scholarly journals A 4-bit 36 GS/s ADC with 18 GHz Analog Bandwidth in 40 nm CMOS Process

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1733
Author(s):  
Hanbo Jia ◽  
Xuan Guo ◽  
Xuqiang Zheng ◽  
Xiaodi Xu ◽  
Danyu Wu ◽  
...  
Keyword(s):  
High Speed ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Nyquist Frequency ◽  
Least Significant Bit ◽  
Analog To Digital ◽  
Differential Nonlinearity

This paper presents a 4-bit 36 GS/s analog-to-digital converter (ADC) employing eight time-interleaved (TI) flash sub-ADCs in 40 nm complementary metal-oxide-semiconductor (CMOS) process. A wideband front-end matching circuit based on a peaking inductor is designed to increase the analog input bandwidth to 18 GHz. A novel offset calibration that can achieve quick detection and accurate correction without affecting the speed of the comparator is proposed, guaranteeing the high-speed operation of the ADC. A clock distribution circuit based on CMOS and current mode logic (CML) is implemented in the proposed ADC, which not only maintains the speed and quality of the high-speed clock, but also reduces the overall power consumption. A timing mismatch calibration is integrated into the chip to achieve fast timing mismatch detection of the input signal which is bandlimited to the Nyquist frequency for the complete ADC system. The experimental results show that the differential nonlinearity (DNL) and integral nonlinearity (INL) are −0.28/+0.22 least significant bit (LSB) and −0.19/+0.16 LSB, respectively. The signal-to-noise-and-distortion ratio (SNDR) is above 22.5 dB and the spurious free dynamic range (SFDR) is better than 35 dB at 1.2 GHz. An SFDR above 24.5 dB and an SNDR above 18.6 dB across the entire Nyquist frequency can be achieved. With a die size of 2.96 mm * 1.8 mm, the ADC consumes 780 mW from the 0.9/1.2/1.8 V power supply.

scholarly journals Performance Comparison of Carry-Lookahead and Carry-Select Adders Based on Accurate and Approximate Additions

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 369 ◽  
Author(s):  
Padmanabhan Balasubramanian ◽  
Nikos Mastorakis
Keyword(s):  
High Speed ◽  
Digital Signal ◽  
Complementary Metal Oxide Semiconductor ◽  
Performance Comparison ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Least Significant Bit ◽  
Design Metrics ◽  
Ripple Carry Adder ◽  
Speed Performance

Addition is a fundamental operation in microprocessing and digital signal processing hardware, which is physically realized using an adder. The carry-lookahead adder (CLA) and the carry-select adder (CSLA) are two popular high-speed, low-power adder architectures. The speed performance of a CLA architecture can be improved by adopting a hybrid CLA architecture which employs a small-size ripple-carry adder (RCA) to replace a sub-CLA in the least significant bit positions. On the other hand, the power dissipation of a CSLA employing full adders and 2:1 multiplexers can be reduced by utilizing binary-to-excess-1 code (BEC) converters. In the literature, the designs of many CLAs and CSLAs were described separately. It would be useful to have a direct comparison of their performances based on the design metrics. Hence, we implemented homogeneous and hybrid CLAs, and CSLAs with and without the BEC converters by considering 32-bit accurate and approximate additions to facilitate a comparison. For the gate-level implementations, we considered a 32/28 nm complementary metal-oxide-semiconductor (CMOS) process targeting a typical-case process–voltage–temperature (PVT) specification. The results show that the hybrid CLA/RCA architecture is preferable among the CLA and CSLA architectures from the speed and power perspectives to perform accurate and approximate additions.

scholarly journals A 2.6 GS/s 8-Bit Time-Interleaved SAR ADC in 55 nm CMOS Technology

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 305 ◽  
Author(s):  
Dong Wang ◽  
Xiaoge Zhu ◽  
Xuan Guo ◽  
Jian Luan ◽  
Lei Zhou ◽  
...  
Keyword(s):  
High Speed ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Sar Adc ◽  
Oxide Semiconductor ◽  
Power Measurement ◽  
Cmos Process ◽  
Analog To Digital ◽  
Full Speed ◽  
Time Interleaved

This paper presents an eight-channel time-interleaved (TI) 2.6 GS/s 8-bit successive approximation register (SAR) analog-to-digital converter (ADC) prototype in a 55-nm complementary metal-oxide-semiconductor (CMOS) process. The channel-selection-embedded bootstrap switch is adopted to perform sampling times synchronization using the full-speed master clock to suppress the time skew between channels. Based on the segmented pre-quantization and bypass switching scheme, double alternate comparators clocked asynchronously with background offset calibration are utilized in sub-channel SAR ADC to achieve high speed and low power. Measurement results show that the signal-to-noise-and-distortion ratio (SNDR) of the ADC is above 38.2 dB up to 500 MHz input frequency and above 31.8 dB across the entire first Nyquist zone. The differential non-linearity (DNL) and integral non-linearity (INL) are +0.93/−0.85 LSB and +0.71/−0.91 LSB, respectively. The ADC consumes 60 mW from a 1.2 V supply, occupies an area of 400 μm × 550 μm, and exhibits a figure-of-merit (FoM) of 348 fJ/conversion-step.

