scholarly journals Demonstration of a SiC Protective Coating for Titanium Implants

Materials ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3321 ◽  
Author(s):  
Chaker Fares ◽  
Shu-Min Hsu ◽  
Minghan Xian ◽  
Xinyi Xia ◽  
Fan Ren ◽  
...  
Keyword(s):  
Energy Dispersive Spectroscopy ◽  
Chemical Vapor ◽  
Titanium Implant ◽  
Titanium Implants ◽  
Energy Dispersive ◽  
Atomic Concentration ◽  
Interface Quality ◽  
Implant Placement ◽  
Silicon Carbon ◽  
Chemical Vapor Deposited

To mitigate the corrosion of titanium implants and improve implant longevity, we investigated the capability to coat titanium implants with SiC and determined if the coating could remain intact after simulated implant placement. Titanium disks and titanium implants were coated with SiC using plasma-enhanced chemical vapor deposition (PECVD) and were examined for interface quality, chemical composition, and coating robustness. SiC-coated titanium implants were torqued into a Poly(methyl methacrylate) (PMMA) block to simulate clinical implant placement followed by energy dispersive spectroscopy to determine if the coating remained intact. After torquing, the atomic concentration of the detectable elements (silicon, carbon, oxygen, titanium, and aluminum) remained relatively unchanged, with the variation staying within the detection limits of the Energy Dispersive Spectroscopy (EDS) tool. In conclusion, plasma-enhanced chemical vapor deposited SiC was shown to conformably coat titanium implant surfaces and remain intact after torquing the coated implants into a material with a similar hardness to human bone mass.

Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

2011 ◽  
Vol 383-390 ◽  
pp. 7619-7623
Author(s):  
Z Z Lu ◽  
F. Yu ◽  
L. Yu ◽  
L. H. Cheng ◽  
P. Han
Keyword(s):  
Energy Dispersive Spectroscopy ◽  
Chemical Vapor ◽  
Energy Dispersive ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Composition Distribution ◽  
X Ray ◽  
Cvd Method ◽  
Substrate Structure

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

Can keratinocytes cause failure of osseointegration?

2008 ◽  
Vol 123 (9) ◽  
pp. 1035-1038 ◽  
Author(s):  
S Khwaja ◽  
A Curry ◽  
I H Chaudhry ◽  
K M J Green
Keyword(s):  
Hearing Aids ◽  
Titanium Implant ◽  
Titanium Implants ◽  
Histopathological Analysis ◽  
Keratinocyte Proliferation ◽  
Mixed Hearing Loss ◽  
Implant Placement ◽  
Transmission Electron ◽  
Living Bone ◽  
Implanted Devices

AbstractAim:Bone-anchored hearing aids are well established, implanted devices. We present two patients who suffered mixed hearing loss and who underwent titanium implant placement in the temporal bone to enable attachment of bone-anchored hearing aids. Osseointegration is necessary for such implants to function. We report these two cases to highlight how such osseointegration may be disrupted.Method:Attached tissue from the explanted or removed titanium implants was examined by transmission electron microscopy and histopathological analysis.Results:Attached tissue from both implants showed the presence of keratinocytes at the titanium implant and living bone interface. This was confirmed by histopathological analysis. In one case, there was frank keratinocyte proliferation, which had led to osseointegration failure; in the other case, such proliferation was present but not so advanced.Conclusion:These findings suggest that, in the cases reported, keratinocytes implanted between the titanium and the living bone, leading to disruption of osseointegration.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

Pengaruh implantasi ion tin (Titanium Nitrida) terhadap sifat mekanis baja VCL 140

2010 ◽  
Vol 8 (1) ◽  
pp. 753
Author(s):  
Muhammad Muhammad
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Energy Dispersive Spectroscopy ◽  
Energy Dispersive ◽  
Scanning Electron

Implantasi ion dapat meningkatkan sifat mekanik seperti kekerasan bahan yang akan digunakan untuk komponen dan peralatan proses manufaktur. Implantasi ion dipengaruhi oleh jenis ion dopan, waktu dan energi yang digunakan. Penelitian ini dilakukan untuk mengetahui pengaruh energi dan waktu implantasi ion titanium nitrida terhadap kekerasan dan struktur mikro pada baja VCL 140. Implantasi dilakukan pada arus berkas tetap 10 yA. Variasi waktu 60, 70, 80, 90, 100, 110, 120 menit, energi 75 keV dan variasi energi 15, 30, 45, 60, 75, 90 dan 100 keV dengan waktu implantasi 100 menit dilakukan untuk mendapatkan kekerasan optimum. Uji Kekerasan menggunakan metode Vickers dengan beban 10 gram dan waktu 10 detik. Topografi dari lapisan TIN diamati menggunakan scanning electron microscopy (SEM) dan komposisi kimia dari lapisan TIN dianalisa menggunakan energy dispersive spectroscopy (EDS).Kata kunci : Implantasi ion, VCL 140, kekerasan

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