scholarly journals An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1066 ◽  
Author(s):  
Zhen Hu ◽  
Wenfeng Zhang ◽  
Juai Wu
Keyword(s):  
Thermal Model ◽  
Junction Temperature ◽  
Good Time ◽  
Model Parameters ◽  
Step Process ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Solder Fatigue ◽  
Update Process ◽  
Key Parameter

Junction temperature is a key parameter that influences both the performance and the reliability of the insulated gate bipolar transistor (IGBT) module, while solder fatigue has a significant effect on the accuracy of junction temperature estimates using the electro-thermal model. In this paper, an improved electro-thermal model, which is independent of solder fatigue, is proposed to accurately estimate the junction temperature of IGBT module. Firstly, solder fatigue conditions are monitored in real time with the information of the case temperatures. Secondly, when solder fatigue is found, the update process of the electro-thermal model parameters is performed to match the model parameters with the fatigue device. With the above two-step process, the influence of solder fatigue on the accuracy of temperature estimates can be removed in good time. Experimental results are provided to validate the effectiveness of the proposed method.

scholarly journals Electro-Thermal Modeling of Power IGBT Module Cooled by A Heat Pipe Cooling System

2021 ◽  
Vol 86 (1) ◽  
pp. 105-122
Author(s):  
Améni Driss ◽  
Samah Maalej ◽  
Mohamed Chaker Zaghdoudi
Keyword(s):  
Heat Pipe ◽  
Thermal Model ◽  
Cooling System ◽  
Junction Temperature ◽  
Electrical Parameters ◽  
Safe Operation ◽  
Insulated Gate Bipolar Transistor ◽  
Thermal Capacitance ◽  
Igbt Module ◽  
Model Predictions

This paper deals with the development of an electro-thermal model of an Insulated Gate Bipolar Transistor (IGBT) with a water-cooled heat pipe cooling system. Firstly, a thermal model of the heat pipe cooling system is proposed. Then, an electro-thermal model of the IGBT is developed to predict the junction temperature variations in transient operation. The thermal model of the IGBT is determined on the base of the thermal-capacitance lumped method. The electrical model of the IGBT is developed by considering the effect of the junction temperature on its static electrical parameters. Finally, the electro-thermal model is considered in a boost converter application. The model predictions show the effectiveness of the heat pipe cooling system for different commutation frequencies. It is proved that the heat pipe cooling system can keep the junction temperature of the IGBT at values allowing safe operation.

scholarly journals An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3962 ◽  
Author(s):  
Zilang Hu ◽  
Xinglai Ge ◽  
Dong Xie ◽  
Yichi Zhang ◽  
Bo Yao ◽  
...  
Keyword(s):  
Evaluation Method ◽  
Junction Temperature ◽  
Normal Operation ◽  
Monitoring Method ◽  
Bonding Wire ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Bond Wire ◽  
Artificial Neural Network Ann ◽  
Multivariate Monitoring

The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.

scholarly journals A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Energies ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 851 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Hurley
Keyword(s):  
Working Conditions ◽  
Conduction Mechanism ◽  
Electrical Parameter ◽  
Physical Structure ◽  
Model Parameters ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Detailed Method ◽  
Simulation Results

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

Thermal Model Based Fault Detection and Isolation of Power Inverter IGBT Module

2018 ◽  
Author(s):  
Madi Zholbaryssov ◽  
Azeem Sarwar
Keyword(s):  
Fault Detection ◽  
Thermal Model ◽  
New Technologies ◽  
Mechanical Energy ◽  
Electrical Energy ◽  
Fault Detection And Isolation ◽  
Fuel Prices ◽  
Insulated Gate Bipolar Transistor ◽  
Model Based ◽  
Igbt Module

Penetration of electrified vehicles has increased steadily over the last decade due to unstable fuel prices, and the ability of such vehicle to offer lower cost per mile for transportation. At the same time, strict fuel emission standards continue to motivate the auto industry to invest resources on developing new technologies, which allow economically feasible electrification of vehicles and enable mass production. In electric vehicles, the electric drive system converts electrical energy into mechanical energy that powers the vehicle wheels. In this article, we present thermal model based fault detection and isolation methodology for power inverter insulated gate bipolar transistor (IGBT) modules, which play a key role in converting DC power from the battery into AC power that goes into the electric motor and drives the wheels through the transmission module. We do not propose any additional sensing capability, and make use of what is typically available in most of the production vehicles today across the industry. Results are presented from simulation studies that highlight the effectiveness of our proposed method.

