scholarly journals A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 385
Author(s):  
Qiao Wang ◽  
Donglin Zhang ◽  
Yulin Zhao ◽  
Chao Liu ◽  
Qiao Hu ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Reliability ◽  
Charge Sharing ◽  
Operation Speed ◽  
Sharing Function ◽  
Logic Operations ◽  
A Charge ◽  
Process Compatibility ◽  
Ferroelectric Capacitors

Ferroelectric capacitors (FeCAPs) with high process compatibility, high reliability, ultra-low programming current and fast operation speed are promising candidates to traditional volatile and nonvolatile memory. In addition, they have great potential in the fields of storage, computing, and memory logic. Nevertheless, effective methods to realize logic and memory in FeCAP devices are still lacking. This study proposes a 1T2C FeCAP-based in situ bitwise X(N)OR logic based on a charge-sharing function. First, using the 1T2C structure and a two-step write-back circuit, the nondestructive reading is realized with less complexity than the previous work. Second, a method of two-line activation is used during the operation of X(N)OR. The verification results show that the speed, area and power consumption of the proposed 1T2C FeCAP-based bitwise logic operations are significantly improved.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

In Situ Testing and X Rays Radiation Effects of Pt/Bi3.15Nd0.85Ti3O12/Pt Ferroelectric Capacitors

2013 ◽  
Vol 712-715 ◽  
pp. 293-297
Author(s):  
Li Li
Keyword(s):  
Radiation Effects ◽  
Hysteresis Loops ◽  
Electrical Performance ◽  
Hysteresis Curve ◽  
X Rays ◽  
Shanghai Synchrotron Radiation Facility ◽  
X Ray ◽  
In The Beginning ◽  
Ferroelectric Capacitors

Pt/Bi3.15Nd0.85Ti3O12(BNT)/Pt ferroelectric capacitors were monitored using in situ X-ray irradiation with 10 keV at BL14B1 beamline (Shanghai Synchrotron Radiation Facility). BL14B1 combined with a ferroelectric analyzer enabled measurements in situ of electrical performance. The hysteresis curve (PE) of distortion depended on the polarization during irradiation, but the diffracted intensities of the (117) peak did not change in the beginning. ThePEcurve had a negligible change from 2.09×109Gy to 4.45×109Gy. Finally, bothPrandPr+very rapidly increased, but the intensities of (117) decreased. The hysteresis loops were remarkably deformed at the maximum total dose of 4.87×109Gy.

Integrity Assurance of an Oil Transportation Pipeline in a Transformed Design Environment

2015 ◽  
Author(s):  
Amitabh Kumar ◽  
Brian McShane ◽  
Mark McQueen
Keyword(s):  
Field Data ◽  
Oil And Gas ◽  
High Reliability ◽  
Complex Loading ◽  
Calibration Method ◽  
Real Field ◽  
Design Environment ◽  
Data Feedback ◽  
Integrity Management

A large Oil and Gas pipeline gathering system is commonly used to transport processed oil and gas from an offshore platform to an onshore receiving facility. High reliability and integrity for continuous operation of these systems is crucial to ensure constant supply of hydrocarbon to the onshore processing facility and eventually to market. When such a system is exposed to a series of complex environmental loadings, it is often difficult to predict the response path, in-situ condition and therefore the system’s ability to withstand subsequent future loading scenarios. In order to continue to operate the pipeline after a significant environmental event, an overall approach needs to be developed to — (a) Understand the system loading and the associated integrity, (b) Develop a series of criteria staging the sequence of actions following an event that will verify the pipeline integrity and (c) Ensure that the integrity management solution is simple and easy to understand so that it can be implemented consistently. For a complex loading scenario, one of the main challenges is the ability to predict the controlling parameter(s) that drives the global integrity of these systems. In such scenarios, the presence of numerous parameters makes the technical modeling and prediction tasks arduous. To address such scenarios, first and foremost, it is crucial to understand the baseline environment data and other associated critical design input elements. If the “design environmental baseline” has transformed (due to large events e.g. storms etc.) from its original condition; it modifies the dynamics of the system. To address this problem, a thorough modeling and assessment of the in-situ condition is essential. Further, a robust calibration method is required to predict the future response path and therefore expected pipeline condition. The study further compares the planned integrity management solutions to the field data to validate the efficiency of the predicted scenarios. By the inclusion of real field-data feedback to the modeling method, balanced integrity solutions can be achieved and the ability to quantify the risks is made more practical and actionable.

