Plan-view TEM observation of a single-domain κ-Ga2O3 thin film grown on ε-GaFeO3 substrate using GaCl3 precursor by mist chemical vapor deposition
Keyword(s):
Abstract We demonstrated the growth of a single-domain κ-Ga2O3 thin film on ε-GaFeO3 by using an organic-free compound as a precursor for mist chemical vapor deposition. X-ray diffraction analysis revealed that an 87-nm-thick κ-Ga2O3 thin film was grown almost coherently with slight lattice relaxation. The surface morphology of the κ-Ga2O3 thin film exhibited a step-terrace structure without island growth. Furthermore, plan-view TEM observations revealed that the κ-Ga2O3 thin film grown on ε-GaFeO3 had a single domain, whereas the previously reported κ-Ga2O3 thin film grown on AlN template had a domain structure.
1989 ◽
Vol 47
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pp. 608-609
2010 ◽
Vol 157
(12)
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pp. H1110
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Keyword(s):
2012 ◽
Vol 455-456
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pp. 935-938