scholarly journals A 1 GS/s 12-Bit Pipelined/SAR Hybrid ADC in 40 nm CMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 375
Author(s):  
Jianwen Li ◽  
Xuan Guo ◽  
Jian Luan ◽  
Danyu Wu ◽  
Lei Zhou ◽  
...  
Keyword(s):  
Successive Approximation ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Wide Band ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Least Significant Bit ◽  
Analog To Digital ◽  
Successive Approximation Register ◽  
Adaptive Power

A 1 GS/s 12-bit pipelined/successive-approximation-register (pipelined/SAR) hybrid analog-to-digital converter (ADC) is presented in this paper, where the five most significant bits are resolved by two cascading 2.5-bit multiplying digital-to-analog converters, and the eight least significant bits are determined by a two-channel time-interleaved successive-approximation-register (TI-SAR) quantizer. An integrated input buffer and an operational amplifier with improved voltage efficiency at 1.8 V are adopted to achieve high-linearity stably in wide band for 1 GS/s. By designing a 500 MS/s 8-bit SAR quantizer at 1 V, the number of required interleaved channels is minimized to simplify the complexity and an adaptive power/ground is used to compensate the common-mode mismatch between the blocks in different power supply voltages. The offset and gain mismatches due to the TI-SAR quantizer are compensated by a calibration scheme based on virtually-interleaved channels. This ADC is fabricated in a 40 nm complementary metal-oxide-semiconductor (CMOS) technology, and it achieves a signal-to-noise-and-distortion ratio (SNDR) of 58.2 dB and a spurious free dynamic range (SFDR) of 72 dB with a 69 MHz input tone. When the input frequency increases to 1814 MHz in the fourth Nyquist zone, it can maintain an SNDR of 55.3 dB and an SFDR of 64 dB. The differential and integral nonlinearities are −0.94/+0.85 least significant bit (LSB) and −3.4/+3.9 LSB, respectively. The core ADC consumes 94 mW, occupies an active area of 0.47 mm × 0.25 mm. The Walden figure of merit reaches 0.14 pJ/step with a Nyquist input.

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

scholarly journals Toward High Throughput Core-CBCM CMOS Capacitive Sensors for Life Science Applications: A Novel Current-Mode for High Dynamic Range Circuitry

Sensors ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 3370 ◽  
Author(s):  
Saghi Forouhi ◽  
Rasoul Dehghani ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
High Performance ◽  
Life Science ◽  
Dynamic Range ◽  
Current Mode ◽  
Capacitive Sensor ◽  
Oxide Semiconductor ◽  
Capacitance Measurement ◽  
Biological Research ◽  
Cmos Process ◽  
Capacitive Sensors

This paper proposes a novel charge-based Complementary Metal Oxide Semiconductor (CMOS) capacitive sensor for life science applications. Charge-based capacitance measurement (CBCM) has significantly attracted the attention of researchers for the design and implementation of high-precision CMOS capacitive biosensors. A conventional core-CBCM capacitive sensor consists of a capacitance-to-voltage converter (CVC), followed by a voltage-to-digital converter. In spite of their high accuracy and low complexity, their input dynamic range (IDR) limits the advantages of core-CBCM capacitive sensors for most biological applications, including cellular monitoring. In this paper, after a brief review of core-CBCM capacitive sensors, we address this challenge by proposing a new current-mode core-CBCM design. In this design, we combine CBCM and current-controlled oscillator (CCO) structures to improve the IDR of the capacitive readout circuit. Using a 0.18 μm CMOS process, we demonstrate and discuss the Cadence simulation results to demonstrate the high performance of the proposed circuitry. Based on these results, the proposed circuit offers an IDR ranging from 873 aF to 70 fF with a resolution of about 10 aF. This CMOS capacitive sensor with such a wide IDR can be employed for monitoring cellular and molecular activities that are suitable for biological research and clinical purposes.

scholarly journals A 3GSps 12-bit Four-Channel Time-Interleaved Pipelined ADC in 40 nm CMOS Process

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1551 ◽  
Author(s):  
Jianwen Li ◽  
Xuan Guo ◽  
Jian Luan ◽  
Danyu Wu ◽  
Lei Zhou ◽  
...  
Keyword(s):  
Dynamic Range ◽  
Cmos Process ◽  
Pipelined Adc ◽  
Least Significant Bit ◽  
Analog To Digital ◽  
Capacitor Mismatch ◽  
Gain Error ◽  
Spurious Free Dynamic Range ◽  
Time Interleaved ◽  
Free Dynamic

