scholarly journals Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 544 ◽  
Author(s):  
Ganesh Jayakumar ◽  
Per-Erik Hellström ◽  
Mikael Östling
Keyword(s):  
Real Time ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Efficient Production ◽  
Lab On Chip ◽  
Multiplexed Detection ◽  
Turn On ◽  
Strong Inversion ◽  
On Chip ◽  
P Type

Silicon ribbons (SiRi) have been well-established as highly sensitive transducers for biosensing applications thanks to their high surface to volume ratio. However, selective and multiplexed detection of biomarkers remains a challenge. Further, very few attempts have been made to integrate SiRi with complementary-metal-oxide-semiconductor (CMOS) circuits to form a complete lab-on-chip (LOC). Integration of SiRi with CMOS will facilitate real time detection of the output signal and provide a compact small sized LOC. Here, we propose a novel pixel based SiRi device monolithically integrated with CMOS field-effect-transistors (FET) for real-time selective multiplexed detection. The SiRi pixels are fabricated on a silicon-on-insulator wafer using a top-down method. Each pixel houses a control FET, fluid-gate (FG) and SiRi sensor. The pixel is controlled by simultaneously applying frontgate (VG) and backgate voltage (VBG). The liquid potential can be monitored using the FG. We report the transfer characteristics (ID-VG) of N- and P-type SiRi pixels. Further, the ID-VG characteristics of the SiRis are studied at different VBG. The application of VBG to turn ON the SiRi modulates the subthreshold slope (SS) and threshold voltage (VTH) of the control FET. Particularly, N-type pixels cannot be turned OFF due to the control NFET operating in the strong inversion regime. This is due to large VBG (≥25 V) application to turn ON the SiRi sensor. Conversely, the P-type SiRi sensors do not require large VBG to switch ON. Thus, P-type pixels exhibit excellent ION/IOFF ≥ 106, SS of 70–80 mV/dec and VTH of 0.5 V. These promising results will empower the large-scale cost-efficient production of SiRi based LOC sensors.

scholarly journals Quantitative and rapid Plasmodium falciparum malaria diagnosis and artemisinin-resistance detection using a CMOS Lab-on-Chip platform

2019 ◽  
Author(s):  
K. Malpartida-Cardenas ◽  
N. Miscourides ◽  
J. Rodriguez-Manzano ◽  
L. S. Yu ◽  
J. Baum ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Point Of Care ◽  
Artemisinin Resistance ◽  
Diagnostic Methods ◽  
Nucleic Acid Amplification ◽  
Optical Measurements ◽  
Oxide Semiconductor ◽  
Analytical Sensitivity ◽  
Lab On Chip ◽  
On Chip

AbstractEarly and accurate diagnosis of malaria and drug-resistance is essential to effective disease management. Available rapid malaria diagnostic tests present limitations in analytical sensitivity, drug-resistant testing and/or quantification. Conversely, diagnostic methods based on nucleic acid amplification stepped forwards owing to their high sensitivity, specificity and robustness. Nevertheless, these methods commonly rely on optical measurements and complex instrumentation which limit their applicability in resource-poor, point-of-care settings. This paper reports the specific, quantitative and fully-electronic detection of Plas-modium falciparum, the predominant malaria-causing parasite worldwide, using a Lab-on-Chip platform developed in-house. Furthermore, we demonstrate on-chip detection of C580Y, the most prevalent single-nucleotide polymorphism associated to artemisinin-resistant malaria. Real-time non-optical DNA sensing is facilitated using Ion-Sensitive Field-Effect Transistors, fabricated in unmodified complementary metal-oxide-semiconductor technology, coupled with loop-mediated isothermal amplification. This work holds significant potential for the development of a fully portable and quantitative malaria diagnostic that can be used as a rapid point-of-care test.

scholarly journals A Sensitive Potentiometric Sensor for Isothermal Amplification-Coupled Detection of Nucleic Acids

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2277
Author(s):  
Kang-Ho Lee ◽  
Dongkyu Lee ◽  
Jongsu Yoon ◽  
Ohwon Kwon ◽  
Jaejong Lee
Keyword(s):  
Nucleic Acids ◽  
Real Time ◽  
Surface Potential ◽  
Pathogenic Bacteria ◽  
Field Effect Transistors ◽  
Potentiometric Sensor ◽  
Isothermal Amplification ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
High Signal

A disposable potentiometric sensor was newly developed for the amplification-coupled detection of nucleic acids. The hydrogen-ion is generally released during isothermal amplification of nucleic acids. The surface potential on the oxide-functionalized electrode of the extended gate was directly measured using full electrical circuits with the commercial metal-oxide semiconductor field-effect transistors (MOSFETs) and ring oscillator components, which resulted in cost-effective, portable and scalable real-time nucleic acid analysis. The current-starved ring oscillator changes surface potential to its frequency depending on the square of the variation in pH with a high signal-to-noise ratio during isothermal amplification. The device achieves a conversion rate of 20.5 kHz/mV and a detection resolution of 200 µV for the surface potential. It is demonstrated that the sensor successfully monitors in real-time isothermal amplification of the extracted nucleic acids from Salmonella pathogenic bacteria. The in situ variations in the frequency of the pH-sensitive sensor were compared with the results of both a conventional optical device and pH-meter during isothermal amplification.

Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

2009 ◽  
Vol 48 (4) ◽  
pp. 04C036 ◽  
Author(s):  
San-Lein Wu ◽  
Chung Yi Wu ◽  
Hau-Yu Lin ◽  
Cheng-Wen Kuo ◽  
Shin-Hsin Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Flicker Noise ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type ◽  
Strained Sige

scholarly journals Design and Analysis of Logic Gates using GaN based Double Gate MOSFET (DG-MOS)

2018 ◽  
Vol 17 (1) ◽  
Author(s):  
Md Ibnul Bin Kader Arnub ◽  
M Tanseer Ali
Keyword(s):  
Field Effect Transistors ◽  
Logic Gates ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Channel One ◽  
Turn On ◽  
Double Gate Mosfet ◽  
Different Types

The double gate MOSFET, where two gates are fabricated along the length of the channel one after another. Design of logic gates is one of the most eminent application of Double Gate MOSFET. Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are shown to be promising for digital logic applications. This paper describes the design and analysis of different types of logic gates using GaN based DG-MOSFET. The gate length (LG) is kept constant at 10.6 nm. The gate voltage varies from 0 to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (ION) and OFF-state current (IOFF) are found 8.11×10-3 and 6.38605×10-9A/μm respectively. The leakage current is low for the device with HfO2 as compared to that for the device with ZrO2. The subthreshold swing (SS) is 68.7408 mV/dec for the device with HfO2.

Hole Trapping in the NBTI Characteristic of SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 667-670
Author(s):  
Yan Jing He ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Meng Zhang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Hole Trapping ◽  
Primary Mechanism ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
P Type

P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacitance-voltage (CV) measurements with different starting voltages. The negative shift voltage ∆Vshift and the hysteresis voltages ∆VH which caused by the hole traps in the MOSCAPs and MOSFETs are extracted from CV results. The results show that the hole traps extracted from MOSCAPs are larger than the that extracted from the threshold voltage shift in the MOSFETs. It suggests holes trapping are the primary mechanism contributing to the NBTI, but not all the holes work. Part of the hole traps are compensation by sufficient electrons in the MOSFET structure.

Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

2001 ◽  
Vol 79 (20) ◽  
pp. 3344-3346 ◽  
Author(s):  
Minjoo L. Lee ◽  
C. W. Leitz ◽  
Z. Cheng ◽  
A. J. Pitera ◽  
T. Langdo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type
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