scholarly journals A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Energies ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 851 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Hurley
Keyword(s):  
Working Conditions ◽  
Conduction Mechanism ◽  
Electrical Parameter ◽  
Physical Structure ◽  
Model Parameters ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Detailed Method ◽  
Simulation Results

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

scholarly journals The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Shengqi Zhou ◽  
Luowei Zhou ◽  
Suncheng Liu ◽  
Pengju Sun ◽  
Quanming Luo ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Diagnostic Method ◽  
Approximate Entropy ◽  
Key Factors ◽  
Silicon Chips ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Before And After ◽  
Parasitic Parameters

Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. For this reason, a novel diagnostic method based on the approximate entropy (ApEn) theory is presented in this paper, which can provide statistical diagnosis and allow the operator to replace defective IGBT modules timely. The proposed method is achieved by analyzing the cross ApEn of the gate voltages before and after the occurring of defects. Due to the local damage caused by aging, the intrinsic parasitic parameters of packaging materials or silicon chips inside the IGBT module such as parasitic inductances and capacitances may change over time, which will make remarkable variation in the gate voltage. That is to say the gate voltage is close coupled with the defects. Therefore, the variation is quantified and used as a precursor parameter to evaluate the health status of the IGBT module. Experimental results validate the correctness of the proposed method.

scholarly journals An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1066 ◽  
Author(s):  
Zhen Hu ◽  
Wenfeng Zhang ◽  
Juai Wu
Keyword(s):  
Thermal Model ◽  
Junction Temperature ◽  
Good Time ◽  
Model Parameters ◽  
Step Process ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Solder Fatigue ◽  
Update Process ◽  
Key Parameter

Junction temperature is a key parameter that influences both the performance and the reliability of the insulated gate bipolar transistor (IGBT) module, while solder fatigue has a significant effect on the accuracy of junction temperature estimates using the electro-thermal model. In this paper, an improved electro-thermal model, which is independent of solder fatigue, is proposed to accurately estimate the junction temperature of IGBT module. Firstly, solder fatigue conditions are monitored in real time with the information of the case temperatures. Secondly, when solder fatigue is found, the update process of the electro-thermal model parameters is performed to match the model parameters with the fatigue device. With the above two-step process, the influence of solder fatigue on the accuracy of temperature estimates can be removed in good time. Experimental results are provided to validate the effectiveness of the proposed method.

scholarly journals A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Collector Current ◽  
Insulated Gate Bipolar Transistor ◽  
Dependent Part ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Bond Wire ◽  
Separation Strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

scholarly journals Development of energy-efficient IBC with IGBT module for photovoltaic applications

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kumar C Prasanna ◽  
Anand Rao
Keyword(s):  
Experimental Analysis ◽  
Energy Efficient ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Photovoltaic Applications ◽  
Interleaved Boost Converter ◽  
Power Diode

AbstractThe proposed study is improvised value-engineered modifications for the basic interleaved boost converter (IBC) by including relevant modifications in circuits, which is expected for a better performance in switching with reduction in losses. The newly modified IBC circuit with insulated gate bipolar transistor (IGBT) along with converter has been experimented by simulations and the results are tabulated to modified IBC with metal oxide silicon field effect transistors. Further experimental analysis and validations of the proposed simulation with hardware developed adopting model SKM195GB066D consisting of IGBTs is presented. This study further enhances and summarises the optimum utilisation and the performance of IBC with the proposed IGBT modules that synchronises power diode. Enhancing the simulation outcomes, the hardware is proposed and developed to be tested for a load up to 1.5 kW with the evaluation of key parameters such as efficiency of the converter.

scholarly journals A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 194
Author(s):  
Dan Luo ◽  
Minyou Chen ◽  
Wei Lai ◽  
Hongjian Xia ◽  
Xueni Ding ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Power Dissipation ◽  
Resistance Measurement ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Solder Fatigue ◽  
Lift Off ◽  
Resistance Decrease