This paper presents a four-channel time-interleaved 3GSps 12-bit pipelined analog-to-digital converter (ADC). The combination of master clock sampling and delay-adjusting is adopted to remove the time skew due to channel mismatches. An early comparison scheme is used to minimize the non-overlapping time, where a custom-designed latch is developed to replace the typical non-overlapping clock generator. By using the dither capacitor to generate an equivalent direct current input, a zero-input-based calibration is developed to correct the capacitor mismatch and inter-stage gain error. Fabricated in a 40 nm CMOS process, the ADC achieves a signal-to-noise-and-distortion ratio (SNDR) of 57.8 dB and a spurious free dynamic range (SFDR) of 72 dB with a 23 MHz input tone. It can achieve an SNDR above 52.3 dB and an SFDR above 61.5 dB across the entire first Nyquist zone. The differential and integral nonlinearities are −0.93/+0.73 least significant bit (LSB) and −2.8/+4.3 LSB, respectively. The ADC consumes 450 mW powered at 1.8V, occupies an active area of 3 mm × 1.3 mm. The calculated Walden figure of merit reaches 0.44 pJ/step.

scholarly journals A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 253
Author(s):  
Dong Wang ◽  
Jian Luan ◽  
Xuan Guo ◽  
Lei Zhou ◽  
Danyu Wu ◽  
...  
Keyword(s):  
Dynamic Range ◽  
Dynamic Performance ◽  
Open Loop ◽  
Total Power ◽  
Least Significant Bit ◽  
Analog To Digital ◽  
Self Calibration ◽  
Differential Nonlinearity ◽  
Bicmos Technology ◽  
Sige Bicmos

A 5 GS/s 8-bit analog-to-digital converter (ADC) implemented in 0.18 μm SiGe BiCMOS technology has been demonstrated. The proposed ADC is based on two-channel time-interleaved architecture, and each sub-ADC employs a two-stage cascaded folding and interpolating topology of radix-4. An open loop track-and-hold amplifier with enhanced linearity is designed to meet the dynamic performance requirement. The on-chip self-calibration technique is introduced to compensate the interleaving mismatches between two sub-ADCs. Measurement results show that the spurious free dynamic range (SFDR) stays above 44.8 dB with a peak of 53.52 dB, and the effective number of bits (ENOB) is greater than 5.8 bit with a maximum of 6.97 bit up to 2.5 GS/s. The ADC exhibits a differential nonlinearity (DNL) of -0.31/+0.23 LSB (least significant bit) and an integral nonlinearity (INL) of -0.68/+0.68 LSB, respectively. The chip occupies an area of 3.9 × 3.6 mm2, consumes a total power of 2.8 W, and achieves a figure of merit (FoM) of 10 pJ/conversion step.

High-Performance Current-Mode Logic Ternary D Flip-Flop Based on Bipolar Complementary Metal Oxide Semiconductor

2021 ◽  
Vol 16 (4) ◽  
pp. 528-533
Author(s):  
Xianghong Zhao ◽  
Longhua Ma ◽  
Hongye Su ◽  
Jieyu Zhao ◽  
Weiming Cai
Keyword(s):  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Oxide Semiconductor ◽  
Logic Function ◽  
Flip Flop ◽  
Current Mode Logic ◽  
Transmission Speed

In this paper, a simple-structured and high-performance current-mode logic (CML) ternary D flip-flop based on BiCMOS is proposed. It combines both advantages of BiCMOS and CML circuits, which is with much more high-speed, strong-drive and anti-interference abilities. Utilizing TSMC 180 nm process, results of simulations carried out by HSPICE illustrate the proposed circuit not only has correct logic function, but also gains improvements of 95.6~98.4% in average D-Q delay and 16.2%~70.4 in PDP compared with advanced ternary D flip-flop. When compared at the same information transmission speed, proposed circuit is more competitive. Furthermore, it can perform up to high frequency of 15 GHz and drive heavier load. All the results prove that proposed circuit is high-performance and very suitable for high-speed and high-frequency applications.

AN OPTIMIZED LOW POWER PIPELINE ANALOG-TO-DIGITAL CONVERTER FOR HIGH-SPEED WLAN APPLICATION

2014 ◽  
Vol 23 (05) ◽  
pp. 1450059 ◽  
Author(s):  
MAO YE ◽  
BIN WU ◽  
YONGXU ZHU ◽  
YUMEI ZHOU
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
Dynamic Range ◽  
Cmos Process ◽  
Area Network ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Silicon Area ◽  
Analog To Digital

This paper presents the design and implementation of a 11-bit 160 MSPS analog-to-digital converter (ADC) for next generation super high-speed wireless local area network (WLAN) application. The ADC core consists of one front sample and hold stage and four cascades of 2.5 bit pipeline stages with opamp sharing between successive stages. To achieve low power dissipation at 1.2 V supply, a single stage symmetrical amplifier with double transimpedance gain-boosting amplifier is proposed. High speed on-chip reference buffer with replica source follower is also included for linearity performance. The ADC was fabricated in a standard 130-nm CMOS process and an occupied silicon area of 0.95 mm × 1.15 mm. Performance of 73 dB spurious-free-dynamic-range is measured at 160 MS/s with 1 Vpp input signal. The power dissipation of the analog core chip is only 50 mW from a 1.2 V supply.

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