scholarly journals A Resonant Pressure Sensor Based upon Electrostatically Comb Driven and Piezoresistively Sensed Lateral Resonators

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 460 ◽  
Author(s):  
Xiaoqing Shi ◽  
Sen Zhang ◽  
Deyong Chen ◽  
Junbo Wang ◽  
Jian Chen ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
Open Loop ◽  
Quality Factors ◽  
Crystal Silicon ◽  
Pressure Sensitive ◽  
Lower Temperature ◽  
Silicon Based ◽  
Stress Variations

This study proposes a microfabricated resonant pressure sensor in which a pair of double-ended tuning forks were utilized as resonators where comb electrodes and single-crystal silicon-based piezoresistors were used for electrostatic excitation and piezoresistive detection, respectively. In operations, pressures under measurements deform the pressure-sensitive diaphragm to cause stress variations of two resonators distributed on the central and side positions of the pressure-sensitive diaphragm, where the corresponding changes of the intrinsic resonant frequencies are then captured piezoresistively. The developed resonant pressure sensors were fabricated based on MEMS with open-loop and closed-loop characterizations conducted. Key sensing parameters including quality factors, differential pressure/temperature sensitivities and fitting errors were quantified as higher than 17,000, 48.24 Hz/kPa, 0.15 Hz/°C and better than 0.01% F.S. (140 kpa), respectively. In comparison to previously reported resonant pressure sensors driven by parallel-plate electrodes, the developed sensor in this study is featured with a lower temperature sensitivity and a higher stability.

scholarly journals A Double-Ended Tuning Fork Based Resonant Pressure Micro-Sensor Relying on Electrostatic Excitation and Piezoresistive Detection

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 875
Author(s):  
Xiaoqing Shi ◽  
Yulan Lu ◽  
Bo Xie ◽  
Chao Xiang ◽  
Junbo Wang ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Single Crystal Silicon ◽  
Open Loop ◽  
Differential Sensitivity ◽  
Crystal Silicon ◽  
Resonant Frequencies ◽  
Piezoresistive Sensors ◽  
Pressure Sensitive ◽  
Micro Sensor ◽  
Stress Variations

This study proposes a microfabricated resonant pressure sensor based on electrostatic excitation and low-impedance piezoresistive detection in which a pair of double-ended tuning forks were utilized as resonators for differential outputs. In operations, targeted pressures deforms the pressure-sensitive membrane, resulting in stress variations of two resonators, leading to shifts of the intrinsic resonant frequencies, which were then measured piezoresistively. The developed microfabricated resonant pressure sensor was fabricated using simple SOI-MEMS processes and quantified in both open-loop and closed-loop manners, where the quality factor, differential sensitivity and linear correlation coefficient were quantified as higher than 10,000, 79.4 Hz/kPa and 0.99999, respectively. Compared to previous resonant piezoresistive sensors, the developed device leveraged single-crystal silicon as the piezoresistor, with advantages in simple sensing structures and fabrication steps. Furthermore, the differential setup was adopted in this study which can further improve the performances of the developed sensors.

scholarly journals A Resonant Pressure Microsensor Based on Double-Ended Tuning Fork and Electrostatic Excitation/Piezoresistive Detection

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2494 ◽  
Author(s):  
Xiaoqing Shi ◽  
Yulan Lu ◽  
Bo Xie ◽  
Yadong Li ◽  
Junbo Wang ◽  
...  
Keyword(s):  
Tuning Fork ◽  
Single Crystal Silicon ◽  
Open Loop ◽  
Quality Factors ◽  
Accuracy Rate ◽  
Crystal Silicon ◽  
Piezoresistive Sensors ◽  
Pressure Sensitive ◽  
Tuning Forks ◽  
Stress Buildup

This paper presents a resonant pressure microsensor relying on electrostatic excitation and piezoresistive detection where two double-ended tuning forks were used as resonators, enabling differential outputs. Pressure under measurement caused the deformation of the pressure sensitive membrane, leading to stress buildup of the resonator under electrostatic excitation with a corresponding shift of the resonant frequency detected piezoresistively. The proposed microsensor was fabricated by simplified SOI-MEMS technologies and characterized by both open-loop and closed-loop circuits, producing a quality factor higher than 10,000, a sensitivity of 79.44 Hz/kPa and an accuracy rate of over 0.01% F.S. In comparison to the previously reported resonant piezoresistive sensors, the proposed device used single-crystal silicon as piezoresistors, which was featured with low DC biased voltages, simple sensing structures and fabrication steps. In addition, the two double-ended tuning forks were used as resonators, producing high quality factors and differential outputs, which further improved the sensor performances.

