scholarly journals Epitaxial Growth of Diamond-Shaped Au1/2Ag1/2CN Nanocrystals on Graphene

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7569
Author(s):  
Chunggeun Park ◽  
Jimin Ham ◽  
Yun Jung Heo ◽  
Won Chul Lee
Keyword(s):  
Electron Beam Irradiation ◽  
2D Materials ◽  
Experimental Investigations ◽  
Pristine Graphene ◽  
In Situ Tem ◽  
Casting Method ◽  
Synthesis Conditions ◽  
Alloy Nanocrystals ◽  
Inorganic Nanomaterials

Epitaxial synthesis of inorganic nanomaterials on pristine 2D materials is of interest in the development of nanostructured devices and nanocomposite materials, but is quite difficult because pristine surfaces of 2D materials are chemically inert. Previous studies found a few exceptions including AuCN, AgCN, CuCN, and Cu0.5Au0.5CN, which can be preferentially synthesized and epitaxially aligned onto various 2D materials. Here, we discover that Au1/2Ag1/2CN forms diamond-shaped nanocrystals epitaxially grown on pristine graphene surfaces. The nanocrystals synthesized by a simple drop-casting method are crystallographically aligned to lattice structures of the underlying graphene. Our experimental investigations on 3D structures and the synthesis conditions of the nanocrystals imply that the rhombic 2D geometries originate from different growth rates depending on orientations along and perpendicular to 1D molecular chains of Au1/2Ag1/2CN. We also perform in situ TEM observations showing that Au1/2Ag1/2CN nanocrystals are decomposed to Au and Ag alloy nanocrystals under electron beam irradiation. Our experimental results provide an additional example of 1D cyanide chain families that form ordered nanocrystals epitaxially aligned on 2D materials, and reveal basic physical characteristics of this rarely investigated nanomaterial.

In situ TEM observation of novel chemical evolution of MnBr2 catalyzed by Cu under electron beam irradiation

2017 ◽  
Vol 686 ◽  
pp. 44-48 ◽  
Author(s):  
Wei Wang ◽  
Xianwei Bai ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
Yuan Yao ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Evolution ◽  
Electron Beam Irradiation ◽  
In Situ Tem ◽  
Beam Irradiation

scholarly journals In situ TEM Approaches to Controlling the Growth of Semiconductors on 2D Materials

2019 ◽  
Vol 25 (S2) ◽  
pp. 1424-1425
Author(s):  
Priyanka Periwal ◽  
Joachim Dahl Thomsen ◽  
Mark C. Reuter ◽  
Dmitri Zakharov ◽  
Lynne Gignac ◽  
...  
Keyword(s):  
2D Materials ◽  
In Situ Tem

In situ TEM investigation of large crystals formation in lithiated SnO2 anode assisted by electron beam irradiation

2021 ◽  
Author(s):  
Yifeng Wen ◽  
Mingyun Zhu ◽  
Shugui Song ◽  
Lei Xin ◽  
Yuwei Xiong ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Lithium Ion ◽  
Underlying Mechanism ◽  
Cycling Performance ◽  
In Situ Tem ◽  
Beam Irradiation ◽  
Working Cycle

The formation of large crystals in anode during the working cycle is harmful to the lithium-ion battery's capacity and cycling performance. However, the underlying mechanism is not revealed clearly, which...

An In-Situ TEM-Cathodoluminescence Study of Electron Beam Degradation of Luminescence from GaN and In0.1Ga0.9N Quantum Wells

2002 ◽  
Vol 743 ◽  
Author(s):  
Nicholas M. Boyall ◽  
Ken Durose ◽  
Ian M. Watson
Keyword(s):  
Electron Beam ◽  
Quantum Wells ◽  
Electron Beam Irradiation ◽  
In Situ Tem ◽  
Beam Irradiation ◽  
Transmission Electron ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis ◽  
Cathodoluminescence Study

ABSTRACTThe effect of electron beam irradiation on the cathodoluminescence (CL) emission from In0.1Ga0.9N/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the In0.1Ga0.9N and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

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