Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC

2020 ◽  
Vol 1004 ◽  
pp. 278-283
Author(s):  
Lev V. Shakhov ◽  
Alexander A. Lebedev ◽  
Natalia. V. Seredova ◽  
Sergey P. Lebedev ◽  
Vitalii V. Kozlovski ◽  
...  
Keyword(s):  
Single Crystals ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Radiation Defects ◽  
Photoluminescence Spectra ◽  
Structural Perfection ◽  
Twin Boundaries ◽  
Pl Spectra ◽  
Donor Acceptor

The photoluminescence spectra were studied in 3C-SiC / 4H-SiC heterostructures and single crystals of 3C-SiC. It was shown that 3C-SiC epitaxial layers grown on 4H-SiC substrates have significantly less structural perfection than 3C-SiC single crystals. It was found that doping with aluminum leads to the appearance of characteristic photoluminescence (PL) both in the epitaxial layers and in 3C-SiC single crystals. At the same time, the irradiation of the epitaxial layers does not lead to the appearance of “defective PL (DFL), as is observed for single crystals. It was suggested that the twin boundaries existing in 3C-SiC epitaxial layers could serve as getters of radiation defects that are components of donor – acceptor pairs (DAP) responsible for DFL.

scholarly journals Исследование влияния структурных дефектов на спектры фотолюминесценции в n-3C-SiC

2019 ◽  
Vol 45 (11) ◽  
pp. 28
Author(s):  
А.А. Лебедев ◽  
И.П. Никитина ◽  
Н.В. Середова ◽  
Н.К. Полетаев ◽  
С.П. Лебедев ◽  
...  
Keyword(s):  
Single Crystals ◽  
Electron Irradiation ◽  
Epitaxial Layers ◽  
Radiation Defects ◽  
Twin Boundaries ◽  
Crystal Perfection ◽  
Pl Spectra ◽  
Donor Acceptor

AbstractPhotoluminescence (PL) spectra have been studied in 3 C -SiC/4 H -SiC heterostructures and 3 C ‑SiC single crystals. It was shown that epitaxial 3 C -SiC layers grown on 4 H -SiC substrates have a markedly poorer crystal perfection than do 3 C -SiC single crystals. It was found that doping with aluminum gives rise to a characteristic PL both in epitaxial layers and in 3 C -SiC single crystals. At the same time, the electron irradiation of epitaxial layers does not give rise to defect-related PL, in contrast to what is observed for single crystals. An assumption is made that the twin boundaries existing in epitaxial 3 C -SiC layers can serve as getters of radiation defects that are components of donor–acceptor pairs responsible for the “defect-related” PL.

Time-resolved photoluminescence in CdIn2S4

1987 ◽  
Vol 65 (3) ◽  
pp. 204-207 ◽  
Author(s):  
S. Charbonneau ◽  
E. Fortin ◽  
J. Beauvais
Keyword(s):  
Single Crystals ◽  
Free Electron ◽  
Continuous Wave ◽  
Time Window ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Spectral Bands ◽  
Window Technique ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence

Photoluminescence spectra of CdIn2S4 single crystals at 1.8 K under both continuous-wave (CW) and pulsed excitation were obtained. In the latter case, a variable time-window technique was used to observe the time evolution of the spectra between 0 and 100 μs. In contrast to previous studies, four spectral bands were observed under both CW and pulsed, intrinsic or extrinsic excitation. In particular, two bands previously unobserved under extrinsic excitation were detected at 1.35 and 1.68 eV, and have been attributed to donor–acceptor pairs and free-electron to acceptor transitions respectively.

Photoluminescence spectra of undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals

2001 ◽  
Vol 16 (5) ◽  
pp. 1520-1524 ◽  
Author(s):  
Moon-Seog Jin ◽  
Choong-Il Lee ◽  
Chang-Sun Yoon ◽  
Chang-Dae Kim ◽  
Jae-Mo Goh ◽  
...  
Keyword(s):  
Single Crystals ◽  
Energy Levels ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Chemical Transport Reaction ◽  
Ionic Radii ◽  
Transport Reaction ◽  
Broad Emission ◽  
Electron Transitions ◽  
Donor Acceptor

Undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals were grown by the chemical transport reaction method. The optical energy band gaps of the BaAl2S4 and BaAl2Se4 were found to be 4.10 and 3.47 eV, respectively, at 5 K. In their photoluminescence spectra measured at 5 K, broad emission peaks at 459 and 601 nm appeared in the BaAl2S4 and at 486 and 652 nm in the BaAl2Se4. These emissions are assigned to donor–acceptor pair recombinations. Sharp emission peaks were observed in the Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals at 5 K. Taking into account the ionic radii of the cations and Sm3+, these sharp emission peaks are attributed to the electron transitions between the energy levels of Sm3+ substituting with the Ba site.

scholarly journals Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 115 ◽  
Author(s):  
A.A. Lebedev ◽  
G.A. Oganesyan ◽  
V.V. Kozlovski ◽  
I.A. Eliseyev ◽  
P.V. Bulat
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Structural Defects ◽  
Radiation Defects ◽  
Photoluminescence Spectra ◽  
Radiation Induced ◽  
Cubic Silicon Carbide ◽  
Effect Method

