scholarly journals Hydrogen Transportation Behaviour of V–Ni Solid Solution: A First-Principles Investigation

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2603
Author(s):  
Jiayao Qin ◽  
Zhigao Liu ◽  
Wei Zhao ◽  
Dianhui Wang ◽  
Yanli Zhang ◽  
...  

Hydrogen embrittlement causes deterioration of materials used in metal–hydrogen systems. Alloying is a good option for overcoming this issue. In the present work, first-principles calculations were performed to systematically study the effects of adding Ni on the stability, dissolution, trapping, and diffusion behaviour of interstitial/vacancy H atoms of pure V. The results of lattice dynamics and solution energy analyses showed that the V–Ni solid solutions are dynamically and thermodynamically stable, and adding Ni to pure V can reduce the structural stability of various VHx phases and enhance their resistance to H embrittlement. H atoms preferentially occupy the characteristic tetrahedral interstitial site (TIS) and the octahedral interstitial site (OIS), which are composed by different metal atoms, and rapidly diffuse along both the energetically favourable TIS → TIS and OIS → OIS paths. The trapping energy of monovacancy H atoms revealed that Ni addition could help minimise the H trapping ability of the vacancies and suppress the retention of H in V. Monovacancy defects block the diffusion of H atoms more than the interstitials, as determined from the calculated H-diffusion barrier energy data, whereas Ni doping contributes negligibly toward improving the H-diffusion coefficient.

2021 ◽  
Author(s):  
Jiayao Qin ◽  
Zhigao Liu ◽  
Wei Zhao ◽  
Dianhui Wang ◽  
Yanli Zhang ◽  
...  

Abstract Hydrogen embrittlement causes deterioration of materials used in hydrogen energy systems. Alloying is an effective means for overcoming this issue. In this study, the first-principles calculation method was used to investigate the effects of alloying Ni on the stability, dissolution, trapping, and diffusion behaviour of interstitial/vacancy H atoms in V. The calculated phonon spectra and solution energies of the vacancy/interstitial H atoms revealed that the V–Ni phase was dynamically and thermodynamically stable, and Ni addition could reduce the stability of V hydrides and improve their resistance to H embrittlement. H atoms in the interstitials and vacancies preferentially occupied the tetrahedral interstitial site (TIS) and octahedral interstitial site (OIS) with the lowest solution energies and diffused along the TIS → TIS and OIS → OIS paths with the minimum diffusion barrier energies. The trapping energy of the vacancy H atoms indicated that the addition of Ni could reduce the H trapping capability of the vacancies and suppress the retention of H in V. Detailed analysis of the calculated H diffusion barriers indicated that the presence of monovacancy defects blocked the diffusion of H atoms more than the presence of interstitials, and Ni doping did not enhance the H diffusion coefficient.


2018 ◽  
Vol 8 (12) ◽  
pp. 2466 ◽  
Author(s):  
Yang Wu ◽  
Zhongmin Wang ◽  
Dianhui Wang ◽  
Jiayao Qin ◽  
Zhenzhen Wan ◽  
...  

To investigate Mo doping effects on the hydrogen permeation performance of Nb membranes, we study the most likely process of atomic hydrogen adsorption and diffusion on/into Mo-doped Nb (100) surface/subsurface (in the Nb12Mo4 case) via first-principles calculations. Our results reveal that the (100) surface is the most stable Mo-doped Nb surface with the smallest surface energy (2.75 J/m2). Hollow sites (HSs) in the Mo-doped Nb (100) surface are H-adsorption-favorable mainly due to their large adsorption energy (−4.27 eV), and the H-diffusion path should preferentially be HS→TIS (tetrahedral interstitial site) over HS→OIS (octahedral interstitial site) because of the correspondingly lower H-diffusion energy barrier. With respect to a pure Nb (100) surface, the Mo-doped Nb (100) surface has a smaller energy barrier along the HS→TIS pathway (0.31 eV).


