Particles by Molecular Dynamics Simulation

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 405 ◽  
Author(s):  
Xue Wang ◽  
Chaofeng Hou ◽  
Chengxiang Li ◽  
Yongsheng Han
Keyword(s):  
Building Blocks ◽  
High Viscosity ◽  
High Energy ◽  
Dynamics Simulation ◽  
Structure Evolution ◽  
Shape Effect ◽  
Silver Particles ◽  
Large Area ◽  
Research Problems ◽  
High Possibility

In crystallization, nanoparticle aggregation often leads to the formation of orderly structures, even single crystals. Why can nanoparticles form orderly structures and what is the mechanism dominating their orderly aggregation? These questions raise interesting research problems, but the occurrences that could answer them often fail to be directly observed, since the interaction among particles is invisible. Here, we report an attempt to discover the interaction and aggregation of building blocks through a computer simulation, focusing on the shape effect of building blocks on the aggregation. Four types of silver building blocks were selected, each consisting of (100) and (111) facets, but the ratio of these two facets was different. It was found that the area of facets played an important role in selecting the aggregation mode. The facets with a large area and high energy had a high possibility of aggregation. In addition, the effects of solvent viscosity and temperature were also investigated. High viscosity and low temperature enhanced the orderliness of aggregation. This paper reports a detailed view of the aggregation process of silver nanoparticles, which is expected to be helpful in understanding the structure evolution of materials in nonclassical crystallization.

P20 phosphor on polyimide as a large area high-resolution transmission screen for slow scan CCD systems

1995 ◽  
Vol 53 ◽  
pp. 20-21
Author(s):  
C. C. Ahn ◽  
S. Karnes ◽  
M. Lvovsky ◽  
C. M. Garland ◽  
H. A. Atwater ◽  
...  
Keyword(s):  
Mechanical Stability ◽  
High Energy ◽  
Practical Implementation ◽  
Line Pair ◽  
Modulation Transfer ◽  
Large Area ◽  
Ccd Imaging ◽  
Transmission Electron ◽  
The One ◽  
Beam Broadening

The bane of CCD imaging systems for transmission electron microscopy at intermediate and high voltages has been their relatively poor modulation transfer function (MTF), or line pair resolution. The problem originates primarily with the phosphor screen. On the one hand, screens should be thick so that as many incident electrons as possible are converted to photons, yielding a high detective quantum efficiency(DQE). The MTF diminishes as a function of scintillator thickness however, and to some extent as a function of fluorescence within the scintillator substrates. Fan has noted that the use of a thin layer of phosphor beneath a self supporting 2μ, thick Al substrate might provide the most appropriate compromise for high DQE and MTF in transmission electron microcscopes which operate at higher voltages. Monte Carlo simulations of high energy electron trajectories reveal that only little beam broadening occurs within this thickness of Al film. Consequently, the MTF is limited predominantly by broadening within the thin phosphor underlayer. There are difficulties however, in the practical implementation of this design, associated mostly with the mechanical stability of the Al support film.

scholarly journals Diffuse γ-ray emission toward the massive star-forming region, W40

2020 ◽  
Vol 639 ◽  
pp. A80
Author(s):  
Xiao-Na Sun ◽  
Rui-Zhi Yang ◽  
Yun-Feng Liang ◽  
Fang-Kun Peng ◽  
Hai-Ming Zhang ◽  
...  
Keyword(s):  
Cosmic Ray ◽  
High Energy ◽  
Young Star ◽  
Gas Content ◽  
Large Area ◽  
Stellar Cluster ◽  
Production Region ◽  
Star Forming ◽  
Photon Index ◽  
Young Star Clusters

We report the detection of high-energy γ-ray signal towards the young star-forming region, W40. Using 10-yr Pass 8 data from the Fermi Large Area Telescope (Fermi-LAT), we extracted an extended γ-ray excess region with a significance of ~18σ. The radiation has a spectrum with a photon index of 2.49 ± 0.01. The spatial correlation with the ionized gas content favors the hadronic origin of the γ-ray emission. The total cosmic-ray (CR) proton energy in the γ-ray production region is estimated to be the order of 1047 erg. However, this could be a small fraction of the total energy released in cosmic rays (CRs) by local accelerators, presumably by massive stars, over the lifetime of the system. If so, W40, together with earlier detections of γ-rays from Cygnus cocoon, Westerlund 1, Westerlund 2, NGC 3603, and 30 Dor C, supports the hypothesis that young star clusters are effective CR factories. The unique aspect of this result is that the γ-ray emission is detected, for the first time, from a stellar cluster itself, rather than from the surrounding “cocoons”.