scholarly journals A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Collector Current ◽  
Insulated Gate Bipolar Transistor ◽  
Dependent Part ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Bond Wire ◽  
Separation Strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

scholarly journals An Anti-Interference Online Monitoring Method for IGBT Bond Wire Aging

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1449
Author(s):  
Chuankun Wang ◽  
Yigang He ◽  
Yunfeng Jiang ◽  
Lie Li
Keyword(s):  
Online Monitoring ◽  
Junction Temperature ◽  
Collector Current ◽  
Monitoring Method ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Three Phase ◽  
Bond Wires ◽  
Bond Wire ◽  
Three Phase Inverter

Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.

scholarly journals Design and Analysis of the IGBT Heat Dissipation Structure Based on Computational Continuum Mechanics

Entropy ◽  
2020 ◽  
Vol 22 (8) ◽  
pp. 816
Author(s):  
Xin Lin ◽  
Huawei Wu ◽  
Zhen Liu ◽  
Baosheng Ying ◽  
Congjin Ye ◽  
...  
Keyword(s):  
Temperature Field ◽  
Vector Field ◽  
Heat Dissipation ◽  
The Other ◽  
Junction Temperature ◽  
Insulated Gate Bipolar Transistor ◽  
Wind Speeds ◽  
Igbt Module ◽  
Dissipation Structure ◽  
Fin Thickness

With the trend of high integration and high power of insulated gate bipolar transistor (IGBT) components, strict requirements have been placed on the heat dissipation capabilities of the IGBT devices. On the basis of traditional rectangular fins, this paper developed two new types of heat-dissipating fins to meet the high requirements of heat dissipation for the IGBT devices. One is the rectangular radiator with a groove length of 2.5 mm and a width of 0.85 mm, the other is the arc radiator with the angle of 125 arc angle, 0.8 mm arc height, and 1.4 mm circle radius. After theoretically calculating the IGBT junction temperature, numerical simulations have been implemented to verify the theoretical result. The commercial CFD software, STAR-CCM+, was employed to simulate the heat dissipation characteristics of the IGBT module under different wind speeds, power, and fin structures. By analyzing the temperature field and vector field of the IGBT module, the analysis results demonstrate that the error between the simulation result and the theoretical calculation is within 5%, which proves the feasibility of the newly designed heat-dissipating fins. When the wind speed is 12.5 m/s, the power is 110 W, the fin height is 31.2 mm, and the fin thickness is 2.3 mm, the rectangular radiator can achieve the best heat dissipation performance.

scholarly journals A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 194
Author(s):  
Dan Luo ◽  
Minyou Chen ◽  
Wei Lai ◽  
Hongjian Xia ◽  
Xueni Ding ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Power Dissipation ◽  
Resistance Measurement ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Solder Fatigue ◽  
Lift Off ◽  
Resistance Decrease

Bond wire lift-off will cause an increase of remaining wires’ power dissipation, which usually is ignored for healthy modules. However, only partial wires’ power dissipation transfers through thermal path from junction to case, which will lead to overestimate the whole power dissipation from collector to emitter pole and underestimate the calculated thermal resistance using the proportion of temperature difference to power dissipation. A FEM model is established to show the change of heat flow after bond wires were removed, the temperature of bond wires increases, and the measured thermal resistance decrease after bond wires lift-off. It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. This conclusion might be helpful to indicate the bond wires lift-off and solder fatigue by comparing the change of measured thermal resistance. Using the Kelvin setup to measure thermal resistance will cause misjudgment of failure mode due to the ignoring of wires’ power dissipation. This paper proposed that the lift-off of bond wires will lead to underestimating the thermal resistance measurement, which will overestimate the lifetime of IGBT module and misjudge its state of health.

Preferential Orientation of Photochromic Gadolinium Oxyhydrides

2020 ◽  
Author(s):  
Elbruz Murat Baba ◽  
Jose Montero ◽  
Dmitrii Moldarev ◽  
Marcos V. Moro ◽  
Max Wolff ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rare Earth ◽  
Preferential Orientation ◽  
Reactive Magnetron ◽  
Flow Ratio ◽  
Deposition Pressure ◽  
Step Process ◽  
Oxidation In Air ◽  
Key Parameter

<p>We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH<sub>2-x</sub>) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations, and photochromic response of the films are strongly dependent on the deposition pressure. GdHO films show preferential orientation along the [100] direction and exhibit photochromism when synthesized at deposition pressures up to 5.8 Pa and. The photochromic contrast is larger than 20 % when the films are deposited below 2.8 Pa with 0.22 H<sub>2</sub>/Ar flow ratio. We argue that the degree of preferential orientation defines the oxygen concentration which is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above are explained by the oxidation-induced decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas. </p>

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