scholarly journals Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Nanophotonics ◽  
2017 ◽  
Vol 6 (6) ◽  
pp. 1343-1352 ◽  
Author(s):  
Chuantong Cheng ◽  
Beiju Huang ◽  
Xurui Mao ◽  
Zanyun Zhang ◽  
Zan Zhang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Low Cost ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Optical Signal ◽  
Optical Interconnect ◽  
Optical Receiver ◽  
Oxide Semiconductor ◽  
Experimental Realization ◽  
Operation Speed

AbstractOptical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

scholarly journals A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 65
Author(s):  
Wenhao Zhi ◽  
Qingxiao Quan ◽  
Pingping Yu ◽  
Yanfeng Jiang
Keyword(s):  
Optical Communication ◽  
Integrated Circuit ◽  
Communication Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Avalanche Photodiode ◽  
Cmos Technology ◽  
Optical Signal ◽  
Oxide Semiconductor ◽  
Monolithically Integrated ◽  
Process Modification

Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compatible with Taiwan Semiconductor Manufacturing Company (TSMC) 45-nm standard complementary metal–oxide–semiconductor (CMOS) technology without any process modification. The APD based on 45 nm process is beneficial to realize a smaller and more complex monolithically integrated optoelectronic chip. The fabricated CMOS APD operates at 850 nm wavelength optical communication. Its bandwidth can be as high as 8.4 GHz with 0.56 A/W responsivity at reverse bias of 20.8 V. Its active area is designed to be 20 × 20 μm2. The Simulation Program with Integrated Circuit Emphasis (SPICE) model of the APD is also proposed and verified. The key parameters are extracted based on its electrical, optical and frequency responses by parameter fitting. The device has wide potential application for optical communication systems.

scholarly journals Low-Cost Microbolometer Type Infrared Detectors

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 800
Author(s):  
Le Yu ◽  
Yaozu Guo ◽  
Haoyu Zhu ◽  
Mingcheng Luo ◽  
Ping Han ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Focal Plane ◽  
Technological Development ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Micro Electro Mechanical System ◽  
Focal Plane Arrays ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Cmos Compatible

The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. The fabrication of the CMOS-compatible microbolometer infrared focal plane arrays (IRFPAs) is based on the combination of the standard CMOS process and simple post-CMOS micro-electro-mechanical system (MEMS) process. With the technological development, the performance of the commercialized CMOS-compatible microbolometers shows only a small gap with that of the mainstream ones. This paper reviews the basics and recent advances of the CMOS-compatible microbolometer IRFPAs in the aspects of the pixel structure, the read-out integrated circuit (ROIC), the focal plane array, and the vacuum packaging.

Microtexture Road Profiling System Using Photometric Stereo

2015 ◽  
Vol 43 (2) ◽  
pp. 117-143 ◽  
Author(s):  
Boren Li ◽  
Tomonari Furukawa
Keyword(s):  
Low Cost ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Photometric Stereo ◽  
Oxide Semiconductor ◽  
Surface Patch ◽  
Forming Process ◽  
Texture Surface ◽  
Light Emitting ◽  
Parametric Studies

ABSTRACT This paper presents the design and development of a stationary microtexture road profiling system using the photometric stereo (PS) technique. The structure of the developed system is simple, mainly consisting of a digital single-lens reflex (DSLR) camera with a macro lens and multiple light-emitting diodes (LEDs). The camera with the lens is oriented perpendicularly to the pavement texture and takes images each with a different LED turned on at a time. With the pavement texture images with diverse shadings, the PS technique is applied by inverting the image-forming process locally (pixel-wise) to associate the measured image intensities with the known lighting directions to estimate the gradients for each pixel-corresponding surface patch of the pavement texture. Surface normal integration (SNI) is then employed to reconstruct the three-dimensional (3D) road surface in the microtexture scale. The PS-based system has several intrinsic advantages. First, it could achieve high accuracy for surfaces with most diffuse reflection. Second, the measurement speed is fast because of its area-scanning nature. Third, the spatial resolution is high because of the usage of a high-resolution complementary metal-oxide semiconductor DSLR camera. In addition, it can be less sensitive to effects from specularities and shadows compared with most optical-based methods, since images captured under diverse lighting directions in PS provide more cues for detection purposes. Last but not least, the hardware of the system can be made compact at low cost because of its simple structure and can be adapted for direct measurement on the pavement. Parametric studies for the Lambertian-based PS technique were first investigated analytically and numerically, and these investigations yielded the design of the system having eight LEDs with the same zenith angle of 30 degrees and uniformly distributed azimuth angles in 360 degrees. Several experimental results on various types of surfaces have demonstrated that the developed system could achieve the accuracy in the order of 10 microns.

scholarly journals Integrated silicon carbide modulator for CMOS photonics

2021 ◽  
Author(s):  
Keith Powell ◽  
Liwei Li ◽  
Amirhassan Shams-Ansari ◽  
Jianfu Wang ◽  
Debin Meng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Communication Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Optical Signal ◽  
Oxide Semiconductor ◽  
Photon Absorption ◽  
Stable Operation ◽  
Pockels Effect ◽  
Long Distance ◽  
Optical Carrier

Abstract The electro-optic modulator encodes electrical signals onto an optical carrier, and is essential for the operation of global communication systems and data centers that society demands. An ideal modulator results from scalable semiconductor fabrication and is integrable with electronics. Accordingly, it is compatible with complementary metal-oxide-semiconductor (CMOS) fabrication processes. Moreover, modulators using the Pockels effect enables low loss, ultrafast, and wide-bandwidth data transmission. Although strained silicon-based modulators could satisfy these criteria, fundamental limitations such as two-photon absorption, poor thermal stability and a narrow transparency window hinder their performance. On the other hand, as a wide bandgap semiconductor material, silicon carbide is CMOS compatible and does not suffer from these limitations. Due to its combination of color centers, high breakdown voltage, and strong thermal conductivity, silicon carbide is a promising material for CMOS electronics and photonics with applications ranging from sensors to quantum and nonlinear photonics. Importantly, silicon carbide exhibits the Pockels effect, but a modulator has not been realized since the discovery of this effect more than three decades ago. Here we design, fabricate, and demonstrate the first Pockels modulator in silicon carbide. Specifically, we realize a waveguide-integrated, small form-factor, gigahertz-bandwidth modulator that can operate using CMOS-level drive voltages on a thin film of silicon carbide on insulator. Furthermore, the device features no signal degradation and stable operation at high optical intensities (913 kW/mm2), allowing for high optical signal-to-noise ratios for long distance communications. Our work unites Pockels electro-optics with a CMOS platform to pave the way for foundry-compatible integrated photonics.

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

scholarly journals Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation

2017 ◽  
pp. 11-16
Author(s):  
Widianto Widianto ◽  
Lailis Syafaah ◽  
Nurhadi Nurhadi
Keyword(s):  
Monte Carlo ◽  
Integrated Circuit ◽  
High Speed ◽  
Evaluation Method ◽  
Complementary Metal Oxide Semiconductor ◽  
Process Variations ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spice Simulation ◽  
Simulation Results

In this paper, effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it. 

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3610
Author(s):  
Adrián J. Torregrosa ◽  
Emir Karamehmedović ◽  
Haroldo Maestre ◽  
María Luisa Rico ◽  
Juan Capmany
Keyword(s):  
Optical Communications ◽  
Near Infrared ◽  
Nonlinear Crystal ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Infrared Image ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Oxide Semiconductor ◽  
Free Space Optical

Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

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