scholarly journals The Development of CMOS Amperometric Sensing Chip with a Novel 3-Dimensional TiN Nano-Electrode Array

Sensors ◽  
2019 ◽  
Vol 19 (5) ◽  
pp. 994 ◽  
Author(s):  
Chun-Lung Lien ◽  
Chiun-Jye Yuan
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Electrode Array ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Electrochemical Sensing ◽  
Oxide Semiconductor ◽  
High Catalytic Activity ◽  
Detection Range ◽  
3 Dimensional

An electrochemical sensing chip with an 8 × 8 array of titanium nitride three-dimensional nano-electrodes (TiN 3D-NEA) was designed and fabricated via a standard integrated complementary metal oxide semiconductor process. Each nano-electrode in 3D-NEA exhibited a pole-like structure with a radius of 100 nm and a height of 35 nm. The numeric simulation showed that the nano-electrode with a radius of around 100 nm exhibited a more uniformly distributed electric field and a much higher electric field magnitude compared to that of the microelectrode. Cyclic voltammetry study with Ru(NH3)63+ also revealed that the TiN 3D-NEA exhibited a much higher current density than that obtained from the microelectrode by two orders of magnitude. Further studies showed that the electrocatalytical reduction of hydrogen peroxide (H2O2) could occur on a TiN 3D-NEA-based sensing chip with a high sensitivity of 667.2 mA⋅mM−1⋅cm−2. The linear detection range for H2O2 was between 0.1 μM and 5 mM with a lowest detection limit of 0.1 μM. These results indicated that the fabricated TiN 3D-NEA exhibited high catalytic activity and sensitivity to H2O2 and could be a promising sensor for H2O2 measurement.

Preparation of yolk–shell structured Ag@Cu particles and their application in high performance electrochemical sensing of p-aminobenzoic acid

2019 ◽  
Vol 97 (2) ◽  
pp. 140-146
Author(s):  
Tian Gan ◽  
Zhikai Wang ◽  
Mengru Chen ◽  
Wanqiu Fu ◽  
Haibo Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Performance ◽  
Electrochemical Impedance ◽  
High Sensitivity ◽  
Differential Pulse ◽  
Electrochemical Sensing ◽  
High Catalytic Activity ◽  
Aminobenzoic Acid ◽  
Transmission Electron

In this work, the Ag@Cu particles with yolk–shell nanostructure was prepared by facile solvothermal method, which was modified on glassy carbon electrode (GCE) to fabricate electrochemical sensor for the convenient and fast determination of p-aminobenzoic acid (PABA). The surface morphology and electrochemical properties of the as-prepared Ag@Cu nanocomposite modified electrode were characterized by scanning electron microscopy, transmission electron microscopy, chronocoulometry, and electrochemical impedance spectroscopy. Further, the electrochemical sensing of PABA was performed on the Ag@Cu/GCE using cyclic voltammetry and differential pulse voltammetry techniques, showing high catalytic activity. Under the optimal conditions, the sensor exhibited a wide linear range, high sensitivity, and low detection limit of 0.315 μmol/L for PABA. The developed sensor was also successfully applied for PABA detection in anesthetic and cosmetics with satisfactory results.

scholarly journals Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Nanophotonics ◽  
2017 ◽  
Vol 6 (6) ◽  
pp. 1343-1352 ◽  
Author(s):  
Chuantong Cheng ◽  
Beiju Huang ◽  
Xurui Mao ◽  
Zanyun Zhang ◽  
Zan Zhang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Low Cost ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Optical Signal ◽  
Optical Interconnect ◽  
Optical Receiver ◽  
Oxide Semiconductor ◽  
Experimental Realization ◽  
Operation Speed

AbstractOptical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

MRS Bulletin ◽  
2009 ◽  
Vol 34 (9) ◽  
pp. 658-664 ◽  
Author(s):  
P. Muralt ◽  
R. G. Polcawich ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Microelectromechanical Systems ◽  
Low Voltage ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Devices ◽  
Si Substrates ◽  
The Impact

AbstractPiezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.

High Sensitivity Dynamic Range Enhanced Complementary Metal–Oxide–Semiconductor Imager with Noise Suppression

2008 ◽  
Vol 47 (4) ◽  
pp. 2761-2766
Author(s):  
Satoru Adachi ◽  
Woonghee Lee ◽  
Nana Akahane ◽  
Hiromichi Oshikubo ◽  
Koichi Mizobuchi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Noise Suppression ◽  
Dynamic Range ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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