scholarly journals Photoconductivity of Thin Films Obtained from a New Type of Polyindole

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 228
Author(s):  
Renat B. Salikhov ◽  
Akhat G. Mustafin ◽  
Ilnur N. Mullagaliev ◽  
Timur R. Salikhov ◽  
Anastasiia N. Andriianova ◽  
...  
Keyword(s):  
Thin Films ◽  
Fluorescence Spectra ◽  
Test Sample ◽  
Charge Carriers ◽  
Transport Layer ◽  
Photoluminescence Spectra ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
New Type ◽  
Current Voltage Characteristics

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.

scholarly journals Investigation of temperature dependences of current-voltage characteristics of hybrid organic materials based on zinc complexes

2021 ◽  
pp. 81-87
Author(s):  
Andrey Tyutyunik ◽  
Vladimir Gurchenko ◽  
Alim Mazinov
Keyword(s):  
Coordination Compound ◽  
Electrochemical Analysis ◽  
Zinc Complexes ◽  
Charge Carriers ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Homo And Lumo ◽  
Current Voltage Characteristics ◽  
Fundamental Values

In this work, we analyzed the current-voltage characteristics in the temperature range of the hybrid organic material C24H24N6O3Zn in order to determine the prospects for using this compound as a semiconductor material. The range of temperature measurements was from 270 to 330 K. An electrochemical analysis of the studied coordination compound was carried out, the energies of the HOMO and LUMO levels were calculated. The method of obtaining, microscopy, and also the method of measuring the temperature dependences of the electrical properties of the obtained thin films of these hybrid materials based on zinc complexes are described. A number of fundamental values of the films of this coordination compound have been calculated: the activation energy is  0.88 eV and the mobility of charge carriers is  1.4710-11 cm V-1 s-1.

scholarly journals Влияние наночастиц серебра на фотодетектирующие свойства нанокомпозита TiO-=SUB=-2-=/SUB=-/оксид графена

2020 ◽  
Vol 128 (9) ◽  
pp. 1337
Author(s):  
Е.В. Селиверстова ◽  
Н.Х. Ибраев ◽  
А.Ж. Жумабеков
Keyword(s):  
Pure Titanium ◽  
Wavelength Region ◽  
Charge Carriers ◽  
Nanocomposite Material ◽  
Nanocomposite Films ◽  
Long Wavelength ◽  
Photoelectric Properties ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Current Voltage Characteristics

The effect of silver nanoparticles on the optoelectronic and photoelectric properties of a nanocomposite material based on graphene oxide (GO) and TiO2 was studied. The data of electron microscopy and Raman spectroscopy have shown that, the formation of a TiO2-GO nanocomposite material occurs during hydrothermal synthesis. The absorption spectrum of the nanocomposite is shifted to the long-wavelength region relative to the absorption of TiO2. The current–voltage characteristics of photodetector based on TiO2-GO nanocomposite films were increased by 2 and 7.5 times relative to pure titanium dioxide without and with the addition of Ag nanoparticles, respectively. The optoelectronic parameters of the devices were also increased, which is associated with growth in the mobility of charge carriers in nanocomposite films.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

Isometric Stress Analysis and Current-Voltage Characteristics of Some Nanoclay Dielectric Elastomer Compounds

2007 ◽  
Author(s):  
N. Nurminen ◽  
A. Ellman ◽  
V. Jouppila ◽  
M. Paajanen ◽  
M. Karesoja
Keyword(s):  
Material Model ◽  
Dielectric Elastomer ◽  
Adhesive Tape ◽  
Electromechanical Properties ◽  
Dependent Behavior ◽  
Current Voltage ◽  
New Type ◽  
Current Voltage Characteristics ◽  
Compound Materials ◽  
Different Levels

The electromechanical properties of elastomer material change when different levels of stretching are applied to the elastomer film. The generated stress and expansion of the EAP material depend on the electric field across the material and its relative permeability. Some of the best known commercial dielectric elastomer materials are based on acrylic elastomers, e.g. 3M VHB 4910 or 4905 adhesive tape. In this work, the VHB 4910 tape was used as a reference material for different types of acrylic nanoclay compound materials. These new type of nanoclay elastomer compounds were tested because the addition of clay into the elastomer was assumed to increase its actuating performance. Different voltage and pre-stretching levels were used in the measurements. Current-voltage characteristics and isometric stress measurements were used to study the energy efficiency, frequency dependent behavior, reactivity and isometric stress performance of the EAP materials. Based on the electromechanical characterization and material properties, a general hyperelastic material model was developed. According to the preliminary tests, the nanoclay compound seems to be a bit stiffer than VHB 4910 resulting in a greater isometric stress response.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology.

2002 ◽  
Vol 744 ◽  
Author(s):  
Galina Khlyap ◽  
Victor Brytan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Continuous Mode ◽  
Applied Bias ◽  
Near Ir ◽  
Current Voltage ◽  
Exponential Character ◽  
Current Voltage Characteristics ◽  
Amorphous Si ◽  
Spectral Ranges

ABSTRACTElectric field – induced effects are studied in thin films of amorphous Si grown by magnetron sputtering performed in continuous and pulse modes. Current-voltage characteristics are measured under the room temperature in different spectral ranges. It is shown that the investigated dependencies are of exponential character in all range of applied bias. Good photosensitivity was revealed by the samples prepared in continuous mode in the near-IR and visible interval. The samples grown by the pulse magnetron technology were shown room-temperature photosensitivity in near-IR range after 2000C hydrogenation.

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