scholarly journals Solidly Mounted Longitudinally Excited Shear Wave Resonator (YBAR) Based on Lithium Niobate Thin-Film

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1039
Author(s):  
Zhen-Hui Qin ◽  
Shu-Mao Wu ◽  
Yong Wang ◽  
Kang-Fu Liu ◽  
Tao Wu ◽  
...  
Keyword(s):  
Shear Wave ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Low Cost ◽  
Electromechanical Coupling Coefficient ◽  
Platinum Electrodes ◽  
Temperature Drift ◽  
Large Bandwidth ◽  
Wave Resonator ◽  
5 Ghz

This paper proposed a solid-mounted (SM) longitudinally excited shear wave resonator (i.e., YBAR). By adopting a 200 nm x-cut LiNbO3 film, top (aluminum) and bottom (platinum) electrodes in 50 nm thickness and 500 nm width, this resonator simultaneously achieves an operating frequency over 5 GHz with an electromechanical coupling coefficient exceeding 50%. Compared with previously proposed YBAR with suspended structure, the proposed SM-YBAR can effectively suppress unwanted spurious modes with only a slight loss of the electromechanical coupling coefficient. The SM-YABR also provides better device stability, possible low-temperature drift coefficient, and a more convenient and mature device processing. It has the potential to meet the multiple requirements for the next generation signal processing devices in terms of high frequency, large bandwidth, stability, and low cost, etc.

Sb5+ Modified Phase Transition in (Li, Na, K)(Nb1-xSbx)O3 Piezoelectric Ceramics

2016 ◽  
Vol 848 ◽  
pp. 339-343
Author(s):  
Xiao Kun Zhao ◽  
Bo Ping Zhang ◽  
Lei Zhao ◽  
Li Feng Zhu
Keyword(s):  
Phase Transition ◽  
Phase Boundary ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Piezoelectric Coefficient ◽  
Electromechanical Coupling Coefficient ◽  
Second Phase ◽  
Phase Transition Temperatures ◽  
Two Peaks ◽  
Planar Mode

The modified behavior of the phase transition temperatures (TO-T and/or TC) between orthorhombic (O), tetragonal (T) and cubic (C) that caused by doping Sb5+ in (Li0.052Na0.493K0.455)(Nb1-xSbx)O3 (LNKNSx) ceramics was reported in the present investigation. The results show that differing from the insensitive TO-T to the Sb5+ content, TC splits into two peaks TCI and TCII when doping Sb5+. The decreased TCI by raising x may be ascribed to the Sb-rich grains and the settled TCII round 480 °C resulting from the Sb-lack ones. The enhanced piezoelectric coefficient d33 value of 263 pC/N and planar mode electromechanical coupling coefficient kp value of 42.5% at x=0.052 can be attributed to the polymorphic phase boundary (PPB) behavior with an appropriate ratio between T and O phases without any second phase.

Surface acoustic wave resonator from thick MOVPE-grown layers of GaN(0001) on sapphire

2002 ◽  
Vol 743 ◽  
Author(s):  
Sverre V. Pettersen ◽  
Thomas Tybell ◽  
Arne Rønnekleiv ◽  
Stig Rooth ◽  
Veit Schwegler ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Electromechanical Coupling ◽  
Film Surface ◽  
Center Frequency ◽  
Electromechanical Coupling Coefficient ◽  
Nitride Film ◽  
Wave Resonator ◽  
Lift Off ◽  
Definition Of

ABSTRACTWe report on fabrication and measurement of a surface acoustic wave resonator prepared on ∼10m thick GaN(0001) films. The films were grown by metal-organic vapor phase epitaxy on a c-plane sapphire substrate. The surface morphology of the films were examined with scanning electron and atomic force microscopy. A metallic bilayer of Al/Ti was subsequently evaporated on the nitride film surface. Definition of the resonator interdigital transducers, designed for a wavelength of λ=7.76m, was accomplished with standard UV lithography and lift-off. S-parameter measurements showed a resonator center frequency f0=495MHz at room temperature, corresponding to a surface acoustic wave velocity of 3844m/s. The insertion loss at center frequency was measured at 8.2dB, and the loaded Q-factor was estimated at 2200. Finally, measurements of the resonator center frequency for temperatures in the range 25–155°C showed a temperature coefficient of -18ppm/°C. The intrinsic GaN SAW velocity and electromechanical coupling coefficient were estimated at νSAW=383 1m/s and K2=1.8±0.4·10−3.

