Impedance Spectroscopy Analysis of PbSe Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Approach

This research endeavor aimed to synthesize the lead (II) diphenyldiselenophosphinate complex and its use to obtain lead selenide nanostructured depositions and further the impedance spectroscopic analysis of these obtained PbSe nanostructures, to determine their roles in the electronics industry. The aerosol-assisted chemical vapor deposition technique was used to provide lead selenide deposition by decomposition of the complex at different temperatures using the glass substrates. The obtained films were revealed to be a pure cubic phase PbSe, as confirmed by X-ray diffraction analysis. SEM and TEM micrographs demonstrated three-dimensionally grown interlocked or aggregated nanocubes of the obtained PbSe. Characteristic dielectric measurements and the impedance spectroscopy analysis at room temperature were executed to evaluate PbSe properties over the frequency range of 100 Hz–5 MHz. The dielectric constant and dielectric loss gave similar trends, along with altering frequency, which was well explained by the Koops theory and Maxwell–Wagner theory. The effective short-range translational carrier hopping gave rise to an overdue remarkable increase in ac conductivity (σac) on the frequency increase. Fitting of a complex impedance plot was carried out with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb), which proved that grains, as well as grain boundaries, are responsible for the relaxation processes. The asymmetric depressed semicircle with the center lower to the impedance real axis provided a clear explanation of non-Debye dielectric behavior.

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Impedance Spectroscopic Study of Nickel Sulfide Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Technique

Nanomaterials ◽

10.3390/nano11051105 ◽

2021 ◽

Vol 11 (5) ◽

pp. 1105

Author(s):

Sadia Iram ◽

Azhar Mahmood ◽

Muhammad Fahad Ehsan ◽

Asad Mumtaz ◽

Manzar Sohail ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Nickel Sulfide ◽

Variable Temperature ◽

Complex Impedance ◽

Equivalent Circuit Model ◽

Chemical Vapor ◽

Relaxation Processes ◽

Impedance Plot ◽

Vapor Deposition Technique

This research aims to synthesize the Bis(di-isobutyldithiophosphinato) nickel (II) complex [Ni(iBu2PS2)] to be employed as a substrate for the deposition of nickel sulfide nanostructures, and to investigate its dielectric and impedance characteristics for applications in the electronic industry. Various analytical tools including elemental analysis, mass spectrometry, IR, and TGA were also used to further confirm the successful synthesis of the precursor. NiS nanostructures were grown on the glass substrates by employing an aerosol assisted chemical vapor deposition (AACVD) technique via successful decomposition of the synthesized complex under variable temperature conditions. XRD, SEM, TEM, and EDX methods were well applied to examine resultant nanostructures. Dielectric studies of NiS were carried out at room temperature within the 100 Hz to 5 MHz frequency range. Maxwell-Wagner model gave a complete explanation of the variation of dielectric properties along with frequency. The reason behind high dielectric constant values at low frequency was further endorsed by Koops phenomenological model. The efficient translational hopping and futile reorientation vibration caused the overdue exceptional drift of ac conductivity (σac) along with the rise in frequency. Two relaxation processes caused by grains and grain boundaries were identified from the fitting of a complex impedance plot with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb). Asymmetry and depression in the semicircle having center present lower than the impedance real axis gave solid justification of dielectric behavior that is non-Debye in nature.

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Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽

10.3390/cryst10040237 ◽

2020 ◽

Vol 10 (4) ◽

pp. 237

Author(s):

M. Abul Hossion ◽

B. M. Arora

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Silicon Film ◽

Chemical Vapor ◽

Hot Wire ◽

Deposition Technique ◽

Boron Doped ◽

Vapor Deposition Technique ◽

Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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