scholarly journals Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3378
Author(s):  
Mahdi Asgari ◽  
Leonardo Viti ◽  
Valentina Zannier ◽  
Lucia Sorba ◽  
Miriam Serena Vitiello
Keyword(s):  
Room Temperature ◽  
Field Effect Transistors ◽  
Far Infrared ◽  
Detection Mechanism ◽  
Semiconductor Nanowire ◽  
Electrostatic Gating ◽  
Inas Nanowires ◽  
Quantum Science ◽  
On Chip ◽  
Infrared Frequencies

Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1–10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process and quality control. Here, we exploited InAs nanowires (NWs) to engineer antenna-coupled THz photodetectors that operated as efficient bolometers or photo thermoelectric receivers at room temperature. We controlled the core detection mechanism by design, through the different architectures of an on-chip resonant antenna, or dynamically, by varying the NW carrier density through electrostatic gating. Noise equivalent powers as low as 670 pWHz−1/2 with 1 µs response time at 2.8 THz were reached.

Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors

Nano Letters ◽  
2011 ◽  
Vol 12 (1) ◽  
pp. 96-101 ◽  
Author(s):  
Miriam S. Vitiello ◽  
Dominique Coquillat ◽  
Leonardo Viti ◽  
Daniele Ercolani ◽  
Frederic Teppe ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Terahertz Detectors ◽  
Semiconductor Nanowire

scholarly journals Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

Nanophotonics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 89-98 ◽  
Author(s):  
Leonardo Viti ◽  
Alisson R. Cadore ◽  
Xinxin Yang ◽  
Andrei Vorobiev ◽  
Jakob E. Muench ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Coherent Control ◽  
Response Times ◽  
Field Effect Transistors ◽  
High Sensitivity ◽  
Far Infrared ◽  
Noise Equivalent Power ◽  
Thz Spectroscopy ◽  
Time Resolved

AbstractUltrafast and sensitive (noise equivalent power <1 nW Hz−1/2) light-detection in the terahertz (THz) frequency range (0.1–10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (∼100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power ≤120 pW Hz−1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1–10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications.

Room temperature terahertz detectors based on semiconductor nanowire field effect transistors

2012 ◽  
Author(s):  
Miriam S. Vitiello ◽  
Dominique Coquillat ◽  
Leonardo Viti ◽  
Daniele Ercolani ◽  
Frederic Teppe ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Terahertz Detectors ◽  
Semiconductor Nanowire

scholarly journals High-Pressure Spectroscopy Study of Zn(IO3)2 Using Far-Infrared Synchrotron Radiation

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 34
Author(s):  
Akun Liang ◽  
Robin Turnbull ◽  
Enrico Bandiello ◽  
Ibraheem Yousef ◽  
Catalin Popescu ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transitions ◽  
Synchrotron Radiation ◽  
Infrared Radiation ◽  
Room Temperature ◽  
Far Infrared ◽  
Low Pressure ◽  
Pressure Response ◽  
Spectroscopy Study ◽  
Far Infrared Radiation

We report the first high-pressure spectroscopy study on Zn(IO3)2 using synchrotron far-infrared radiation. Spectroscopy was conducted up to pressures of 17 GPa at room temperature. Twenty-five phonons were identified below 600 cm−1 for the initial monoclinic low-pressure polymorph of Zn(IO3)2. The pressure response of the modes with wavenumbers above 150 cm−1 has been characterized, with modes exhibiting non-linear responses and frequency discontinuities that have been proposed to be related to the existence of phase transitions. Analysis of the high-pressure spectra acquired on compression indicates that Zn(IO3)2 undergoes subtle phase transitions around 3 and 8 GPa, followed by a more drastic transition around 13 GPa.

scholarly journals Roadmap of Terahertz Imaging 2021

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4092
Author(s):  
Gintaras Valušis ◽  
Alvydas Lisauskas ◽  
Hui Yuan ◽  
Wojciech Knap ◽  
Hartmut G. Roskos
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Computational Imaging ◽  
Imaging Systems ◽  
Thz Imaging ◽  
Operational Conditions ◽  
Frequency Combs ◽  
Wave Imaging ◽  
On Chip ◽  
Nano Imaging

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

First in-beam application of thallium bromide semiconductor detectors to particle-induced X-ray emission

2019 ◽  
Vol 29 (01n02) ◽  
pp. 53-59
Author(s):  
M. Nogami ◽  
K. Hitomi ◽  
A. Terakawa ◽  
K. Ishii
Keyword(s):  
Room Temperature ◽  
Semiconductor Detectors ◽  
Science Center ◽  
Active Volume ◽  
X Ray ◽  
Thallium Bromide ◽  
Quantum Science ◽  
First Time ◽  
Aomori Prefecture ◽  
Zone Purification

For the first time, particle-induced X-ray emission (PIXE) spectra were obtained using TlBr detectors. The TlBr detector was fabricated from a crystal grown with material purified by the zone purification. Its active volume was 1.5 mm × 1.5 mm × 3.1 mm, and it exhibited an energy resolution of a 6.2 keV full-width at half-maximum (FWHM) for 59.5 keV at room temperature. The detector was installed into a PIXE system at Aomori Prefecture Quantum Science Center. A Pb plate target in the PIXE chamber was irradiated with a 20 MeV proton beam, and X-ray peaks for Pb K[Formula: see text] and K[Formula: see text] were successfully detected by the TlBr detector at room temperature.

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

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