scholarly journals Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1494
Author(s):  
Sami Ghedira ◽  
Abdelaali Fargi ◽  
Kamel Besbes
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Potential ◽  
Wide Bandgap ◽  
Temperature Dependent ◽  
Lateral Channel ◽  
Source Voltage ◽  
Effect Transistor

The wide-bandgap (WBG) semiconductor devices for modern power electronics require intensive efforts for the analysis of the critical aspects of their operation. In recent years, silicon carbide (SiC) based field effect transistor have been extensively investigated. Motivated by the significant employment of the SiC Vertical Junction Field Effect transistors with lateral channel (LC-VJFET) in the development of high-voltage and high temperature applications, the properties of the LC-VJFET device are investigated in this work. The most important normally-ON LC-VJFET parameter is their threshold voltage (VTh), which is defined as the gate-to-source voltage necessary to block the device. The higher complexity of the blocking operation of the normally-ON device makes the accurate knowledge of the VTh as a fundamental issue. In this paper, a temperature dependent analytical model for the threshold voltage of the normally-ON LC-VJFET is developed. This analytical model is derived based on a numerical analysis of the electrical potential distribution along the asymmetrical lateral channel in the blocking operation. To validate our model, the analytical results are compared to 2D numerical simulations and experimental results for a wide temperature range.

Improving Stability of Pentacene Field-Effect Transistors with Post-Annealing

2007 ◽  
Vol 1029 ◽  
Author(s):  
Shun-Wei Liu ◽  
Jia-Cing Huang ◽  
Chih-Chien Lee ◽  
Chin-Ti Lee ◽  
Juen-Kai Wang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Annealing Treatment ◽  
Drain Current ◽  
Semiconductor Layer ◽  
Post Annealing ◽  
Source Voltage ◽  
Effect Transistor ◽  
Improved Performance ◽  
Contact Field

AbstractIn this report, we demonstrate that the performance and stability of pentacene top-contact field-effect transistor can be greatly improved with post-annealing treatment. After post-annealing at 90°C for 12 hours in nitrogen environment, the hole field-effect mobility of 0.3 cm2/Vs and the on/off current ratio of 107 were achieved, demonstrating 100% improvement in performance after the post-annealing treatment. The decay rate of drain current at constant gate and drain-source voltage was found to be decreased by more than 40%. The improved performance is attributed to the elimination of trapped holes and lattice defects in the organic semiconductor layer due to the post-annealing process.

Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis

2008 ◽  
Vol 92 (15) ◽  
pp. 152113 ◽  
Author(s):  
P. Kordoš ◽  
D. Donoval ◽  
M. Florovič ◽  
J. Kováč ◽  
D. Gregušová
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Dependent

THRESHOLD AND SATURATION VOLTAGES MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT-FETs)

NANO ◽  
2008 ◽  
Vol 03 (03) ◽  
pp. 195-201 ◽  
Author(s):  
JOSE M. MARULANDA ◽  
ASHOK SRIVASTAVA ◽  
ASHWANI K. SHARMA
Keyword(s):  
Carbon Nanotube ◽  
Analytical Model ◽  
Threshold Voltage ◽  
Field Effect ◽  
Close Agreement ◽  
Field Effect Transistors ◽  
Graphical Modeling ◽  
Chiral Vector ◽  
Modeling Techniques ◽  
Model Equations

We present analytical model equations for threshold voltage (Vth) and saturation voltage (Vds,sat) characterizing CNT-FETs. These model equations have been obtained from the charge and potential distributions between the gate and substrate in a CNT-FET. It is shown that both Vth and Vds,sat are strongly dependent on chiral vectors of CNTs. The results show close agreement between theoretical and graphical modeling techniques. It is also shown that the calculated Vth of a CNT-FET with chiral vector (3, 1) is in close agreement with the corresponding published work.

Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
Byung-Seong Bae ◽  
Deok-Ho Cho ◽  
Jae-Hee Lee ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Field Effect Mobility ◽  
Temperature Dependent ◽  
Hydrogenated Amorphous ◽  
Very Low Temperature

ABSTRACTWe investigated the temperature dependent characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) at temperatures down to 20 K. With decreasing temperature, the threshold voltage increased, the field effect mobility and the on-current decreased. The measured on-currents versus inverse temperature above 80 K are represented as the sum of two exponentially varied currents. It is concluded that on-current is nearest-neighbour hopping between 120 K and 80 K. Below this temperature, the temperature dependence of on-current is explained by variable range hopping and below about 30 K on-current becomes nearly independent of temperature. At very low temperature hopping probability may be governed not by temperature but by temperature independent tunneling, depending on the overlap of the wave function. The explanation of threshold voltage increase at low temperature is given.

NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS

2009 ◽  
Vol 23 (19) ◽  
pp. 3871-3880 ◽  
Author(s):  
RAHIM FAEZ ◽  
SEYED EBRAHIM HOSSEINI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Conventional Structure ◽  
Source Voltage ◽  
Effect Transistor ◽  
Output Characteristics ◽  
Novel Structures

A carbon nanotube field effect transistor (CNTFET) has been studied based on the Schrödinger–Poisson formalism. To improve the saturation range in the output characteristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (Vds) can be used, which results in higher output power. In the digital circuits, higher Vds increases noise immunity.

Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

2014 ◽  
Vol 54 (1) ◽  
pp. 44-48 ◽  
Author(s):  
M. Saeidmanesh ◽  
M. Rahmani ◽  
H. Karimi ◽  
M. Khaledian ◽  
Razali Ismail
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Bilayer Graphene ◽  
Double Gate

scholarly journals UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 999
Author(s):  
Manuel Bastuck ◽  
Donatella Puglisi ◽  
Anita Lloyd Spetz ◽  
Andreas Schütze ◽  
Tilman Sauerwald ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Dynamic Responses ◽  
Gate Bias ◽  
Dynamic Effects ◽  
Temperature Dependent ◽  
Relaxation Effects ◽  
Gas Identification ◽  
Effect Transistor

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

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