scholarly journals A 1 GS/s 12-Bit Pipelined/SAR Hybrid ADC in 40 nm CMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 375
Author(s):  
Jianwen Li ◽  
Xuan Guo ◽  
Jian Luan ◽  
Danyu Wu ◽  
Lei Zhou ◽  
...  
Keyword(s):  
Successive Approximation ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Wide Band ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Least Significant Bit ◽  
Analog To Digital ◽  
Successive Approximation Register ◽  
Adaptive Power

A 1 GS/s 12-bit pipelined/successive-approximation-register (pipelined/SAR) hybrid analog-to-digital converter (ADC) is presented in this paper, where the five most significant bits are resolved by two cascading 2.5-bit multiplying digital-to-analog converters, and the eight least significant bits are determined by a two-channel time-interleaved successive-approximation-register (TI-SAR) quantizer. An integrated input buffer and an operational amplifier with improved voltage efficiency at 1.8 V are adopted to achieve high-linearity stably in wide band for 1 GS/s. By designing a 500 MS/s 8-bit SAR quantizer at 1 V, the number of required interleaved channels is minimized to simplify the complexity and an adaptive power/ground is used to compensate the common-mode mismatch between the blocks in different power supply voltages. The offset and gain mismatches due to the TI-SAR quantizer are compensated by a calibration scheme based on virtually-interleaved channels. This ADC is fabricated in a 40 nm complementary metal-oxide-semiconductor (CMOS) technology, and it achieves a signal-to-noise-and-distortion ratio (SNDR) of 58.2 dB and a spurious free dynamic range (SFDR) of 72 dB with a 69 MHz input tone. When the input frequency increases to 1814 MHz in the fourth Nyquist zone, it can maintain an SNDR of 55.3 dB and an SFDR of 64 dB. The differential and integral nonlinearities are −0.94/+0.85 least significant bit (LSB) and −3.4/+3.9 LSB, respectively. The core ADC consumes 94 mW, occupies an active area of 0.47 mm × 0.25 mm. The Walden figure of merit reaches 0.14 pJ/step with a Nyquist input.

scholarly journals A Digital-to-Time Converter for Time-Mode Successive-Approximation Register Analog-to-Digital Converters

2021 ◽  
Author(s):  
Daniel Junehee Lee
Keyword(s):  
Power Consumption ◽  
Successive Approximation ◽  
Cmos Technology ◽  
Sar Adc ◽  
Least Significant Bit ◽  
Silicon Area ◽  
Analog To Digital ◽  
Power Efficient ◽  
Successive Approximation Register ◽  
Simulation Results

file:///C:/Users/MWF/Downloads/Lee, Daniel Junehee.The 8-bit digital-to-time converter (DTC) to be used for a time-mode successive-approximation register analog-to-digital converter (SAR ADC) with a minimum power consumption and silicon area is presented. The architecture and the drawbacks of a conventional voltage-mode SAR ADC are discussed. The principle of time-mode circuits and benefits of their applications to mixed-signal circuits are explained. The architecture of a time-mode SAR ADC is presented. The need for an area and power-efficient DTC to be used for a time-mode SAR ADC is discussed. The principle of a DTC is explained and prior works on a DTC are reviewed. The principle of a phase interpolator (PI), to be used for a DTC, is explained and prior works on digital PIs are reviewed. The design of the proposed DTC is presented. Each block of the proposed DTC is explained using schematic and layout views. Optimal slope of the input of the PI and the condition for linear phase interpolation are investigated. Simulation results of the proposed DTC designed in TSMC 65 nm 1.0 V CMOS technology are provided. According to simulation results with BSIM4.4 device models only, the time resolution of 0.33 ps, a maximum operation frequency of 2.53 G Hz, the power consumption of 1.38 mW, and peak differential nonlinearity (DNL) and integral nonlinearity (INL) less than 0.14 least significant bit (LSB) and 0.49 LSB, respectively, for a nominal process (TT) and a temperature condition (27 C°) are achieved.

scholarly journals A Digital-to-Time Converter for Time-Mode Successive-Approximation Register Analog-to-Digital Converters

