scholarly journals Phase Noise Reduction Technique for ISM Band LC Oscillator Using Tail Current

2021 ◽  
Vol 12 ◽  
pp. 116-124
Author(s):  
Kruti Thakore ◽  
D. J. Shah ◽  
N. M. Devashrey
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Ieee 802.15.4 ◽  
Frequency Tuning ◽  
Cmos Technology ◽  
Total Power ◽  
Voltage Controlled Oscillator ◽  
Ism Band ◽  
Lc Oscillator ◽  
Total Power Consumption

This paper presents low phase noise, precise frequency tuning range LC Voltage controlled Oscillator (VCO) circuit of Phase lock loop, to support - IEEE 802.11a/b/g, Bluetooth, Zigbee and IEEE 802.15.4., operating on 2.4GHz ISM band (Industrial, Scientific, Medical). The presented circuit is implemented in Cadence virtuoso environment and using GPDK090 Library of 90nm CMOS Technology. The presented VCO is tuned at 2.4GHz frequency with tuning range of 80MHz. The measured Phase noise is -126.3dBc/Hz at 1MHz offset frequency. The total power consumption of the presented VCO is 4.7mw at 1V power supply.

scholarly journals Dual Band Switchable Voltage Controlled Oscillator in 65-nm CMOS Technology

2020 ◽  
pp. 31-34
Keyword(s):  
Power Consumption ◽  
Tuning Range ◽  
Cmos Technology ◽  
Dual Band ◽  
Total Power ◽  
Voltage Controlled Oscillator ◽  
Dual Frequency ◽  
Chip Area ◽  
Total Power Consumption ◽  
Oscillation Frequencies

A switchable differential voltage-controlled oscillator (VCO) has been fabricated in 65nm CMOS. It is a dual frequency VCO whose oscillation frequencies can be changed from 40GHz (VCO1) to 80GHz (VCO2). The tuning range for VCO1 is 1GHz and for VCO2 is 4GHz. The inductor switching is attained with the help of transistor as a switch and inductors are fabricated in a stacked manner for saving die area. The output power of VCO1 is 1 dBm and for VCO2 is 0dBm with a total power consumption of 42mW. The phase noises were -94.62 dBc/Hz and -81.43 dBc/Hz at 1MHz offset for VCO1 and VCO2 respectively. The chip area is 500 x 560 um2 including probing pads.

scholarly journals A Ku-Band Fractional-N Frequency Synthesizer with Adaptive Loop Bandwidth Control

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 109
Author(s):  
Youming Zhang ◽  
Xusheng Tang ◽  
Zhennan Wei ◽  
Kaiye Bao ◽  
Nan Jiang
Keyword(s):  
Phase Noise ◽  
Frequency Synthesizer ◽  
Frequency Tuning ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Loop Filter ◽  
Chip Area ◽  
Loop Bandwidth ◽  
Bandwidth Control ◽  
Ku Band

This paper presents a Ku-band fractional-N frequency synthesizer with adaptive loop bandwidth control (ALBC) to speed up the lock settling process and meanwhile ensure better phase noise and spur performance. The theoretical analysis and circuits implementation are discussed in detail. Other key modules of the frequency synthesizer such as broadband voltage-controlled oscillator (VCO) with auto frequency calibration (AFC) and programable frequency divider/charge pump/loop filter are designed for integrity and flexible configuration. The proposed frequency synthesizer is fabricated in 0.13 μm CMOS technology occupying 1.14 × 1.18 mm2 area including ESD/IOs and pads, and the area of the ALBC is only 55 × 76 μm2. The out frequency can cover from 11.37 GHz to 14.8 GHz with a frequency tuning range (FTR) of 26.2%. The phase noise is −112.5 dBc/Hz @ 1 MHz and −122.4 dBc/Hz @ 3 MHz at 13 GHz carrier frequency. Thanks to the proposed ALBC, the lock-time can be shortened by about 30% from about 36 μs to 24 μs. The chip area and power consumption of the proposed ALBC technology are slight, but the beneficial effect is significant.

