scholarly journals Raman study of flash-lamp annealed aqueous Cu2ZnSnS4 nanocrystals

2019 ◽  
Vol 10 ◽  
pp. 222-227 ◽  
Author(s):  
Yevhenii Havryliuk ◽  
Oleksandr Selyshchev ◽  
Mykhailo Valakh ◽  
Alexandra Raevskaya ◽  
Oleksandr Stroyuk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Small Molecules ◽  
Mass Production ◽  
Inert Atmosphere ◽  
Flash Lamp ◽  
Flexible Substrates ◽  
Secondary Phases ◽  
Raman Study ◽  
Power Densities

The effect of flash-lamp annealing (FLA) on the re-crystallization of thin films made of colloidal Cu2ZnSnS4 nanocrystals (NCs) is investigated by Raman spectroscopy. Unlike similar previous studies of NCs synthesized at high temperatures in organic solvents, NCs in this work, which have diameters as small as 2–6 nm, were synthesized under environmentally friendly conditions in aqueous solution using small molecules as stabilizers. We establish the range of FLA conditions providing an efficient re-crystallization in the thin film of NCs, while preserving their kesterite structure and improving their crystallinity remarkably. The formation of secondary phases at higher FLA power densities, as well as the dependence of the formation on the film thickness are also investigated. Importantly, no inert atmosphere for the FLA treatment of the NCs is required, which makes this technology even more suitable for mass production, in particular for printed thin films on flexible substrates.

Experimental Study of the High Cycle Fatigue of Thin Film Metal on Polyethylene Terephthalate for Flexible Electronics Applications

2009 ◽  
Author(s):  
Khalid Alzoubi ◽  
Susan Lu ◽  
Bahgat Sammakia ◽  
Mark Poliks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Flexible Electronics ◽  
Electrical Resistance ◽  
Thermal Stresses ◽  
Electronic Systems ◽  
Total Width ◽  
Flexible Substrates ◽  
Polyethylene Naphthalate

Flexible electronics represent an emerging area in the electronics packaging and systems integration industry with the potential for new product development and commercialization in the near future. Manufacturing electronics on flexible substrates will produce low cost devices that are rugged, light, and flexible. However, electronic systems are vulnerable to failures caused by mechanical and thermal stresses. For electronic systems on flexible substrates repeated stresses below the ultimate tensile strength or even below the yield strength will cause failures in the thin films. It is known that mechanical properties of thin films are different from those of bulk materials; so, it is difficult to extrapolate bulk material properties on thin film materials. The objective of this work is to study the behavior of thin-film metal coated flexible substrates under high cyclic bending fatigue loading. Polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are widely used substrates in the fabrication of microelectronic devices. Factors affecting the fatigue life of thin-film coated flexible substrates were studied, including thin film thickness, temperature, and humidity. A series of experiments for sputter-deposited copper on PET substrates were performed. Electrical resistance and crack growth rate were monitored during the experiments at specified time intervals. High magnification images were obtained to observe the crack initiation and propagation in the metal film. Statistical analysis based on design of experiments concepts was performed to identify the main factors and factor’s interaction that affect the life of a thin-film coated substrate. The results of the experiments showed that the crack starts in the middle of the sample and slowly grows toward the edges. Electrical resistance increases slightly during the test until the crack length covers about 90% of the total width of the sample where a dramatic increase in the resistance takes place.

Grazing-incidence X-ray scattering of lamellar thin films

2019 ◽  
Vol 52 (2) ◽  
pp. 247-251
Author(s):  
Detlef-M. Smilgies
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Small Molecules ◽  
Film Studies ◽  
Grazing Incidence ◽  
Semicrystalline Polymers ◽  
X Ray ◽  
X Ray Scattering ◽  
Incident Plane ◽  
Ray Scattering

Recently, surface and thin-film studies using area detectors have become prevalent. An important class of such systems are lamellar thin films formed by small molecules, liquid crystals or semicrystalline polymers. Frequently, the lamellae align more or less parallel to the substrate. Such structures can be easily discerned by their characteristic X-ray scattering close to the incident plane. This paper describes how such patterns can be simulated, in order to extract morphological information about the thin film.

Mass Production and Film Thickness Control of Meso Porous Silica Thin Films

2020 ◽  
Author(s):  
Makio Tamada ◽  
Yuta Sunami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Mass Production ◽  
Porous Silica ◽  
Production Method ◽  
Liquid Pool ◽  
Speed Ratio ◽  
Roll To Roll ◽  
New Material

Abstract Mesoporous silica (referred to as MPS), which has pores of hexagonal or cubic structure of several nm to several tens of nm on the surface, is attracting attention as a new material. MPS has a very large specific surface area, so it is used as an adsorbent for gas and water vapor, as a moisture absorbent, and as a separating material. Transparent MPS is also expected to be an optical functional material. MPS thin film is expected to be used as a thin film as an application example. Since MPS thin film can be used in various applications, it will be further developed by mass production. Leads to Therefore, in this study, mass production of MPS thin films and controlled the film thickness was studied. Roll-to-roll (referred to as R2R) production method and a micro gravure printing method was adopted as a method of mass production: transporting polypropylene film and coating on it. As a result, the MPS thin film prepared in this study had a pore structure. it was confirmed that the film thickness could be controlled by changing the peripheral speed ratio. It is considered that the size of the liquid pool between the coating rolls changed. The size and arrangement of the pores could be confirmed by FE-SEM observation.

scholarly journals Metal phthalocyanines: thin-film formation, microstructure, and physical properties

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21716-21737
Author(s):  
Rosemary R. Cranston ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Properties ◽  
Small Molecules ◽  
Film Formation ◽  
Proper Function ◽  
Next Generation ◽  
Metal Phthalocyanines ◽  
Thin Film Formation

Metal phthalocyanines (MPcs) are an abundant class of conjugated small molecules comprising and their integration into thin films is critial for the proper function of next generation applications.

