scholarly journals Ferromagnetic Resonance of a [GeTe/Sb2Te3]6/Py Superlattice

2021 ◽  
Vol 7 (12) ◽  
pp. 156
Author(s):  
Satoshi Sumi ◽  
Yuichiro Hirano ◽  
Hiroyuki Awano ◽  
Junji Tominaga
Keyword(s):  
Ferromagnetic Resonance ◽  
High Performance ◽  
Orbit Interaction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Resonance Signal ◽  
Spin Pumping ◽  
Magneto Optical Effect ◽  
Magneto Resistance ◽  
Large Spin

A [GeTe/Sb2Te3] superlattice is known as a topological insulator. It shows magnetic responses such as magneto-optical effect, magneto resistance, magneto capacitance, and so on. We have reported that [GeTe/Sb2Te3] superlattice film has a large spin–orbit interaction using a spin pumping method of a [GeTe/Sb2Te3]/Py superlattice. In this paper, we demonstrate a ST-FMR (spin transfer torque ferromagnetic resonance) of the [GeTe/Sb2Te3]6/Py superlattice, compared with a W/Py bilayer. The superlattice film showed a large resonance signal with a symmetric component. The ratio of symmetric components (S) to anti-symmetric (A) components (S/A) was 1.4, which suggests that the superlattice exhibits a large spin Hall angle. The [GeTe/Sb2Te3] superlattice will be suitable as a hetero-interface material required for high performance spintronics devices in future.

Spin transfer torque ferromagnetic resonance induced spin pumping in the Fe/Pd bilayer system

2017 ◽  
Vol 95 (6) ◽  
Author(s):  
A. Kumar ◽  
S. Akansel ◽  
H. Stopfel ◽  
M. Fazlali ◽  
J. Åkerman ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Pumping ◽  
Bilayer System

scholarly journals High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

2017 ◽  
Vol 7 (9) ◽  
pp. 929 ◽  
Author(s):  
Hao Cai ◽  
Wang Kang ◽  
You Wang ◽  
Lirida Naviner ◽  
Jun Yang ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
High Performance ◽  
Spin Transfer Torque ◽  
Spin Transfer

scholarly journals Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories

2021 ◽  
Vol 11 (4) ◽  
pp. 38
Author(s):  
Mohammad Nasim Imtiaz Khan ◽  
Shivam Bhasin ◽  
Bo Liu ◽  
Alex Yuan ◽  
Anupam Chattopadhyay ◽  
...  
Keyword(s):  
High Performance ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Side Channel ◽  
Secret Key ◽  
Side Channel Attack ◽  
Static Power ◽  
High Scalability ◽  
Power Operation ◽  
Comprehensive Study

Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. However, these memories bring new threats to data security. In this paper, we investigate their vulnerability against Side Channel Attack (SCA). We assume that the adversary can monitor the supply current of the memory array consumed during read/write operations and recover the secret key of Advanced Encryption Standard (AES) execution. First, we show our analysis of simulation results. Then, we use commercial NVM chips to validate the analysis. We also investigate the effectiveness of encoding against SCA on emerging NVMs. Finally, we summarize two new flavors of NVMs that can be resilient against SCA. To the best of our knowledge, this is the first attempt to do a comprehensive study of SCA vulnerability of the majority of emerging NVM-based cache.

scholarly journals A Recent Progress of Spintronics Devices for Integrated Circuit Applications

2018 ◽  
Vol 8 (4) ◽  
pp. 44 ◽  
Author(s):  
Tetsuo Endoh ◽  
Hiroaki Honjo
Keyword(s):  
Integrated Circuit ◽  
High Speed ◽  
High Performance ◽  
Low Voltage ◽  
Review Article ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
The Other ◽  
Recent Advancement ◽  
Spintronics Device

Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into the market by major semiconductor foundry companies. On the other hand, a development of the NV memories using other writing schemes are now underway. In this review article, first, the recent advancement of the spintronics device using STT and the NV memories using them are reviewed. Next, spintronics devices using the other two writing schemes (SOT and E-field) are briefly reviewed, including issues to be addressed for the NV memories application.

Spin-transfer torque induced domain wall ferromagnetic resonance in nanostrips

2013 ◽  
Vol 332 ◽  
pp. 56-60 ◽  
Author(s):  
Xi-guang Wang ◽  
Guang-hua Guo ◽  
Guang-fu Zhang ◽  
Yao-zhuang Nie ◽  
Qing-lin Xia ◽  
...  
Keyword(s):  
Domain Wall ◽  
Ferromagnetic Resonance ◽  
Spin Transfer Torque ◽  
Spin Transfer

The dependence of critical current density of GdFeCo layer on composition of thermally assisted STT-RAM

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744075
Author(s):  
B. Dai ◽  
J. Zhu ◽  
K. Liu ◽  
L. Yang ◽  
J. Han
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Anisotropy Constant ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Text Memory ◽  
Effective Anisotropy Constant ◽  
Current Densities ◽  
Magneto Resistance

Amorphous rare earth–transitional metal (RETM) GdFeCo memory layer with RE- and TM-rich compositions was fabricated in stacks of GdFeCo (10 nm)/Cu (3 nm)/[Co(0.2 nm)/Pd(0.4 nm)]6. Their magnetic properties and spin transfer torque (STT) switching of magnetization were investigated. The maximum magneto-resistance (MR) was around 0.24% for the TM-rich Gd[Formula: see text] (Fe[Formula: see text]Co[Formula: see text])[Formula: see text] memory layer and was −0.03% for the RE-rich Gd[Formula: see text] (Fe[Formula: see text]Co[Formula: see text])[Formula: see text] memory layer. The critical current densities [Formula: see text] to switch the GdFeCo memory layers are in the range of [Formula: see text] A/cm2–[Formula: see text] A/cm2. The dependence of critical current density [Formula: see text] and effective anisotropy constant [Formula: see text] on Gd composition were also investigated. Both [Formula: see text] and [Formula: see text] have maximum values in the Gd composition range from 21–29 at.%, suitable for thermally assisted STT-RAM for storage density exceeding Gb/inch2.

Ferromagnetic resonance driven by spin transfer torque

2011 ◽  
Vol 519 (23) ◽  
pp. 8260-8262 ◽  
Author(s):  
T. Staudacher ◽  
M. Tsoi
Keyword(s):  
Ferromagnetic Resonance ◽  
Spin Transfer Torque ◽  
Spin Transfer
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