scholarly journals Fabrication of Planar Heating Chuck Using Nichrome Thin Film as Heating Element for PECVD Equipment

Electronics ◽  
2021 ◽  
Vol 10 (20) ◽  
pp. 2535
Author(s):  
Dong Hyeok Im ◽  
Tae Woong Yoon ◽  
Woo Sig Min ◽  
Sang Jeen Hong
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Heating Element ◽  
Temperature Uniformity ◽  
Temperature Elevation ◽  
Spiral Pattern ◽  
Important Goal ◽  
Structural Limitation

Improving semiconductor equipment and components is an important goal of semiconductor manufacture. Especially during the deposition process, the temperature of the wafer must be precisely controlled to form a uniform thin film. In the conventional plasma-enhanced chemical vapor deposition (PECVD) chuck, heating rate, and temperature uniformity are limited by the spiral pattern and volume of the heating element. To overcome the structural limitation of the heating element of conventional chuck, we tried to develop the planar heating chuck (PHC), a 6-inch PECVD chuck with a planar heating element based on NiCr thin film that would be a good candidate for rapidly and uniformly heating. The time for the temperature elevation from room temperature to 330 °C was 398 s. In a performance evaluation, the fabricated PHC successfully completed a SiO2 PECVD process.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

scholarly journals CVD and PVD coating process modelling by using artificial neural networks

2012 ◽  
Vol 1 (1) ◽  
pp. 46 ◽  
Author(s):  
Amir Mahyar Khorasani ◽  
Mohammad Reza Solymany yazdi ◽  
Mehdi Faraji ◽  
Alex Kootsookos
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Coating ◽  
Deposition Process ◽  
Thin Film Coating ◽  
Mlp Neural Network ◽  
Titanium Thin Film ◽  
Pvd Coating

Thin-film coating plays a prominent role on the manufacture of many industrial devices. Coating can increase material performance due to the deposition process. Having adequate and precise model that can predict the hardness of PVD and CVD processes is so helpful for manufacturers and engineers to choose suitable parameters in order to obtain the best hardness and decreasing cost and time of industrial productions. This paper proposes the estimation of hardness of titanium thin-film layers as protective industrial tools by using multi-layer perceptron (MLP) neural network. Based on the experimental data that was obtained during the process of chemical vapor deposition (CVD) and physical vapor deposition (PVD), the modeling of the coating variables for predicting hardness of titanium thin-film layers, is performed. Then, the obtained results are experimentally verified and very accurate outcomes had been attained.

Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method

MRS Bulletin ◽  
1989 ◽  
Vol 14 (10) ◽  
pp. 48-53 ◽  
Author(s):  
J.V. Mantese ◽  
A.L. Micheli ◽  
A.H. Hamdi ◽  
R.W. Vest
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Precursor ◽  
Metalorganic Deposition ◽  
Constituent Elements ◽  
Film Method

There are many methods of depositing thin film materials: thermal evaporation, sputtering, electron or laser beam evaporation, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE). A good survey of many of the deposition methods appears in the 1988 November and December issues of the MRS BULLETIN. One method not included in that survey, however, is metalorganic deposition (MOD), a powerful method for depositing a variety of materials.Metalorganic deposition is not to be confused with metalorganic chemical vapor deposition (MOCVD), which is a gaseous deposition method. MOD is a nonvacuum, liquid-based, spin-on method of depositing thin films. A suitable organic precursor, dissolved in solution, is dispensed onto a substrate much like photoresist. The substrate is spun at a few thousand revolutions per minute, removing the excess fluid, driving off the solvent, and uniformly coating the substrate surface with an organic film a few microns thick. The soft metalorganic film is then pyrolyzed in air, oxygen, nitrogen, or other suitable atmosphere to convert the metalorganic precursors to their constituent elements, oxides, or other compounds. Figure 1 shows a schematic of the deposition process including a prebake and annealing (if necessary).

Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia

2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Self Assembly ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Pore Density ◽  
Hot Wire ◽  
Precise Positioning ◽  
Selective Chemical

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.

Optimization of Chemical Vapor Deposition Process

2006 ◽  
Author(s):  
Pradeep George ◽  
Hae Chang Gea ◽  
Yogesh Jaluria
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Response Surface ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Transport Processes ◽  
Operating Conditions ◽  
Design Parameters ◽  
Large Area

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

The Simulation of Polycrystalline Silicon Thin Film Deposition in PECVD System

2011 ◽  
Vol 189-193 ◽  
pp. 2032-2036 ◽  
Author(s):  
Zhi Jian Wang ◽  
Xiao Feng Shang
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Main Reaction ◽  
Silicon Thin Film ◽  
Simulation Results

Taking Silicon tetrachloride (SiCl4) and hydrogen (H2) as the reaction gas, by the method of plasma-enhanced chemical vapor deposition (PECVD), this paper simulates the deposition process of polycrystalline silicon thin film on the glass substrates in the software FLUENT. Three dimensional physical model and mathematics model of the simulated area are established. The reaction mechanism including main reaction equation and several side equations is given during the simulation process. The simulation results predict the velocity field, temperature distribution, and concentration profiles in the PECVD reactor. The simulation results show that the deposition rate of silicon distribution is even along the circumference direction, and gradually reduced along the radius direction. The deposition rate is about 0.005kg/(m2•s) at the center. The simulated result is basically consistent with the practical one. It means that numerical simulation method to predict deposition process is feasible and the results are reliable in PECVD system.

Aerosol-Assisted CVD of SnO2 Thin Films for the Room-Temperature Detection of Hydrogen Sulfide

2013 ◽  
Vol 543 ◽  
pp. 422-425
Author(s):  
Huan Liu ◽  
Min Li ◽  
Jiu Xiao Wan ◽  
Jun Zhao ◽  
Qiu Yun Fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Room Temperature ◽  
Gas Sensing ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Temperature Detection ◽  
Low Concentrations ◽  
Initial Resistance ◽  
Deposition Conditions

High-quality SnO2 thin-film materials capable of detecting H2S gas of low concentrations at room temperature was demonstrated in this paper. We employed aerosol-assisted chemical vapor deposition process for the deposition of SnO2 thin films on alumina substrates with pre-patterned electrodes. The gas-sensing performances of the films prepared under different deposition conditions were systematically compared and analyzed. When SnCl2·2H2O was used as the precursor, a response sensitivity of 98.4 toward 50 ppm of H2S at room temperature was achieved. At room temperatures, the resistance upon the H2S gas exposure could recover to 90% of the initial resistance of the sensor when the H2S gas flow was turned off.

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