2021 ◽  
Author(s):  
Daniel Junehee Lee
Keyword(s):  
Power Consumption ◽  
Successive Approximation ◽  
Cmos Technology ◽  
Sar Adc ◽  
Least Significant Bit ◽  
Silicon Area ◽  
Analog To Digital ◽  
Power Efficient ◽  
Successive Approximation Register ◽  
Simulation Results

file:///C:/Users/MWF/Downloads/Lee, Daniel Junehee.The 8-bit digital-to-time converter (DTC) to be used for a time-mode successive-approximation register analog-to-digital converter (SAR ADC) with a minimum power consumption and silicon area is presented. The architecture and the drawbacks of a conventional voltage-mode SAR ADC are discussed. The principle of time-mode circuits and benefits of their applications to mixed-signal circuits are explained. The architecture of a time-mode SAR ADC is presented. The need for an area and power-efficient DTC to be used for a time-mode SAR ADC is discussed. The principle of a DTC is explained and prior works on a DTC are reviewed. The principle of a phase interpolator (PI), to be used for a DTC, is explained and prior works on digital PIs are reviewed. The design of the proposed DTC is presented. Each block of the proposed DTC is explained using schematic and layout views. Optimal slope of the input of the PI and the condition for linear phase interpolation are investigated. Simulation results of the proposed DTC designed in TSMC 65 nm 1.0 V CMOS technology are provided. According to simulation results with BSIM4.4 device models only, the time resolution of 0.33 ps, a maximum operation frequency of 2.53 G Hz, the power consumption of 1.38 mW, and peak differential nonlinearity (DNL) and integral nonlinearity (INL) less than 0.14 least significant bit (LSB) and 0.49 LSB, respectively, for a nominal process (TT) and a temperature condition (27 C°) are achieved.

scholarly journals A 4-bit 36 GS/s ADC with 18 GHz Analog Bandwidth in 40 nm CMOS Process

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1733
Author(s):  
Hanbo Jia ◽  
Xuan Guo ◽  
Xuqiang Zheng ◽  
Xiaodi Xu ◽  
Danyu Wu ◽  
...  
Keyword(s):  
High Speed ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Nyquist Frequency ◽  
Least Significant Bit ◽  
Analog To Digital ◽  
Differential Nonlinearity

This paper presents a 4-bit 36 GS/s analog-to-digital converter (ADC) employing eight time-interleaved (TI) flash sub-ADCs in 40 nm complementary metal-oxide-semiconductor (CMOS) process. A wideband front-end matching circuit based on a peaking inductor is designed to increase the analog input bandwidth to 18 GHz. A novel offset calibration that can achieve quick detection and accurate correction without affecting the speed of the comparator is proposed, guaranteeing the high-speed operation of the ADC. A clock distribution circuit based on CMOS and current mode logic (CML) is implemented in the proposed ADC, which not only maintains the speed and quality of the high-speed clock, but also reduces the overall power consumption. A timing mismatch calibration is integrated into the chip to achieve fast timing mismatch detection of the input signal which is bandlimited to the Nyquist frequency for the complete ADC system. The experimental results show that the differential nonlinearity (DNL) and integral nonlinearity (INL) are −0.28/+0.22 least significant bit (LSB) and −0.19/+0.16 LSB, respectively. The signal-to-noise-and-distortion ratio (SNDR) is above 22.5 dB and the spurious free dynamic range (SFDR) is better than 35 dB at 1.2 GHz. An SFDR above 24.5 dB and an SNDR above 18.6 dB across the entire Nyquist frequency can be achieved. With a die size of 2.96 mm * 1.8 mm, the ADC consumes 780 mW from the 0.9/1.2/1.8 V power supply.

scholarly journals A 2.6 GS/s 8-Bit Time-Interleaved SAR ADC in 55 nm CMOS Technology

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 305 ◽  
Author(s):  
Dong Wang ◽  
Xiaoge Zhu ◽  
Xuan Guo ◽  
Jian Luan ◽  
Lei Zhou ◽  
...  
Keyword(s):  
High Speed ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Sar Adc ◽  
Oxide Semiconductor ◽  
Power Measurement ◽  
Cmos Process ◽  
Analog To Digital ◽  
Full Speed ◽  
Time Interleaved