Bond wire lift-off will cause an increase of remaining wires’ power dissipation, which usually is ignored for healthy modules. However, only partial wires’ power dissipation transfers through thermal path from junction to case, which will lead to overestimate the whole power dissipation from collector to emitter pole and underestimate the calculated thermal resistance using the proportion of temperature difference to power dissipation. A FEM model is established to show the change of heat flow after bond wires were removed, the temperature of bond wires increases, and the measured thermal resistance decrease after bond wires lift-off. It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. This conclusion might be helpful to indicate the bond wires lift-off and solder fatigue by comparing the change of measured thermal resistance. Using the Kelvin setup to measure thermal resistance will cause misjudgment of failure mode due to the ignoring of wires’ power dissipation. This paper proposed that the lift-off of bond wires will lead to underestimating the thermal resistance measurement, which will overestimate the lifetime of IGBT module and misjudge its state of health.

scholarly journals Modeling of German Low Voltage Cables with Ground Return Path

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1265 ◽  
Author(s):  
Johanna Geis-Schroer ◽  
Sebastian Hubschneider ◽  
Lukas Held ◽  
Frederik Gielnik ◽  
Michael Armbruster ◽  
...  
Keyword(s):  
Low Voltage ◽  
Measurement Data ◽  
Analytical Calculation ◽  
Laboratory Measurement ◽  
Model Parameters ◽  
Calculation Methods ◽  
Modeling Approach ◽  
Measurement Results ◽  
Simulation Results ◽  
Return Path

In this contribution, measurement data of phase, neutral, and ground currents from real low voltage (LV) feeders in Germany is presented and analyzed. The data obtained is used to review and evaluate common modeling approaches for LV systems. An alternative modeling approach for detailed cable and ground modeling, which allows for the consideration of typical German LV earthing conditions and asymmetrical cable design, is proposed. Further, analytical calculation methods for model parameters are described and compared to laboratory measurement results of real LV cables. The models are then evaluated in terms of parameter sensitivity and parameter relevance, focusing on the influence of conventionally performed simplifications, such as neglecting house junction cables, shunt admittances, or temperature dependencies. By comparing measurement data from a real LV feeder to simulation results, the proposed modeling approach is validated.

Wide-Band Modeling of the IGBT Module Based on the Physical Structure

2014 ◽  
Vol 986-987 ◽  
pp. 1954-1957
Author(s):  
Hai Feng Sun ◽  
Xiao Ming Wu ◽  
Chen Da Zheng ◽  
Xiao Qian Liu
Keyword(s):  
Objective Function ◽  
Optimization Algorithm ◽  
Physical Meaning ◽  
Wide Band ◽  
Physical Structure ◽  
High Accuracy ◽  
Suitable Model ◽  
Igbt Module ◽  
Distribution Parameters ◽  
Iterative Optimization Algorithm

This paper presents a new modeling method, based on the physical structure of the IGBT module, considering the distribution parameters of high frequency.This method is simple and the wideband model has physical meaning, by choosing suitable model initial parameters as well as the objective function which use the iterative optimization algorithm to solve the model parameters.Comparing the wideband model with the measured results ,the wideband model maintain high accuracy in the range of 100KHz ~ 20MHz.

Compressive Strength Analysis of MWD Microchip Tracer

2014 ◽  
Vol 511-512 ◽  
pp. 561-564
Author(s):  
Ji Bo Li ◽  
Wei Ning Ni ◽  
San Guo Li ◽  
Zu Yang Zhu
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Compressive Strength ◽  
Working Conditions ◽  
Failure Criterion ◽  
Strength Analysis ◽  
Design Phase ◽  
Key Issues ◽  
Simulation Results ◽  
Better Than

Pressure resistant performance of Measure While Drilling (MWD) microchip tracer to withstand the harsh downhole environment is one of the key issues of normal working. Therefore, it is an effective way to analyze pressure resistant performance of the tracer in the design phase. Compressive strength of the tracer was studied based on finite element method. Considering downhole complexity and working conditions during the processing of tracer roundness, material non-uniformity and other factors. In this study, researchers took sub-proportion failure criterion to determine the failure of tracer. Simulation results of two structures, with pin and without pin, show that both structures met the requirement of downhole compressive strength, and the structure with pin was better than the structure without pin. This study provides basis for downhole application of microchip tracers.

