Nanoindentation and TEM to Study the Cavity Fate after Post-Irradiation Annealing of He Implanted EUROFER97 and EU-ODS EUROFER

The effect of post-helium irradiation annealing on bubbles and nanoindentation hardness of two reduced activation ferritic martensitic steels for nuclear fusion applications (EUROFER97 and EU-ODS EUROFER) has been studied. Helium-irradiated EUROFER97 and EU-ODS EUROFER were annealed at 450 °C for 100 h in an argon atmosphere. The samples were tested by nanoindentation and studied by transmission electron microscopy extracting some focused ion beam lamellae containing the whole implanted zone (≈50 µm). A substantial increment in nanoindentation hardness was measured in the area with higher helium content, which was larger in the case of EUROFER97 than in EU-ODS EUROFER. In terms of microstructure defects, while EU-ODS EUROFER showed larger helium bubbles, EUROFER97 experienced the formation of a great population density of them, which means that the mechanism that condition the evolution of cavities for these two materials are different and completely dependent on the microstructure.

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Nanostructures from Hydrogen and Helium Implantation of Aluminum

MRS Proceedings ◽

10.1557/proc-1264-bb03-05 ◽

2010 ◽

Vol 1264 ◽

Cited By ~ 1

Author(s):

Markus D. Ong ◽

Nancy Yang ◽

Ryan J. Depuit ◽

Bruce R. McWatters ◽

Rion A. Causey

Keyword(s):

Electron Microscopy ◽

Focused Ion Beam ◽

Ion Beam ◽

High Mobility ◽

Transmission Electron ◽

Helium Ion ◽

Fusion Applications ◽

Helium Implantation ◽

Bicontinuous Structure ◽

Nanoporous Structures

AbstractThis study investigates a pathway to nanoporous structures created by hydrogen and helium implantation in aluminum. Previous experiments for fusion applications have indicated that hydrogen and helium ion implantations are capable of producing bicontinuous nanoporous structures in a variety of metals. This study focuses specifically on implantations of hydrogen and helium ions at 25 keV in aluminum. The hydrogen and helium systems result in remarkably different nanostructures of aluminum at the surface. Scanning electron microscopy, focused ion beam, and transmission electron microscopy show that both implantations result in porosity that persists approximately 200 nm deep. However, hydrogen implantations tend to produce larger and more irregular voids that preferentially reside at defects. Implantations of helium at a fluence of 1018 cm-2 produce much smaller porosity on the order of 10 nm that is regular and creates a bicontinuous structure in the porous region. The primary difference driving the formation of the contrasting structures is likely the relatively high mobility of hydrogen and the ability of hydrogen to form alanes that are capable of desorbing and etching Al (111) faces.

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TEM Sample Preparation Tricks for Advanced DRAMs

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0318 ◽

2015 ◽

Author(s):

Ching Shan Sung ◽

Hsiu Ting Lee ◽

Jian Shing Luo

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Tem Analysis ◽

Cross Sectional ◽

Transmission Electron ◽

Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0473 ◽

2017 ◽

Author(s):

H.J. Ryu ◽

A.B. Shah ◽

Y. Wang ◽

W.-H. Chuang ◽

T. Tong

Keyword(s):

Electron Microscopy ◽

Electron Beam ◽

Focused Ion Beam ◽

Current Flow ◽

Ion Beam ◽

The Body ◽

Complete Understanding ◽

Root Cause ◽

Transmission Electron ◽

Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

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Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0237 ◽

1997 ◽

Author(s):

K. Doong ◽

J.-M. Fu ◽

Y.-C. Huang

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor ◽

Specimen Preparation ◽

Preparation Technique ◽

Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0313 ◽

2002 ◽

Author(s):

Chin Kai Liu ◽

Chi Jen. Chen ◽

Jeh Yan.Chiou ◽

David Su

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Specimen Preparation ◽

Tem Analysis ◽

Sensitive Issue ◽

Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0321 ◽

1997 ◽

Author(s):

J. Douglass ◽

T. D. Myers ◽

F. Tsai ◽

R. Ketcheson ◽

J. Errett

Keyword(s):

Electron Microscopy ◽

Cross Section ◽

Focused Ion Beam ◽

Yield Loss ◽

Process Analysis ◽

Ion Beam ◽

Yield Improvement ◽

Transmission Electron ◽

Defect Mechanism ◽

Water Residue

Abstract This paper describes how the authors used a combination of focused ion beam (FIB) microprobing, transmission electron microscopy (TEM), and data and process analysis to determine that localized water residue was causing a 6% yield loss at die sort.

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