scholarly journals Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4976
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Klavdia S. Davydovskaya ◽  
Mikhail E. Levinshtein
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Radiation Hardness ◽  
Main Mechanism ◽  
Deep Acceptor ◽  
High Temperature Electronics ◽  
Temperature Electron

The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.

Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000144-000151
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
James M. McGarrity ◽  
Anant Agarwal
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Efficiency ◽  
Schottky Diodes ◽  
Power Converter ◽  
Electronic Systems ◽  
High Temperature Electronics ◽  
New Material ◽  
Silicon Power Devices ◽  
Relationship Of

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.

Effect of 3C-SiC Irradiation with 8 MeV Protons

2017 ◽  
Vol 897 ◽  
pp. 311-314 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Boris Ya. Ber ◽  
Gagik A. Oganesyan ◽  
Sergey V. Belov ◽  
Natalia. V. Seredova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Initial Concentration ◽  
A Value ◽  
Full Compensation ◽  
Mev Protons

Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm-1. The full compensation of samples with an initial concentration of (1-2) x 1018 cm -3 was estimated to occur at doses of about 6 x 1015 cm -2. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.

Challenges for High Temperature Silicon Carbide Electronics

2003 ◽  
Vol 764 ◽  
Author(s):  
C.-M. Zetterling ◽  
S.-M. Koo ◽  
E. Danielsson ◽  
W. Liu ◽  
S.-K. Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
Process Technology ◽  
High Temperature Electronics ◽  
Higher Power ◽  
Device Structures ◽  
Power Densities

AbstractSilicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

2019 ◽  
Vol 963 ◽  
pp. 730-733
Author(s):  
Alexander A. Lebedev ◽  
Klavdya S. Davydovskaya ◽  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Radiation Defect ◽  
Room Temperature ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Structural Defects ◽  
Radiation Defects

The influence of 15 MeV proton irradiation temperatures (room temperature (RT) - 700 ° C) on the processes of defect formation in commercially available 4H-SiC JBS structures has been studied. It has been shown that the carrier removal rate does not depend on the irradiation temperature. At the same time, the irradiation temperature affected on the spectrum of introduced radiation defects. The conclusion about the possible influence of SiC crystal lattice structural defects on the processes of radiation defect formation has been made.

scholarly journals Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 115 ◽  
Author(s):  
A.A. Lebedev ◽  
G.A. Oganesyan ◽  
V.V. Kozlovski ◽  
I.A. Eliseyev ◽  
P.V. Bulat
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Structural Defects ◽  
Radiation Defects ◽  
Photoluminescence Spectra ◽  
Radiation Induced ◽  
Cubic Silicon Carbide ◽  
Effect Method

The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.

Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes

2020 ◽  
Vol 46 (3) ◽  
pp. 287-289 ◽  
Author(s):  
V. V. Kozlovski ◽  
O. Korol’kov ◽  
K. S. Davidovskaya ◽  
A. A. Lebedev ◽  
M. E. Levinshtein ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
High Power ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Irradiation Temperature

Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures

2018 ◽  
Vol 924 ◽  
pp. 217-220 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Klavdia S. Davydovskaya ◽  
Anatoly M. Strel'chuk ◽  
Andrey N. Yakimenko ◽  
Vitalii V. Kozlovski
Keyword(s):  
High Temperature ◽  
Radiation Resistance ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Schottky Diodes ◽  
Simultaneous Effect ◽  
Current Voltage ◽  
Device Structures ◽  
Current Voltage Characteristics ◽  
Mev Protons

The change in the current-voltage characteristics and in Nd-Navalues in the base of 4H-SiC Schottky diodes and JBS diodes under irradiation with 0.9 MeV electrons and 15 MeV protons has been studied. The carrier removal rate for the diodes irradiated with electrons was 0.07-0.15 cm-1, and that in the case of protons, 50-70 cm-1. It was shown that the devices under study retain rectifying current-voltage characteristics up to electron doses of ~1017cm-2. It was found that the radiation resistance of the SiC-based devices significantly exceeds that of silicon p-i-n-diodes with similar breakdown voltages. The simultaneous effect of high temperature and proton irradiation on the characteristics of 4H-SiC pn structures was examined.

Silicon Carbide High Temperature Operational Amplifier

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000378-000383 ◽  
Author(s):  
Alexey Vert ◽  
Cheng-Po Chen ◽  
Amita Patil ◽  
Rich Saia ◽  
Emad Andarawis ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Analog Circuits ◽  
Operational Amplifier ◽  
Silicon On Insulator ◽  
Operational Amplifiers ◽  
Attractive Alternative ◽  
Harsh Environment ◽  
Test Fixture ◽  
High Temperature Electronics

Development of silicon carbide operational amplifier offers an attractive alternative building block for the replacement of silicon and silicon-on-insulator analog circuits in harsh environment applications. NMOS-based enhancement mode silicon carbide device technology was utilized to demonstrate feasibility of operational amplifiers for use in harsh environment applications. This study reports on the results of characterization of operational amplifiers at room temperature and high temperatures up to 350°C. The development of high temperature packaging techniques enabled assembly of a functional oscillator board tested up to 350°C. A test fixture with high temperature sockets enabling quick swap of operational amplifiers is also discussed as an important tool in high temperature electronics research and development.

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