This paper presents an eight-channel time-interleaved (TI) 2.6 GS/s 8-bit successive approximation register (SAR) analog-to-digital converter (ADC) prototype in a 55-nm complementary metal-oxide-semiconductor (CMOS) process. The channel-selection-embedded bootstrap switch is adopted to perform sampling times synchronization using the full-speed master clock to suppress the time skew between channels. Based on the segmented pre-quantization and bypass switching scheme, double alternate comparators clocked asynchronously with background offset calibration are utilized in sub-channel SAR ADC to achieve high speed and low power. Measurement results show that the signal-to-noise-and-distortion ratio (SNDR) of the ADC is above 38.2 dB up to 500 MHz input frequency and above 31.8 dB across the entire first Nyquist zone. The differential non-linearity (DNL) and integral non-linearity (INL) are +0.93/−0.85 LSB and +0.71/−0.91 LSB, respectively. The ADC consumes 60 mW from a 1.2 V supply, occupies an area of 400 μm × 550 μm, and exhibits a figure-of-merit (FoM) of 348 fJ/conversion-step.

scholarly journals Design and Implementation of High Performance and Low Power Mixed Logic Line Decoders

2019 ◽  
Vol 8 (6S4) ◽  
pp. 635-640
Keyword(s):  
High Performance ◽  
Data Transfer ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Oxide Semiconductor ◽  
Analog To Digital ◽  
Delay Performance ◽  
And Performance ◽  
Almost All

The decoders are widely used in the logical circuits, data transfer circuits and analog to digital conversions. A mixed logic design methods for the line decoders are used to combining the transmission gate logic, pass transistor logic, and complementary metal-oxide semiconductor (CMOS) technology provides desired operation and performance. A novel topology is presented for the 2 to 4 decoder requires a fourteen transistor topology aiming on reducing the transistor count and operating power and a fifteen transistor topology aiming on high power and low delay performance. The standard and inverting decoders are designed in each of the case, gives a total of four new designs circuits. All the proposed decoders have compact transistor count compared to their conservative CMOS technologies. Finally, a variety of proposed designs present a noteworthy improvement in operating power and propagation delay, outperforming CMOS in almost all the cases.

Design of Low Power and High Precision Successive Approximation Register Analog-to-Digital Converter (SAR-ADC) Based on Piecewise Capacitance and Calibration Technique

2020 ◽  
Vol 15 (4) ◽  
pp. 478-486
Author(s):  
Sheng-Biao An ◽  
Li-Xin Zhao ◽  
Shi-Cong Yang ◽  
Tao An ◽  
Rui-Xia Yang
Keyword(s):  
Power Consumption ◽  
Successive Approximation ◽  
Dynamic Range ◽  
Sar Adc ◽  
Total Power ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Analog To Digital ◽  
Successive Approximation Register ◽  
Total Power Consumption

This paper presents a charge redistributed successive approximation register analog-to-digital converter (SAR ADC). Compared with the traditional Digital-Analog Convertor (DAC), the power consumption of the DAC scheme is reduced by 90%, the area is reduced by 60%. The test chip fabricated in 180 nm Complementary Metal Oxide Semiconductor (CMOS) occupied an active area of 0.12 mm 2 . At 10 MS/s, a signal-to-noise and distortion ratio (SNDR) of 57.70 dB and a spurious-free dynamic range (SFDR) of 55.63 dB are measured with 1.68 Vpp differential-mode input signal. The total power consumption is 690 μW corresponding to 67 fJ/conversion step figure of merit.

Design of Fully Integrated Impedimetric CMOS Biosensor for DNA Detection

2014 ◽  
Vol 925 ◽  
pp. 524-528
Author(s):  
Vinny Lam Siu Fan ◽  
Yusmeeraz Binti Yusof
Keyword(s):  
Dynamic Range ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Impedance Change ◽  
Readout Circuit ◽  
Label Free ◽  
Fully Integrated

This paper described a label-free and fully integrated impedimetric biosensor using standard Complementary Metal Oxide Semiconductor (CMOS) technology to measure both capacitance and resistance of the electrode-electrolyte interface. Conventional impedance biosensors usually use bulky and expensive instruments to monitor the impedance change. This paper demonstrates a low power, high gain and low cost impedance readout circuit design for detecting the biomolecular interactions of deoxyribonucleic acid (DNA) strands at the electrode surface. The proposed biosensor circuit is composed of a transimpedance amplifier (TIA) with two quadrature phase mixers and finally integrated with 5μm x 5μm microelectrode based on 0.18μm Silterra CMOS technology process with 1.8V supply. The output value of the readout circuit is used to estimate the amplitude and phase of the measured admittance. The developed TIA can achieve a gain of 88.6dB up to a frequency of 50MHz. It also has very good linearity up to 2.7mA and the overall dynamic range is approximately 90dB.

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