scholarly journals Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation

Membranes ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 931
Author(s):  
Gunhoo Woo ◽  
Hocheon Yoo ◽  
Taesung Kim
Keyword(s):  
Integrated Circuits ◽  
Organic Semiconductors ◽  
Transition Metal Dichalcogenides ◽  
Semiconductor Materials ◽  
Integration Process ◽  
Considerable Effort ◽  
Material Combination ◽  
Hybrid Thin Film ◽  
Metal Dichalcogenides ◽  
Weak Points

Beyond conventional silicon, emerging semiconductor materials have been actively investigated for the development of integrated circuits (ICs). Considerable effort has been put into implementing complementary circuits using non-silicon emerging materials, such as organic semiconductors, carbon nanotubes, metal oxides, transition metal dichalcogenides, and perovskites. Whereas shortcomings of each candidate semiconductor limit the development of complementary ICs, an approach of hybrid materials is considered as a new solution to the complementary integration process. This article revisits recent advances in hybrid-material combination-based complementary circuits. This review summarizes the strong and weak points of the respective candidates, focusing on their complementary circuit integrations. We also discuss the opportunities and challenges presented by the prospect of hybrid integration.

scholarly journals Wafer scale synthesis of organic semiconductor nanosheets for van der Waals heterojunction devices

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sirri Batuhan Kalkan ◽  
Emad Najafidehaghani ◽  
Ziyang Gan ◽  
Fabian Alexander Christian Apfelbeck ◽  
Uwe Hübner ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Physical Vapor Deposition ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Wafer Scale ◽  
Heterojunction Devices ◽  
Wide Range ◽  
Conformal Electronics ◽  
Metal Dichalcogenides

AbstractOrganic semiconductors (OSC) are widely used for consumer electronic products owing to their attractive properties such as flexibility and low production cost. Atomically thin transition metal dichalcogenides (TMDs) are another class of emerging materials with superior electronic and optical properties. Integrating them into van der Waals (vdW) heterostructures provides an opportunity to harness the advantages of both material systems. However, building such heterojunctions by conventional physical vapor deposition (PVD) of OSCs is challenging, since the growth is disrupted due to limited diffusion of the molecules on the TMD surface. Here we report wafer-scale (3-inch) fabrication of transferable OSC nanosheets with thickness down to 15 nm, which enable the realization of heterojunction devices. By controlled dissolution of a poly(acrylic acid) film, on which the OSC films were grown by PVD, they can be released and transferred onto arbitrary substrates. OSC crystal quality and optical anisotropy are preserved during the transfer process. By transferring OSC nanosheets (p-type) onto prefabricated electrodes and TMD monolayers (n-type), we fabricate and characterize various electronic devices including unipolar, ambipolar and antiambipolar field-effect transistors. Such vdW p-n heterojunction devices open up a wide range of possible applications ranging from ultrafast photodetectors to conformal electronics.

scholarly journals Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ying Jiang ◽  
Shula Chen ◽  
Weihao Zheng ◽  
Biyuan Zheng ◽  
Anlian Pan
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Great Promise ◽  
Comprehensive Overview ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Population Recombination

AbstractVan der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits, which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit. As a consequence, numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons, including revealing their ultrafast formation, long population recombination lifetimes, and intriguing spin-valley dynamics. These outstanding properties ensure interlayer excitons with good transport characteristics, and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures. At present, a systematic and comprehensive overview of interlayer exciton formation, relaxation, transport, and potential applications is still lacking. In this review, we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field.

Spatially Resolved Photogenerated Exciton and Charge Transport in Emerging Semiconductors

2020 ◽  
Vol 71 (1) ◽  
pp. 1-30 ◽  
Author(s):  
Naomi S. Ginsberg ◽  
William A. Tisdale
Keyword(s):  
Organic Semiconductors ◽  
Energy Transport ◽  
Transition Metal Dichalcogenides ◽  
Electronic Energy ◽  
Time Resolved ◽  
Spatially Resolved ◽  
New Family ◽  
Dependent Rate ◽  
Metal Dichalcogenides ◽  
Colloidal Quantum Dot

We review recent advances in the characterization of electronic forms of energy transport in emerging semiconductors. The approaches described all temporally and spatially resolve the evolution of initially localized populations of photogenerated excitons or charge carriers. We first provide a comprehensive background for describing the physical origin and nature of electronic energy transport both microscopically and from the perspective of the observer. We introduce the new family of far-field, time-resolved optical microscopies developed to directly resolve not only the extent of this transport but also its potentially temporally and spatially dependent rate. We review a representation of examples from the recent literature, including investigation of energy flow in colloidal quantum dot solids, organic semiconductors, organic-inorganic metal halide perovskites, and 2D transition metal dichalcogenides. These examples illustrate how traditional parameters like diffusivity are applicable only within limited spatiotemporal ranges and how the techniques at the core of this review,especially when taken together, are revealing a more complete picture of the spatiotemporal evolution of energy transport in complex semiconductors, even as a function of their structural heterogeneities.

scholarly journals Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 832
Author(s):  
Hocheon Yoo ◽  
Keun Heo ◽  
Md. Hasan Raza Ansari ◽  
Seongjae Cho
Keyword(s):  
Electrical Properties ◽  
Transition Metal Dichalcogenides ◽  
Visible Region ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Semiconductor Materials ◽  
Two Dimensional ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Physical And Chemical

Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.

scholarly journals Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Frédéric Peyskens ◽  
Chitraleema Chakraborty ◽  
Muhammad Muneeb ◽  
Dries Van Thourhout ◽  
Dirk Englund
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Large Scale ◽  
Single Photon ◽  
Transition Metal Dichalcogenides ◽  
Building Blocks ◽  
Single Photon Emitters ◽  
Metal Dichalcogenides ◽  
On Chip ◽  
Scale Integration

Abstract Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.

scholarly journals Engineering of TMDC-OSC Hybrid Interfaces: The Thermodynamics of Unitary and Mixed Acene Monolayers on MoS2

2021 ◽  
Author(s):  
Stefan Renato Kachel ◽  
Pierre-Martin Dombrowski ◽  
Tobias Breuer ◽  
Michael Gottfried ◽  
Gregor Witte
Keyword(s):  
Transition Metal ◽  
Hybrid Systems ◽  
Organic Semiconductors ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Hybrid systems of two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) and organic semiconductors (OSCs) have become subject of great interest for future device architectures. Although OSC-TMDC hybrid systems...

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