Assembly and Testing of Surface Micromachined, Piezoresistive Polysilicon Pressure Sensors

1999 ◽  
Author(s):  
Todd F. Miller ◽  
David J. Monk ◽  
Gary O’Brien ◽  
William P. Eaton ◽  
James H. Smith
Keyword(s):  
Pressure Sensor ◽  
Microelectromechanical Systems ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
Surface Micromachining ◽  
Process Technology ◽  
Crystal Silicon ◽  
Noise Characteristics ◽  
Testing Techniques ◽  
Piezoresistive Pressure Sensors

Abstract Surface micromachining is becoming increasingly popular for microelectromechanical systems (MEMS) and a new application for this process technology is pressure sensors. Uncompensated surface micromachined piezoresistive pressure sensors were fabricated by Sandia National Labs (SNL). Motorola packaged and tested the sensors over pressure, temperature and in a typical circuit application for noise characteristics. A brief overview of surface micromachining related to pressure sensors is described in the report along with the packaging and testing techniques used. The electrical data found is presented in a comparative manner between the surface micromachined SNL piezoresistive polysilicon pressure sensor and a bulk micromachined Motorola piezoresistive single crystal silicon pressure sensor.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

scholarly journals Single-Layer Pressure Textile Sensors with Woven Conductive Yarn Circuit

2020 ◽  
Vol 10 (8) ◽  
pp. 2877 ◽  
Author(s):  
Gaeul Kim ◽  
Chi Cuong Vu ◽  
Jooyong Kim
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Layer ◽  
Fast Response ◽  
Resistance Change ◽  
Load Pressure ◽  
Pressure Sensitive ◽  
High Durability ◽  
Textile Sensors ◽  
Conductive Fibers

Today, e-textiles have become a fundamental trend in wearable devices. Fabric pressure sensors, as a part of e-textiles, have also received much interest from many researchers all over the world. However, most of the pressure sensors are made of electronic fibers and composed of many layers, including an intermediate layer for sensing the pressure. This paper proposes the model of a single layer pressure sensor with electrodes and conductive fibers intertwined. The plan dimensions of the fabricated sensors are 14 x 14 mm, and the thickness is 0.4 mm. The whole area of the sensor is the pressure-sensitive point. As expected, results demonstrate an electrical resistance change from 283 Ω at the unload pressure to 158 Ω at the load pressure. Besides, sensors have a fast response time (50 ms) and small hysteresis (5.5%). The hysteresis will increase according to the pressure and loading distance, but the change of sensor loading distance is very small. Moreover, the single-layer pressure sensors also show high durability under many working cycles (20,000 cycles) or washing times (50 times). The single-layer pressure sensor is very thin and more flexible than the multi-layer pressure sensor. The structure of this sensor is also expected to bring great benefits to wearable technology in the future.

Flexible hemispheric microarrays of highly pressure-sensitive sensors based on breath figure method

Nanoscale ◽  
2018 ◽  
Vol 10 (22) ◽  
pp. 10691-10698 ◽  
Author(s):  
Zhihui Wang ◽  
Ling Zhang ◽  
Jin Liu ◽  
Hao Jiang ◽  
Chunzhong Li
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Pressure Sensing ◽  
Sensing Range ◽  
Pressure Sensitive ◽  
Breath Figure ◽  
Breath Figure Method ◽  
Flexible Pressure Sensors

Flexible pressure sensors with interlocked hemispheric microstructures are prepared by a novel breath figure strategy. The subtle microstructure remarkably improves the sensitivity and pressure sensing range of the pressure sensor.

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