2014 ◽  
Vol 28 (29) ◽  
pp. 1450207 ◽  
Author(s):  
Juan Hua ◽  
Yue-Lin Liu ◽  
Heng-Shuai Li ◽  
Ming-Wen Zhao ◽  
Xiang-Dong Liu

With a first-principles method based on density functional theory, the effect of the alloying element titanium ( Ti ) on the thermodynamic stability and electronic structure of hydrogen ( H ) in pure vanadium ( V ) is investigated. The interactions between H and the vacancy and the defect solution energies in a dilute V – Ti binary alloy are calculated. The results show that: (i) a single H atom prefers to reside in a tetrahedral interstitial site in dilute V – Ti binary alloy systems; (ii) H atoms tend to bond at the vacancy sites; a mono-vacancy is shown to be capable of trapping three H atoms; and (iii) the presence of Ti in pure V can increase the H trapping energy and reduce the H trapping capability of the vacancy defects. This indicates that doping with Ti to form dilute V – Ti binary alloys can inhibit the solution for H , and thus suppress the retention of H . These results provide useful insight into V -based alloys as a candidate structural material in fusion reactors.


1993 ◽  
Vol 319 ◽  
Author(s):  
N. Kioussis ◽  
H. Watanabe ◽  
R.G. Hemker ◽  
W. Gourdin ◽  
A. Gonis ◽  
...  

AbstractUsing first-principles electronic structure calculations based on the Linear-Muffin-Tin Orbital (LMTO) method, we have investigated the effects of interstitial boron and hydrogen on the electronic structure of the L12 ordered intermetallic Ni3A1. When it occupies an octahedral interstitial site entirely coordinated by six Ni atoms, we find that boron enhances the charge distribution found in the strongly-bound “pure” Ni3AI crystal: Charge is depleted at Ni and Al sites and enhanced in interstitial region. Substitution of Al atoms for two of the Ni atoms coordinating the boron, however, reduces the interstitial charge density between certain atomic planes. In contrast to boron, hydrogen appears to deplete the interstitial charge, even when fully coordinated by Ni atoms. We suggest that these results are broadly consistent with the notion of boron as a cohesion enhancer and hydrogen as an embrittler.


1989 ◽  
Vol 163 ◽  
Author(s):  
T. Oguchi ◽  
T. Sasaki ◽  
H. Katayama-Yoshida

AbstractElectronic properties of ZnSe with a Li impurity are investigated with use of the local-density-functional approach. The electronic structures are calculated for different impurity sites by taking the neighboring lattice relaxation into account. By comparing their total energies, the stability of the Li impurity in ZnSe is discussed. It is proposed that the Li impurity at the substitutional Zn site might be unstable to the tetrahedral interstitial site with an ionization of Li and a vacancy at the Zn site.


2017 ◽  
Vol 31 (02) ◽  
pp. 1750002
Author(s):  
Zhong-Zhu Li ◽  
Ye Wei ◽  
Hong-Bo Zhou ◽  
Guang-Hong Lu

Employing a first-principles method in combination with the empirical criterions, we have investigated the site preference of boron (B) and its effect on the mechanical properties of the binary-phase TiAl–Ti3Al alloy. It is found that B energetically prefers to occupy the Ti-rich octahedral interstitial site, because B is more favorable to bond with Ti in comparison with Al. The occupancy tendency of B in the TiAl–Ti3Al alloy is the TiAl/Ti3Al interface [Formula: see text] Ti3Al [Formula: see text] TiAl, thus B tends to segregate into the binary-phase interface in the TiAl–Ti3Al alloy. The charge density difference shows that B at the TiAl–Ti3Al interface will form strong B–Ti bonds and weak B–Al bonds, leading to the significant increasing of the cleavage energy [Formula: see text] and the unstable stacking fault energy [Formula: see text]. This indicates that the presence of B will strengthen the TiAl/Ti3Al interface, but block its mobility. Further, the ratio of [Formula: see text]/[Formula: see text] of the B-doped system is 4.63%, 8.19% lower than that of the clean system. Based on the empirical criterions, B will have a negative effect on the ductility of the TiAl–Ti3Al alloy.


