Isometric Stress Analysis and Current-Voltage Characteristics of Some Nanoclay Dielectric Elastomer Compounds

Author(s):  
N. Nurminen ◽  
A. Ellman ◽  
V. Jouppila ◽  
M. Paajanen ◽  
M. Karesoja

The electromechanical properties of elastomer material change when different levels of stretching are applied to the elastomer film. The generated stress and expansion of the EAP material depend on the electric field across the material and its relative permeability. Some of the best known commercial dielectric elastomer materials are based on acrylic elastomers, e.g. 3M VHB 4910 or 4905 adhesive tape. In this work, the VHB 4910 tape was used as a reference material for different types of acrylic nanoclay compound materials. These new type of nanoclay elastomer compounds were tested because the addition of clay into the elastomer was assumed to increase its actuating performance. Different voltage and pre-stretching levels were used in the measurements. Current-voltage characteristics and isometric stress measurements were used to study the energy efficiency, frequency dependent behavior, reactivity and isometric stress performance of the EAP materials. Based on the electromechanical characterization and material properties, a general hyperelastic material model was developed. According to the preliminary tests, the nanoclay compound seems to be a bit stiffer than VHB 4910 resulting in a greater isometric stress response.

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 228
Author(s):  
Renat B. Salikhov ◽  
Akhat G. Mustafin ◽  
Ilnur N. Mullagaliev ◽  
Timur R. Salikhov ◽  
Anastasiia N. Andriianova ◽  
...  

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.


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