scholarly journals Experimental and molecular dynamics studies of an ultra-fast sequential hydrogen plasma process for fabricating phosphorene-based sensors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Rajabali ◽  
H. Asgharyan ◽  
V. Fadaei Naeini ◽  
A. Boudaghi ◽  
B. Zabihi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Dynamics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogen Plasma ◽  
Device Fabrication ◽  
Dynamics Simulation ◽  
Red Phosphorus ◽  
Large Area ◽  
Low Concentration

AbstractLow concentration phosphorene-based sensors have been fabricated using a facile and ultra-fast process which is based on an exfoliation-free sequential hydrogen plasma treatment to convert the amorphous phosphorus thin film into mono- or few-layered phosphorene sheets. These sheets have been realized directly on silicon substrates followed by the fabrication of field-effect transistors showing the low leakage current and reasonable mobility for the nano-sensors. Being capable of covering the whole surface of the silicon substrate, red phosphorus (RP) coated substrate has been employed to achieve large area phosphorene sheets. Unlike the available techniques including mechanical exfoliation, there is no need for any exfoliation and/or transfer step which is significant progress in shortening the device fabrication procedure. These phosphorene sheets have been examined using transmission electron microscopy (TEM), Scanning electron microscopy (SEM), Raman spectroscopy and atomic-force microscopy (AFM). Electrical output in different states of the crystallization as well as its correlation with the test parameters have been also extensively used to examine the evolution of the phosphorene sheets. By utilizing the fabricated devices, the sensitivity of the phosphorene based-field effect transistors to the soluble L-Cysteine in low concentrations has been studied by measuring the FET response to the different concentrations. At a gate voltage of − 2.5 V, the range of 0.07 to 0.60 mg/ml of the L-Cysteine has been distinguishably detected presenting a gate-controlled sensor for a low-concentration solution. A reactive molecular dynamics simulation has been also performed to track the details of this plasma-based crystallization. The obtained results showed that the imparted energy from hydrogen plasma resulted in a phase transition from a system containing red phosphorus atoms to the crystal one. Interestingly and according to the simulation results, there is a directional preference of crystal growth as the crystalline domains are being formed and RP atoms are more likely to re-locate in armchair than in zigzag direction.

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Fermi LARGE AREA TELESCOPE DETECTION OF TWO VERY-HIGH-ENERGY ( E > 100 GeV) γ-RAY PHOTONS FROM THE z = 1.1 BLAZAR PKS 0426–380

2013 ◽  
Vol 777 (1) ◽  
pp. L18 ◽  
Author(s):  
Y. T. Tanaka ◽  
C. C. Cheung ◽  
Y. Inoue ◽  
Ł. Stawarz ◽  
M. Ajello ◽  
...  
Keyword(s):  
High Energy ◽  
Large Area ◽  
Very High Energy ◽  
Γ Ray ◽  
Very High

Dislocation-Stacking Fault Tetrahedron Interactions in Cu

2002 ◽  
Vol 124 (3) ◽  
pp. 329-334 ◽  
Author(s):  
B. D. Wirth ◽  
V. V. Bulatov ◽  
T. Diaz de la Rubia
Keyword(s):  
Edge Dislocation ◽  
Interatomic Potential ◽  
High Energy ◽  
Dislocation Motion ◽  
Shear Localization ◽  
Stacking Fault ◽  
Dynamics Simulation ◽  
High Energy Particle ◽  
Face Centered Cubic ◽  
Stacking Fault Tetrahedra

In copper and other face centered cubic metals, high-energy particle irradiation produces hardening and shear localization. Post-irradiation microstructural examination in Cu reveals that irradiation has produced a high number density of nanometer sized stacking fault tetrahedra. The resultant irradiation hardening and shear localization is commonly attributed to the interaction between stacking fault tetrahedra and mobile dislocations, although the mechanism of this interaction is unknown. In this work, we present results from a molecular dynamics simulation study to characterize the motion and velocity of edge dislocations at high strain rate and the interaction and fate of the moving edge dislocation with stacking fault tetrahedra in Cu using an EAM interatomic potential. The results show that a perfect SFT acts as a hard obstacle for dislocation motion and, although the SFT is sheared by the dislocation passage, it remains largely intact. However, our simulations show that an overlapping, truncated SFT is absorbed by the passage of an edge dislocation, resulting in dislocation climb and the formation of a pair of less mobile super-jogs on the dislocation.