The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.

scholarly journals Annealing Behavior of The Photoluminescence Lines in CdTe and Znx Cd1−x Te Single Crystals

1989 ◽  
Vol 161 ◽  
Author(s):  
J. Gonzalez-Hernandez ◽  
A. Reyes-Mena ◽  
Elias Lopez-Cruz ◽  
D.D. Allred ◽  
Worth P. Allred
Keyword(s):  
Single Crystals ◽  
Mixed Crystals ◽  
Band Edge ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Photoluminescence Spectra ◽  
Edge Emission ◽  
Annealing Behavior ◽  
Pl Spectra ◽  
Compositional Range

ABSTRACTThe main lines in the photoluminescence spectra of Zn1Cd1−xTe single crystals grown by a modified Bridgman method in the compositional range of 0 ≤ X ≤ 0.25 have been identified. All crystals show only near-band-edge emission. To assist in the identification, various samples with different compositions were annealed under a Cd atmosphere. In the pure crystals, the prominent (A°,X) bound exciton line, as well as the doublet at longer wavelengths, disappear after the annealing. In contrast, the treatments do not change significantly the PL spectra of the mixed crystals.

Optical properties of Ho3+-, Er3+-, and Tm3+-doped BaIn2S4 and BaIn2Se4 single crystals

2002 ◽  
Vol 17 (8) ◽  
pp. 2147-2152 ◽  
Author(s):  
Sang-An Park ◽  
Mi-Yang Kim ◽  
Wha-Tek Kim ◽  
Moon-Seog Jin ◽  
Sung-Hyu Choe ◽  
...  
Keyword(s):  
Single Crystals ◽  
Energy Gap ◽  
Photoluminescence Spectra ◽  
Optical Energy Gap ◽  
Acceptor Pair ◽  
Chemical Transport Reaction ◽  
Transport Reaction ◽  
Optical Energy ◽  
Broad Emission ◽  
Donor Acceptor

BaIn2S4, BaIn2S4:Ho3+, BaIn2S4:Er3+, BaIn2S4:Tm3+, BaIn2Se4, BaIn2Se4:Ho3+, BaIn2Se4:Er3+, and BaIn2Se4:Tm3+ single crystals were grown by the chemical transport reaction method. The optical energy gap of the single crystals was found to be 3.057, 2.987, 2.967, 2.907, 2.625, 2.545, 2.515, and 2.415 eV, respectively, at 11 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Broad emission peaks were observed in the photoluminescence spectra of the single crystals. They were assigned to donor–acceptor pair recombination. Sharp emission peaks were observed in the doped single crystals. They were attributed to be due to radiation recombination between the Stark levels of the Ho3+, Er3+, and Tm3+ ions sited in C1 symmetry.

Oxygen related shallow acceptor in GaN

2004 ◽  
Vol 831 ◽  
Author(s):  
B. Monemar ◽  
P. P. Paskov ◽  
F. Tuomisto ◽  
K. Saarinen ◽  
M. Iwaya ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Epitaxial Layers ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
General Correlation ◽  
Mocvd Growth ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTWe report on deliberate O doping of GaN epitaxial layers during MOCVD growth, using H2O and CO2 as precursors. The photoluminescence spectra show a dominant 3.27 eV emission at 2 K known to be a donor-acceptor pair (DAP) transition. In our samples the intensity of this DAP spectrum correlates with the commonly observed 3.466 eV acceptor bound exciton (ABE) peak, suggesting these spectra are related to the same acceptor. The general correlation of these acceptor spectra with O concentration (as established with SIMS data) suggest that the acceptor is O-related, most likely a VGa-O complex. The concentration was measured with positron annihilation spectroscopy and found to be in the 1016 cm−3 -1017 cm−3 range in different samples. Considering previous results the identity of this residual acceptor is suggested to be a VGa-O-H complex. Previous suggestions that this acceptor is related to Mg, Si or C are discussed and found to be less likely.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Excitation Power Dependence of Photoluminescence in CIB and FIB Implanted Superlattices

1991 ◽  
Vol 240 ◽  
Author(s):  
A. G. Choo ◽  
H. E. Jackson ◽  
P. Chen ◽  
A. J. Steckl ◽  
V. Gupta ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Peak Position ◽  
Excitation Power ◽  
Excitation Intensity ◽  
Power Dependence ◽  
Photoluminescence Spectra ◽  
Multiple Scan ◽  
Donor Acceptor ◽  
Low Temperature Photoluminescence

ABSTRACTLow temperature photoluminescence spectra have been used to characterize conventional ion beam (CIB) and focused ion beam (FIB) implanted superlattices. The excitation dependence of the single scan FIB is found to be significantly different from CIB and multiple scan FIB implantations which are similar. The peak position of the donor-acceptor transition is observed to change to higher energies significantly slower with excitation intensity for the single scan FIB case when compared to the multiple scan FIB and CIB cases. Simple models to describe these effects are briefly discussed.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

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