Wideband modeling and transient analysis of sub-module in modular multilevel converter

2017 ◽  
Vol 36 (6) ◽  
pp. 1792-1805 ◽  
Author(s):  
Lei Qi ◽  
Zhiyuan Shen ◽  
Jianjian Gao ◽  
Guoliang Zhao ◽  
Xiang Cui ◽  
...  
Keyword(s):  
Dynamic Testing ◽  
Extraction Procedure ◽  
Model Parameters ◽  
Modular Multilevel Converter ◽  
Multilevel Converter ◽  
Content Type ◽  
Insulated Gate Bipolar Transistor ◽  
Module Design ◽  
Turn On ◽  
Module Test

Purpose This paper aims to establish the wideband model of a sub-module in a modular multilevel converter (MMC) and analyze the switch transients of the sub-module. Design/methodology/approach The paper builds an MMC sub-module test circuit and conducts dynamic tests both with and without the bypass thyristor. Then, it builds the wideband model of the MMC sub-module and extracts the model parameters. Finally, based on the wideband model, it simulates the switch transients and analyzes the oscillation mechanism. Findings The dynamic testing shows the bypass thyristor will add oscillations during switch transients, especially during the turn-on process. The thyristor acts like a small capacitor and reduces the total capacitor in the turn-on circuit loop, thus causing under-damped oscillations. Originality/value This paper found that the bypass thyristor will influence the MMC sub-module switch transients under certain circumstances. This paper proposes a partial inductance extraction procedure for the MMC sub-module and builds a wideband model of the sub-module. The wideband model is used to analyze and explain the switch transients, and can be further used for insulated gate bipolar transistor switch oscillation inhibition and sub-module design optimization.

scholarly journals Prefabricated Urban Underground Utility Tunnels: A Case Study on Mechanical Behaviour with Strain Monitoring and Numerical Simulation

2021 ◽  
Vol 2021 ◽  
pp. 1-14
Author(s):  
Yonggang Xiao ◽  
Jubing Zhang ◽  
Jie Cao ◽  
Changhong Li
Keyword(s):  
Numerical Simulation ◽  
Working Conditions ◽  
Failure Modes ◽  
Mechanical Performance ◽  
Low Cost ◽  
Side Wall ◽  
Operating Conditions ◽  
Land Occupation ◽  
Depth Analysis ◽  
Simulation Results

The prefabricated urban utility tunnels (UUTs) have many advantages such as short construction period, low cost, high quality, and small land occupation. However, there is still a lack of in-depth analysis of the mechanical performance of the prefabricated urban utility tunnel (UUT) structure with bolted connections under different working conditions. In this paper, the force performance of a prefabricated UUT in Tongzhou District, Beijing, was studied under different working conditions using two methods: field monitoring and numerical simulation. The multichannel strain monitor was used for monitoring, and the internal wall concrete and bolt strain change data under the two conditions of installation and backfill were obtained. Combined with the construction process of the UUTs, a three-dimensional numerical model was established by COMSOL, where the build-in bolt assembly was used to simulate the longitudinal connection of the tunnel. The simulation results were compared with the measured data to verify the rationality of the computational model. The simulation results showed that the concrete and bolts on the inner wall of the tunnel work well under the two conditions of installation and backfilling; The deformation of the top plate of the prefabricated tunnel was approximately parabolic, with the largest vertical displacement (0.37 mm) in the middle and the most sensitive to the vertical load in the central part of the roof. The central portion of the side wall had the largest displacement (0.17 mm) in the inner concave. The tensile stress of bolt 3 increased the most (30.75 MPa) but was still much smaller than the yield strength of the bolt. The concrete and bolts of the UUT were found to work well through force analysis under operating conditions. In conclusion, analysis of structural forces and deformation failure modes will help design engineers understand the basic mechanisms and select the appropriate UUT structure.

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