Molecular Dynamics Simulations of High Energy Cascades in Iron

1994 ◽  
Vol 373 ◽  
Author(s):  
Roger E. Stoller
Keyword(s):  
Molecular Dynamics ◽  
Three Dimensional ◽  
High Energy ◽  
Dynamics Simulation ◽  
Method Of Molecular Dynamics ◽  
Energy Cascades ◽  
Iron Based ◽  
The Many ◽  
Property Changes ◽  
Dynamics Simulations

AbstractA series of high-energy, up to 20 keV, displacement cascades in iron have been investigated for times up to 200 ps at 100 K using the method of molecular dynamics simulation. Thesimulations were carried out using the MOLDY code and a modified version of the many-bodyinteratomic potential developed by Finnis and Sinclair. The paper focuses on those results obtained at the highest energies, 10 and 20 keV. The results indicate that the fraction of the Frenkel pairs surviving in-cascade recombination remains fairly high in iron and that the fraction of the surviving point defects that cluster is lower than in materials such as copper. In particular, vacancy clustering appears to be inhibited in iron. Some of the interstitial clusters were observed to exhibit an unexpectedly complex, three-dimensional morphology. The observations are discussed in terms of their relevance to microstructural evolution and mechanical property changes in irradiated iron-based alloys.

Correlation Between the V-I Characteristics of (0001) 4H-SiC PN Junctions Having Different Structural Features and Synchrotron X-ray Topography

2008 ◽  
Vol 1069 ◽  
Author(s):  
Ryoji Kosugi ◽  
Toyokazu Sakata ◽  
Yuuki Sakuma ◽  
Tsutomu Yatsuo ◽  
Hirofumi Matsuhata ◽  
...  
Keyword(s):  
High Energy ◽  
Structural Features ◽  
Incidence Geometry ◽  
Voltage Source ◽  
Large Area ◽  
Chip Area ◽  
Power Mosfets ◽  
X Ray ◽  
Pn Junctions ◽  
The Difference

ABSTRACTIn practical use of the SiC power MOSFETs, further reduction of the channel resistance, high stability under harsh environments, and also, high product yield of large area devices are indispensable. Pn diodes with large chip area have been already reported with high fabrication yield, however, there is few reports in terms of the power MOSFETs. To clarify the difference between the simple pn diodes and power MOSFETs, we have fabricated four pn-type junction TEGs having the different structural features. Those pn junctions are close to the similar structure of DIMOS (Double-implanted MOS) step-by-step from the simple pn diodes. We have surveyed the V-I characteristics dependence on each structural features over the 2inch wafer. Before their fabrication, we formed grid patterns with numbering over the 2inch wafer, then performed the synchrotron x-ray topography observation. This enables the direct comparison the electrical and spectrographic characteristics of each pn junctions with the fingerprints of defects.Four structural features from TypeA to TypeD are as follows. TypeA is the most simple structure as same as the standard pn diodes formed by Al+ ion implantation (I/I), except that the Al+ I/I condition conforms to that of the p-well I/I in the DIMOS. The JTE structure was used for the edge termination on all junctions. While the TypeA consists of one p-type region, TypeB and TypeC consists of a lot of p-wells. The difference of Type B and C is a difference of the oxide between the adjacent p-wells. The oxide of TypeB consists of the thick field oxide, while that of TypeC consists of the thermal oxide corresponding to the gate oxide in the DIMOS. In the TypeD structure, n+ region corresponding to the source in the DIMOS was added by the P+ I/I. The TypeD is the same structure of the DIMOS, except that the gate and source contacts are shorted. The V-I measurements of the pn junctions are performed using the KEITHLEY 237 voltage source meters with semi-auto probe machine. An active area of the fabricated pn junctions TEGs are 150um2 and 1mm2. Concentration and thickness of the drift layer are 1e16cm−3 and 10um, respectively.In order to compare the V-I characteristics of fabricated pn junctions with their defects information that obtained from x-ray topography measurements directly, the grid patterns are formed before the fabrication. The grid patterns were formed over the 2inch wafer by the SiC etching. The synchrotron x-ray topography measurements are carried out at the Beam-Line 15C in Photon-Factory in High-Energy-Accelerator-Research-Organization. Three diffraction conditions, g=11-28, -1-128, and 1-108, are chosen in grazing-incidence geometry (improved Berg-Barrett method).In the presentation, the V-I characteristics mapping on the 2inch wafer for each pn junctions, and the comparison of V-I characteristics with x-ray topography will be reported.

Terahertz continuous-wave large-area traveling-wave photomixers on high-energy low-dose ion-implanted GaAs

2007 ◽  
Vol 90 (17) ◽  
pp. 171109 ◽  
Author(s):  
E. A. Michael ◽  
I. Cámara Mayorga ◽  
R. Güsten ◽  
A. Dewald ◽  
R. Schieder
Keyword(s):  
Traveling Wave ◽  
Low Dose ◽  
Continuous Wave ◽  
High Energy ◽  
Large Area ◽  
Ion Implanted
Sign in / Sign up

Export Citation Format

Share Document