A VERY LOW NOISE WIDEBAND CLASS-C CMOS LC VCO

2012 ◽  
Vol 21 (04) ◽  
pp. 1250033 ◽  
Author(s):  
FATEMEH ATAEI ◽  
MOHAMMAD YAVARI
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Capacitor Bank ◽  
Cmos Technology ◽  
Low Noise ◽  
Voltage Controlled Oscillator ◽  
Switching Scheme ◽  
Wide Tuning Range ◽  
New Class ◽  
Class C

In this paper, a new class-C voltage-controlled oscillator (VCO) is presented. In the proposed VCO, the tail capacitor of the conventional class-C oscillator is dislocated from the source of the cross-coupled transistors to their gate to achieve a rail-to-rail output swing. This improves the phase noise by 2.9 dB compared to the conventional class-C one. Besides, a new switching scheme is presented in the switched capacitor bank used for coarse tuning of the proposed VCO to lower the on resistance of the switches as well as to reduce the parasitic capacitors. This wide tuning range class-C VCO is designed in a 0.18 μm CMOS technology. It achieves a -125.3 dBc/Hz phase noise at 1 MHz offset from a 2.2 GHz carrier frequency while covering a wide tuning range from 1.82 to 2.65 GHz and consuming 3.5 mW power from a single 0.9 V power supply.

A FULLY INTEGRATED MULTI-BAND LCVCO BASED ON CMOS TECHNOLOGY

2010 ◽  
Vol 19 (06) ◽  
pp. 1299-1305 ◽  
Author(s):  
XUEPO MA ◽  
WEI ZHANG ◽  
YANG LIU
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Low Frequency ◽  
Cmos Technology ◽  
Frequency Noise ◽  
Voltage Controlled Oscillator ◽  
Worst Case ◽  
Fully Integrated ◽  
Phase Noise Performance ◽  
Multi Band

In this paper, a cross-coupled complementary inductance–capacitance voltage controlled oscillator (LCVCO) with low phase noise and wide tuning range is presented. It has a multi-band topology and was fabricated with RF CMOS technology. For the purpose of lowering the K VCO and reducing the nonlinearities of varactors, the sizes of the varactors are set small. Also noise filtering technique is adopted to minimize up-conversion of the low frequency noise as well as down-conversion of the high frequency noise, thus the phase noise performance of the VCO is greatly improved. Simulation and experimental results indicate that the LCVCO displays a phase noise of -126.1 dBc at 900 kHz offset in worst case with a tuning range from 1.76 to 1.96 GHz.

scholarly journals A Design of Wide-Range and Low Phase Noise Linear Transconductance VCO with 193.76 dBc/Hz FoMT for mm-Wave 5G Transceivers

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 935 ◽  
Author(s):  
Arash Hejazi ◽  
YoungGun Pu ◽  
Kang-Yoon Lee
Keyword(s):  
Phase Noise ◽  
Carrier Frequency ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Switched Capacitor ◽  
Voltage Controlled Oscillator ◽  
Wide Range ◽  
Layout Area ◽  
Low Phase Noise

This paper presents a wide-range and low phase noise mm-Wave Voltage Controlled Oscillator (VCO) based on the transconductance linearization technique. The proposed technique eliminates the deep triode region of the active part of the VCO, and lowers the noise introduced by the gm-cell. The switch sizes inside the switched capacitor bank of the VCO are optimized to minimize the resistance of the switches while keeping the wide tuning range. A new layout technique shortens the routing of the VCO outputs, and lowers the parasitic inductance and resistance of the VCO routing. The presented method prevents the reduction of the quality factor of the tank due to the long routing. The proposed VCO achieves a discrete frequency tuning range, of 14 GHz to 18 GHz, through a linear coarse and middle switched capacitor array, and offers superior phase noise performance compared to recent state-of-the-art VCO architectures. The design is implemented in a 45 nm CMOS process and occupies a layout area (including output buffers) of 0.14 mm2. The power consumption of the VCO core is 24 mW from the power supply of 0.8 V. The post-layout simulation result shows the VCO achieves the phase noise performances of −87.2 dBc/Hz and −113 dBc/Hz, at 100 kHz and 1 MHz offset frequencies from the carrier frequency of 14 GHz, respectively. In an 18 GHz carrier frequency, the results are −87.4 dBc/Hz and −110 dBc/Hz, accordingly.

