scholarly journals Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3755 ◽  
Author(s):  
Mariano Gioffré ◽  
Giuseppe Coppola ◽  
Mario Iodice ◽  
Maurizio Casalino
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Reverse Bias ◽  
Near Infrared ◽  
Optical Measurements ◽  
Device Performance ◽  
Light Sources ◽  
Monolithically Integrated ◽  
Fabrication And Characterization

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm.

scholarly journals Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

2018 ◽  
Author(s):  
Mariano Gioffrè ◽  
Giuseppe Coppola ◽  
Mario Iodice ◽  
Maurizio Casalino
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Reverse Bias ◽  
Near Infrared ◽  
Optical Measurements ◽  
Device Performance ◽  
Light Sources ◽  
Monolithically Integrated ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.

scholarly journals Near-Infrared All-Silicon Photodetectors

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
M. Casalino ◽  
G. Coppola ◽  
M. Iodice ◽  
I. Rendina ◽  
L. Sirleto
Keyword(s):  
Reverse Bias ◽  
Near Infrared ◽  
Free Spectral Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Integrated Devices ◽  
Fabry Perot ◽  
Fabrication And Characterization ◽  
Cavity Effect

We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.

scholarly journals Assessing the Stability of Surface Lights for use in Retrievals of Nocturnal Atmospheric Parameters

2019 ◽  
Author(s):  
Jeremy E. Solbrig ◽  
Steven D. Miller ◽  
Jianglong Zhang ◽  
Lewis Grasso ◽  
Anton Kliewer
Keyword(s):  
Near Infrared ◽  
Correlation Coefficients ◽  
Visible Spectrum ◽  
Light Sources ◽  
Infrared Observations ◽  
Spatially Resolved ◽  
Relative Standard ◽  
Geometric Variables ◽  
The Stability

Abstract. Detection and characterization of aerosols is inherently limited at night due to a lack of sensitivity—information typically provided by visible spectrum observations. The VIIRS Day/Night Band (DNB) onboard the Suomi-NPP satellite is a first-of-its-kind calibrated sensor capable of collecting visible/near-infrared observations during both day and night. Multiple studies have suggested that anthropogenic light emissions such as those from cities and gas flares may be useable as light sources for retrieval of atmospheric properties including cloud and aerosol optical depth. However, their use in this capacity requires proper characterization of their intrinsic variation, which represents a source of retrieval uncertainty. In this study we use 18 months of cloud-cleared VIIRS data collected over five selected geographic domains to assess the stability of anthropogenic light emissions and their response to varied satellite and lunar geometries. Timeseries are developed for each location in each domain for DNB radiance, four infrared channels, and satellite and lunar geometric variables, and spatially-resolved correlation coefficients are computed between DNB radiance and each of the other variables. This analysis finds that while many emissive light sources are too unstable to be used reliably for atmospheric retrievals, some sources exhibit a sufficient stability (relative standard deviation

Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

scholarly journals Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2800 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
Cho-Chun Chiang ◽  
Chi-Jen Teng ◽  
Chia-Chun Yu ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Modulation Frequency ◽  
Dynamic Performance ◽  
Epitaxial Structure ◽  
Data Rates ◽  
Conductive Substrate ◽  
Fabrication And Characterization ◽  
Electric Field Profile

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Fabrication and Characterization of Aramid/Aerogel Composite

2015 ◽  
Vol 1096 ◽  
pp. 435-440
Author(s):  
Li Rong Yao ◽  
Juan Ren ◽  
Shan Qing Xu
Keyword(s):  
Room Temperature ◽  
Solvent System ◽  
Short Fiber ◽  
Thermal Bonding ◽  
Aerogel Composite ◽  
Fabrication And Characterization ◽  
High Shearing ◽  
Good Heat ◽  
Weight Proportion

The LiCl/DMAc was used as solvent system to dissolve meta-aramid short fiber, the aramid fibrid was prepared by injecting the aramid solution into the high shearing coagulant at room temperature and the mixture of water and N, N-dimethylacetamide (DMAc) was used as coagulant. The aramid fibrid and aramid short fiber were mixed at differents weight proportion, wet paper was dried and aramid paper was prepared by heat pressing. The aramid paper has excellent mechanical properties when the weight proportion of the aramid fibrid and aramid short fiber was 60:40,and it had a good thermal bonding between the fibrid and fiber under heat pressing. The hydrophobic SiO2 was mixed with aramid fibrid and aramid short fiber (60:40) in ethanol, and aramid/aerogel composite was prepared by drying and hot compressing. The composite had a good heat-resisting, however, the mechanical property decreased with the content of aerogel increasing.

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