scholarly journals Combined piezoelectric and flexoelectric effects in resonant dynamics of nanocantilevers

2018 ◽  
Vol 29 (20) ◽  
pp. 3949-3959 ◽  
Author(s):  
Adriane G Moura ◽  
Alper Erturk
Keyword(s):  
Barium Titanate ◽  
Frequency Response ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Analytical Framework ◽  
Electromechanical Coupling Coefficient ◽  
Sensors And Actuators ◽  
Energy Harvesters ◽  
Size Dependent ◽  
Resonant Dynamics

We establish and analyze an analytical framework by accounting for both the piezoelectric and flexoelectric effects in bimorph cantilevers. The focus is placed on the development of governing electroelastodynamic piezoelectric–flexoelectric equations for the problems of resonant energy harvesting, sensing, and actuation. The coupled governing equations are analyzed to obtain closed-form frequency response expressions via modal analysis. The combined piezoelectric–flexoelectric coupling coefficient expression is identified and its size dependence is explored. Specifically, a typical atomistic value of the flexoelectric constant for barium titanate is employed in the model simulations along with its piezoelectric constant from the existing literature. It is shown that the effective electromechanical coupling of a piezoelectric material, such as barium titanate, is significantly enhanced for thickness levels below 100 nm. The electromechanical coupling coefficient of a barium titanate bimorph cantilever increases from the bulk piezoelectric value of 0.065 to the combined piezoelectric–flexoelectric value exceeding 0.3 toward nanometer thickness level. Electromechanical frequency response functions for resonant power generation and dynamic actuation also capture the size-dependent enhancement of the electromechanical coupling. The analytical framework given here can be used for parameter identification and design of nanoscale cantilevers that can be used as energy harvesters, sensors, and actuators.

scholarly journals FEM Analysis of Various Multilayer Structures for CMOS Compatible Wearable Acousto-Optic Devices

Sensors ◽  
2021 ◽  
Vol 21 (23) ◽  
pp. 7863
Author(s):  
Mehwish Hanif ◽  
Varun Jeoti ◽  
Mohamad Radzi Ahmad ◽  
Muhammad Zubair Aslam ◽  
Saima Qureshi ◽  
...  
Keyword(s):  
Coupling Coefficient ◽  
Figure Of Merit ◽  
Electromechanical Coupling ◽  
Piezoelectric Materials ◽  
Fem Analysis ◽  
Film Structure ◽  
Multilayer Structures ◽  
Electromechanical Coupling Coefficient ◽  
Materials Used ◽  
The Individual

Lately, wearable applications featuring photonic on-chip sensors are on the rise. Among many ways of controlling and/or modulating, the acousto-optic technique is seen to be a popular technique. This paper undertakes the study of different multilayer structures that can be fabricated for realizing an acousto-optic device, the objective being to obtain a high acousto-optic figure of merit (AOFM). By varying the thicknesses of the layers of these materials, several properties are discussed. The study shows that the multilayer thin film structure-based devices can give a high value of electromechanical coupling coefficient (k2) and a high AOFM as compared to the bulk piezoelectric/optical materials. The study is conducted to find the optimal normalised thickness of the multilayer structures with a material possessing the best optical and piezoelectric properties for fabricating acousto-optic devices. Based on simulations and studies of SAW propagation characteristics such as the electromechanical coupling coefficient (k2) and phase velocity (v), the acousto-optic figure of merit is calculated. The maximum value of the acousto-optic figure of merit achieved is higher than the AOFM of all the individual materials used in these layer structures. The suggested SAW device has potential application in wearable and small footprint acousto-optic devices and gives better results than those made with bulk piezoelectric materials.

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