scholarly journals Annealing Effect on the Structure and Optical Properties of CBD-ZnS Thin Films for Windscreen Coating

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6748
Author(s):  
Raghad Y. Mohammed

Zinc sulfide (ZnS) thin films were prepared and synthesized by the chemical bath deposition (CBD) technique on microscopic glass substrates using stoichiometric amounts of the precursor materials (ZnSO4·7H2O, NH4OH, and CS(NH2)2). Structural, morphological, compositional, and optical characterization of the films were studied. The obtained thin films were found to exhibit polycrystalline possessions. The effect of annealing temperature on the crystallographic structure and optical bandgap of ZnS thin films were both examined. The grain size and unit cell volume were both found to be increased. In addition, the strain, dislocation density, and the number of crystallites were found to be decreased with annealing temperature at 300 °C. However, the annealed sample was perceived to have more Zn content than S. The optical characterization reveals that the transmittance was around 76% of the as-deposited thin film and had been decreased to ~50% with the increasing of the annealing temperature. At the same time, the bandgap energy of the as-deposited film was 3.98 eV and was found to be decreased to 3.93 eV after annealing.

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)


2005 ◽  
Vol 19 (15n17) ◽  
pp. 2804-2810 ◽  
Author(s):  
LEI MIAO ◽  
SAKAE TANEMURA ◽  
YASUHIKO HAYASHI ◽  
MASAKI TANEMURA ◽  
RONGPING WANG ◽  
...  

ZnO nanobamboos and nanowires with diameters of 10–30 nm and lengths of 2–4 μm have been prepared by laser ablation in vacuum with precisely controlled pressure, growth and post-annealing temperature. XRD results show the annealed sample is hexagonal ZnO . Low-magnified TEM observation reveals the annealed sample includes ZnO nanobamboos and nanowires. High resolution TEM image and electron diffraction pattern confirm that the structure of ZnO nanobamboo is regular stacking of Zn and O layers with high crystal quality. The growth direction is determined as along [001] direction (c axis). TEM observations confirm that the formation of bamboo-shape ZnO is due to the stacking fault and cleavage. The bundle of those stacking faults seems to be the origin of the black contrast at the nodes. The uniformity of chemical composition for the nanobamboos is identified by EDS profiles. A strong-narrow UV band centred at 390 nm and a weak-broad green band centred at 515 nm are observed at room temperature in the PL spectrum recorded from the annealed ZnO nanobamboos and nanowires.


2013 ◽  
Vol 734-737 ◽  
pp. 2559-2562
Author(s):  
Ying Zhen Li ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Peng Juan Liu ◽  
Qing Yun Lin ◽  
...  

Direct current magnetron co-sputtering was used to deposit zinc antimonide thin films on BK7 glass substrates at room-temperature. Then the films were annealed at 573 K to 673 K for 1 hour in Ar atmosphere. The results indicate that the Seebeck coefficient of the thin films increase from 30.5 μVK-1to 132.5 μVK-1 when the annealing temperature changed. The electrical conductivity of the thin films increases from 3.45×103 to 6.86×103 Sm-1 and the Power Factor is enhanced greatly from 0.03×10-4 to 0.99×10-4 Wm-1K-2 when the annealing temperature reached 598 K. X-ray diffraction result shows that the major diffraction peaks of the thin films match those of β phase Zn4Sb3 and high crystalline thin films are achieved after annealing.


2019 ◽  
Vol 27 (07) ◽  
pp. 1950174
Author(s):  
FATIMA ZOHRA BOUCHAREB ◽  
NASR-EDDINE HAMDADOU

In this work, we have examined the effect of annealing temperature on Cu-doped Bi2O3 thin films at 1%, 3% and 5% doping rate successfully prepared by spray pyrolysis technique onto glass substrates. The obtained films were subsequently annealed at different temperature for 4[Formula: see text]h. GIXRD analysis reveals the polycrystalline nature of deposited films and shows the formation of mixed [Formula: see text]- and [Formula: see text]-Bi2O3 phases. With the increase of doping rate, [Formula: see text]-phase of Bi2O3 was identified at medium temperature. The average grain size of thin films at different doping rate of Cu decreases with the increase of annealing temperature. The optical characterization shows that the optical transmittance of the films decreases with the increase of annealing temperature in the range (70–50%) and (40–10%) for 1% and 5% doping rate of Cu, respectively. The evaluation of the optical bandgap energy reveals that the indirect transition is controlling the optical response of the films. The optimum annealing temperature to reduce Bi2O3 energy bandgap to be 3.09[Formula: see text]eV, is 450∘C and 550∘C for 3% and 5% doping rate of Cu.


2009 ◽  
Vol 206 (9) ◽  
pp. 2143-2148 ◽  
Author(s):  
V. Figueiredo ◽  
E. Elangovan ◽  
G. Gonçalves ◽  
N. Franco ◽  
E. Alves ◽  
...  

2016 ◽  
Vol 3 (2) ◽  
pp. 14-16
Author(s):  
Sengodan R ◽  
Chandar Shekar B

Thermal evaporated Barium titanate (BaTiO3) thin films were prepared on to well cleaned glass substrates under the vacuum of 2 x10-5 torr, using 12A4 Hind Hivac coating unit from the BaTiO3 nanoparticles synthesized by using wet chemical method. The thickness of the film was measured by Quartz crystal monitor. From X-ray analysis, it has been found that the deposited film was polycrystalline in nature. SEM analysis revealed that grains of various sizes having tetragonal shape were uniformly distributed throughout the surface of the film. The dependence of capacitance and loss factor on frequency and temperature were investigated and results are discussed.


2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 


Author(s):  
Fouaz Lekoui ◽  
Salim Hassani ◽  
Mohammed Ouchabane ◽  
Hocine Akkari ◽  
Driss Dergham ◽  
...  

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