scholarly journals 60 GHz Front-End Components for Broadband Wireless Communication in 130 nm CMOS Technology

2016 ◽  
Vol 21 (1) ◽  
pp. 67-77
Author(s):  
Vasilis Kolios ◽  
Konstantinos Giannakidis ◽  
Grigorios Kalivas
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Total Power ◽  
Spectral Space ◽  
60 Ghz ◽  
Front End ◽  
Total Power Consumption ◽  
5 Ghz

Abstract The over 5 GHz available spectral space allocated worldwide around the 60 GHz band, is very promising for very high data rate wireless short-range communications. In this article we present two key components for the 60 GHz front-end of a transceiver, in 130 nm RF CMOS technology: a single-balanced mixer with high Conversion Gain (CG), reduced Noise Figure (NF) and low power consumption, and an LC cross-coupled Voltage Controlled Oscillator (VCO) with very good linearity, with respect to Vctrl, and very low Phase Noise (PN). In both circuits, custom designed inductors and a balun structure for the mixer are employed, in order to enhance their performance. The VCO’s inductor achieves an inductance of 198 pH and a quality factor (Q) of 30, at 30 GHz. The balun shows less than 1o Phase Imbalance (PI) and less than 0.2 dB Amplitude Imbalance (AI), from 57 to 66 GHz. The mixer shows a CG greater than 15 dB and a NF lower than 12 dB. In addition, the VCO achieves a Phase Noise lower than -106 dBc/Hz at 1 MHz offset, and shows great linearity for the entire band. Both circuits are biased with a 1.2 V supply voltage and the total power consumption is about 10.6 mW for the mixer and 10.92 mW for the VCO.

scholarly journals Design of Beyond Millimeter Wave Oscillator in 22nm Bulk CMOS technology

2019 ◽  
Vol 9 (1S3) ◽  
pp. 68-72
Keyword(s):  
Millimeter Wave ◽  
Tuning Range ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Frequency Range ◽  
Wave Regime ◽  
Oscillator Circuit ◽  
The Core ◽  
Lc Oscillator ◽  
Wave Oscillator

This paper presents the design of an LC oscillator using inductive feedback technique in bulk CMOS 22 nm technology using predictive technology models. The core oscillator is based on the popular Cherry Hooper amplifier topology. The development of the oscillator circuit from the standard Cherry Hooper topology is discussed in this paper with detailed analysis. The inductors are modelled by considering the various effects in this frequency range. The broadband technique used in the CH topology enables the circuit to oscillate at frequencies more than millimeter wave regime. By employing MOS varactors the designed oscillator was converted into a voltage-controlled oscillator also. The fundamental mode of the oscillator is around 372 GHz with a phase noise measured around -70 dBc/ Hz at 10 MHz offset. The VCO has a tuning range of about 490 MHz when the voltage is varied from 0.3 to 0.8 V. The oscillator circuit consumes power of 3.75 mW from a power supply of 0.8 V

scholarly journals On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2928
Author(s):  
Hsuan-Ling Kao
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
High Electron Mobility Transistors ◽  
Voltage Controlled Oscillator ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
On Chip ◽  
Low Phase Noise

This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at the inner and outer portions of the multi-tapped inductor. All the switches are turned off to obtain the lowest sub-band. The outer transformer with three pairs of switches is turned on alternately to provide three sub-band modes. A pair of switches at the inner transformer provide a high-frequency band. Two switch-loaded transformers are turned on to provide the highest sub-band. Six modes are selected to provide a wide tuning range. The frequency tuning range (FTR) of the VCO is 27.8% from 3.81 GHz to 8.04 GHz with a varactor voltage from 13 V to 22 V. At a 1 MHz frequency offset from the carrier frequency of 4.27 GHz, the peak phase noise is −119.17 dBc/Hz. At a power supply of 12 V, the output power of the carrier at 4.27 GHz is 20.9 dBm. The figure of merit is −186.93 dB because the VCO exhibits a high output power, low phase noise, and wide FTR. To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.

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