2008 ◽  
Vol 1125 ◽  
Author(s):  
Ken-ichi Ebihara ◽  
Masatake Yamaguchi ◽  
Hideo Kaburaki ◽  
Yutaka Nishiyama

ABSTRACTWe have evaluated phosphorus (P) segregation in ion-irradiated nickel (Ni) by the rate theory model incorporating the results of first principles calculations. We find from our first principles calculation that the transport of P via the rotation mode of a mixed-dumbbell is unlikely to occur, and the transport coefficient of phosphorus by the vacancy mechanism is much larger than that reported previously. On the basis of our first principles results, we have also proposed to include the effect of free migration of P via the octahedral interstitial site of FCC Ni crystal in the rate theory model. With all these renewed parameters, we have successfully obtained the P distribution in irradiated Ni, which is very close to experiment, by adjusting the effect of P transport by the vacancy mechanism.


2002 ◽  
Vol 753 ◽  
Author(s):  
Hiroaki Ishii ◽  
Seiji Miura ◽  
Tetsuo Mohri

ABSTRACTThe structure of E21 is a derivative of L12 structure with an interstitial carbon in the body center or the octahedral interstitial site. In the Fe-Al-C ternary system E21-Fe3AlC intermetallic is known to precipitate in γ-austenite alloys. For the high temperature application, the stability of microstructure is a key issue and the control of the lattice misfit is essential. By adding some elements to Fe-Al-C alloys, the lattice constant can be controlled, and enhancement of the stability of γ-austenite + E21-Fe3AlC two phase structure is expected. In this study, phase stability and lattice parameter of E21 phase in the (Fe-Mn)-(Al-M)-C system (M=Si, Ge) are investigated. In both systems, no significant changes in microstructures were observed within the composition range of concern. The lattice constant of E21-Fe3AlC phase, however, does not show decrease with the addition of Si or Ge. This result is different from what was expected. By WDS analysis, it was revealed that Si tends to distribute mainly in γ phase, and Ge concentrates in E21-Fe3AlC phase. It was found that the lattice constants of E21 phases are very close to those of L12 structure estimated from the atomic radii of constituent elements which are evaluated from those in binary alloys and compounds. The distribution behavior of Si and Ge can be related to tolerance factor which strongly affects the stability of phases.


2010 ◽  
Vol 24 (15n16) ◽  
pp. 2749-2755 ◽  
Author(s):  
YE WEI ◽  
YING ZHANG ◽  
GUANG-HONG LU ◽  
HUIBIN XU

We employed a first-principles method based on the density functional theory to investigate the effect of impurity O on the site preference and elastic properties of α2- Ti 3 Al . We found that the O atom prefers to occupy the Ti -rich octahedral interstitial site in α2- Ti 3 Al . We calculated the elastic constants of α2- Ti 3 Al with single O atom, which demonstrate that the O presence has no large effect on α2- Ti 3 Al according to the empirical criterions. Other factors such as O cluster should be taken into account to understand the deleterious effect of O on α2- Ti 3 Al . Our results provide a useful reference to further study the mechanical properties of TiAl alloys.


2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Qiang Zhao ◽  
Zheng Zhang ◽  
Yang Li ◽  
Xiaoping Ouyang

The different point defects formed by two hydrogen atoms or two helium atoms in tungsten were investigated through first-principles calculation. The energetically favorable site for a hydrogen atom is tetrahedral interstitial site while substitutional site is the most preferred site for a helium atom. The formation energies of two hydrogen or helium atoms are determined by their positions, and they are not simply 2 times the formation energy of a single hydrogen or helium atom’s defect. After relaxation, two adjacent hydrogen atoms are away from each other while helium atoms are close to each other. The reasons for the interaction between two hydrogen or helium atoms are also discussed.


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