Indexation scheme for oriented molecular thin films studied with grazing-incidence reciprocal-space mapping

2007 ◽  
Vol 40 (4) ◽  
pp. 716-718 ◽  
Author(s):  
Detlef-M. Smilgies ◽  
Daniel R. Blasini
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Small Molecules ◽  
Organic Electronics ◽  
Grazing Incidence ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Molecular Structures ◽  
Reciprocal Space Mapping ◽  
Mapping Scheme

Thin films of small molecules relevant to organic electronics applications often show a confusing degree of polymorphism. An effective reciprocal-space mapping scheme has been developed in order to find and index thin-film reflections which are related to previously known molecular structures. By method of elimination, thin-film reflections due to novel thin-film phases can thus be identified.

In situ fabrication of Cu2ZnSnS4 nanoflake thin films on both rigid and flexible substrates

CrystEngComm ◽  
2014 ◽  
Vol 16 (27) ◽  
pp. 6244-6249 ◽  
Author(s):  
Xuezhen Zhai ◽  
Huimin Jia ◽  
Yange Zhang ◽  
Yan Lei ◽  
Jie Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stainless Steel ◽  
Czts Thin Film ◽  
Flexible Substrates ◽  
In Situ Fabrication

Pure CZTS thin film is formed directly at a temperature of 250 °C, the lowest temperature of any current fabrication system, on both flexible stainless steel and rigid FTO substrates.

The Effect of Annealing Atmosphere on Electrical Properties of BST Thin Films Prepared on Copper Foils

2009 ◽  
Vol 79-82 ◽  
pp. 831-834
Author(s):  
Yan Hua Fan ◽  
Shu Hui Yu ◽  
Shuai Qin Yu ◽  
Li Hua Dong ◽  
Wei Ke Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Perovskite Phase ◽  
Inert Atmosphere ◽  
Dielectric Constants ◽  
Annealing Atmosphere ◽  
Sem Images ◽  
Bst Thin Films ◽  
Copper Foils ◽  
Bst Thin Film

Ba0.7Sr0.3TiO3 (BST) thin films have been prepared on copper foils via sol-gel method in almost inert atmosphere containing different level of oxygen which was achieved by flowing high purified argon with the varied rate from 0.3 L/min to 2.0 L/min. X-ray diffraction pattern of the BST thin film exhibits dominant perovskite phase. SEM images reveal good crystallization and much dense structure of the thin film. The BST thin film annealed at almost inert atmosphere by flowing the high purified argon at the rate of 0.5 L/min, exhibits highest dielectric constants which are 1549.65 and 1350.86 at the frequency of 10 kHz and 1 MHz, respectively. Additionally, the film also shows optimized ferroelectric behavior and low leakage current density. The mechanism of the annealing atmosphere on properties of BST thin films was investigated.

Preparation and Properties of Multiferroic La-Doped BiFeO3 Thin Film

2012 ◽  
Vol 486 ◽  
pp. 417-421 ◽  
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Secondary Phases ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Process ◽  
La Doped

Multiferroic La-doped Bi1-xLaxFeO3 thin films were prepared on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The crystal structure of La-doped Bi1-xLaxFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases. The grain size of La-doped BiFeO3 thin films tends to become larger and the grain boundary is gradually ambiguous compared to pure BiFeO3. The double remanent polarization 2Pr of Bi0.9La0.1FeO3 thin film annealed at 500°C is 6.66 µC/cm2, which is slightly improved than that of pure BiFeO3 thin film. With the increase of La-doping levels, the dielectric constant is increased and the dielectric loss is obviously decreased.

scholarly journals Ultra-smooth glassy graphene thin films for flexible transparent circuits

2016 ◽  
Vol 2 (11) ◽  
pp. e1601574 ◽  
Author(s):  
Xiao Dai ◽  
Jiang Wu ◽  
Zhicheng Qian ◽  
Haiyan Wang ◽  
Jie Jian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Glassy Carbon ◽  
Flexible Substrates ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Large Area ◽  
Conductive Materials ◽  
Lattice Planes

Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon–like mechanical and chemical stability. Moreover, glassy graphene–based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits.

Preparation and Characterization of BiFeO3 Film via Sol-Gel Spin-Coating Process

2011 ◽  
Vol 492 ◽  
pp. 202-205 ◽  
Author(s):  
Xi Wei Qi ◽  
Xiao Yan Zhang ◽  
Xuan Wang ◽  
Hai Bin Sun ◽  
Jian Quan Qi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Secondary Phases ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

BiFeO3 thin films were spin-coated on conductive indium tin oxide (ITO)/glass substrates by a simple sol-gel possess annealed at 470-590°C. The crystal structure of as-prepared BiFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases was also confirmed. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 thin film was about 320 nm. The double remanent polarization 2Pr of BiFeO3 thin film annealed at 500°C is 2.5 μC/cm2 without applied field at room temperature. Image of atomic force microscopy indicated that the root-mean-square surface roughness value of BiFeO3 thin film was 6.13 nm.

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