Tin monosulfide (SnS) epitaxial films grown by RF magnetron sputtering and sulfurization on MgO(100) substrates

2021 ◽  
Author(s):  
Kota Takisawa ◽  
Mutsumi Sugiyama
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Magnetron Sputtering ◽  
Carrier Transport ◽  
Rotational Symmetry ◽  
Rf Magnetron Sputtering ◽  
Epitaxial Films ◽  
Level Energy ◽  
Cross Sectional ◽  
Before And After

Abstract The crystallographic and electrical properties of tin monosulfide (SnS) epitaxial thin films grown by RF magnetron sputtering and sulfurization were investigated. The SnS(040)-oriented films were grown on an MgO(100) substrate. Two types of four-fold rotational symmetrical in-plane orientations, offset by 45° from each other, were observed using X-ray diffraction. The rotational symmetry was also observed using cross-sectional transmission electron microscopy. The electrical properties of the SnS films were controlled by varying the sulfurization temperature, and the carrier transport of all the SnS epitaxial films was mainly limited by grain boundary scattering. The activation energies of the carrier concentration before and after sulfurization of the films were estimated to be approximately 0.26 ± 0.02 eV and 0.20 ± 0.01 eV, respectively, based on temperature-dependent Hall measurements. These values mainly correspond to the acceptor level energy of Sn vacancy with a high/low potential barrier height around the grain boundary.

Electrical Properties of ZrO2 Capacitor Dielectrics Deposited by rf Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 13-16
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Anna Park ◽  
Ho Jin Kim
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
Interface Trap Density ◽  
Dielectric Thin Films

The structure and electrical properties of ZrO2 dielectric thin films deposited by rf magnetron sputtering were investigated. The fixed oxide charge and interface trap density at the ZrO2/Si interface is substantially decreased by annealing at 500 C. Annealing treatment also enhances the quality of the film by reducing leakage current. The carrier transport mechanism in the ZrO2 film is dominated by thermionic emission.

SUPERCONDUCTING PROPERTIES OF BSCCO (2223) ULTRATHIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1757-1760
Author(s):  
L. NAVARRETE ◽  
A. MARIÑO ◽  
H. SÁNCHEZ
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Structural Characterization ◽  
Ultrathin Films ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Thermal Treatments ◽  
Superconducting Properties

Ultrathin films of (Bi–Pb)–Sr–Ca–Cu–O (2223) were produced by ex situ RF magnetron sputtering on MgO (100) substrates. Films with different thermal treatments and thickness varying between 30 nm and 300 nm were obtained and studied systematically. A structural characterization of these samples was carried out and correlated with their electrical properties and thickness.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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