MTL: Memristor Ternary Logic Design

2020 ◽  
Vol 30 (15) ◽  
pp. 2050222
Author(s):  
Li Luo ◽  
Zhekang Dong ◽  
Xiaofang Hu ◽  
Lidan Wang ◽  
Shukai Duan
Keyword(s):  
Logic Circuits ◽  
Logic Design ◽  
Ternary Logic ◽  
Nanoscale Device ◽  
State Variable ◽  
Operation Speed ◽  
Input And Output ◽  
Single Input ◽  
Logic Operations ◽  
High Information

The nanoscale implementations of ternary logic circuits are particularly attractive because of high information density and operation speed that can be achieved by using emerging memristor technologies. Memristor is a nanoscale device with nonvolatility and adjustable multilevel states, which creates an intriguing opportunity for the implementation of ternary logic operations. This paper proposes a novel memristor-based design for stateful ternary logic, including AND, OR, NOT, NAND, NOR, and COPY operations. In the proposed memristor ternary logic (MTL) design, the resistance of memristor is the only logic state variable for representing the input and output. By sensing the value of the input memristors, the resistance of the output memristor changes accordingly. Furthermore, the MTL gates are not only capable of performing logic operations, but also storing logic values. To illustrate the potential of the methodology, a single-input-three-output ternary decoder is designed by using the proposed ternary logic circuits. Simulation results verify the effectiveness of the presented design.

scholarly journals A Charge-Sharing Bandpass Filter Topology with Boosted Q-Factor in 40-NM CMOS

2018 ◽  
Author(s):  
Filipe D. Baumgratz ◽  
Sandro B. Ferreira ◽  
Michiel Steyaert ◽  
Sergio Bampi ◽  
Filip Tavernier
Keyword(s):  
Bandpass Filter ◽  
Q Factor ◽  
Charge Sharing ◽  
A Charge

High Reliability Poly-Oxide Grown on in-situ Phosphorus Doped Amorphous Si

1990 ◽  
Author(s):  
Takashi KOBAYASHI ◽  
Shinpei IIJIMA ◽  
Atsushi HIRAIWA
Keyword(s):  
High Reliability ◽  
Amorphous Si ◽  
Phosphorus Doped

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

2015 ◽  
Vol 1 (6) ◽  
pp. 1500045 ◽  
Author(s):  
Mohamed T. Ghoneim ◽  
Mohammed A. Zidan ◽  
Mohammed Y. Alnassar ◽  
Amir N. Hanna ◽  
Jurgen Kosel ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors

IONIZATION OF CHARGE-ANTICHARGE PAIRS IN ULTRATHIN PALLADIUM FILMS

1995 ◽  
Vol 09 (15) ◽  
pp. 939-946 ◽  
Author(s):  
YING LIU ◽  
JOHN C. PRICE
Keyword(s):  
Low Temperature ◽  
Electrical Conductance ◽  
Activation Energies ◽  
Arrhenius Behavior ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
A Charge

The electrical conductance and I–V characteristics of ultrathin Pd films prepared by low temperature deposition have been measured in situ. An Arrhenius behavior was found for the electrical conductance. A crossover between regimes with different activation energies was observed at a temperature TK. Below TK, the I–V characteristics of the film were found to be nonlinear. These observations are explained using a charge Kosterlitz-Thouless-Berezinskii transition picture which involves the ionization of charge-anticharge pairs.

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