High Temperature Reliability of High-power LED Module Using Die Attach Material of Nano-silver Paste

2016 ◽  
Vol 37 (9) ◽  
pp. 1159-1165
Author(s):  
陈佳 CHEN Jia ◽  
李欣 LI Xin ◽  
孔亚飞 KONG Ya-fei ◽  
梅云辉 MEI Yun-hui ◽  
陆国权 LU Guo-quan
Keyword(s):  
High Temperature ◽  
High Power ◽  
Silver Paste ◽  
Nano Silver ◽  
Die Attach ◽  
High Power Led

Test Results of Sintered Nano-Silver Paste Die Attach for High Temperature Applications

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000037-000049
Author(s):  
Paul Croteau ◽  
Sayan Seal ◽  
Ryan Witherell ◽  
Michael Glover ◽  
Shashank Krishnamurthy ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling System ◽  
Wide Band ◽  
Power Converter ◽  
Test Results ◽  
Silver Paste ◽  
Nano Silver ◽  
Strain Behavior ◽  
Die Attach ◽  
Sintered Silver

The emergence of wide band gap devices has pushed the boundaries of power converter operations and high power density applications. It is desirable to operate a power inverter at high switching frequencies to reduce passive filter weight and at high temperature to reduce the cooling system requirement. Therefore, materials and components that are reliable at temperatures ranging from −55 to 200 °C, or higher, are needed. Sintered silver is receiving significant attention in the power electronic industry. The porous nature of sintered nano-silver paste with a reduced elastic modulus has the potential to provide strain relief between the die component and substrate while maintaining its relatively high melting point after sintering. The test results presented herein include tensile testing to rupture of sintered silver film to characterize stress strain behavior, as well as die shear and thermal cyclic tests of sintered silver bonded silicon die specimens to copper substrates to determine shear strength and reliability.

Improved Heat Dissipation and Optical Performance of High-power LED Packaging with Sintered Nanosilver Die-attach Material

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001585-001605 ◽  
Author(s):  
Paul Panaccione ◽  
Tao Wang ◽  
Guo-Quan Lu ◽  
Xu Chen ◽  
Susan Luo
Keyword(s):  
Thermal Resistance ◽  
High Power ◽  
Heat Removal ◽  
High Current ◽  
Die Attach ◽  
High Power Led ◽  
Silver Epoxy ◽  
The Difference ◽  
Nanosilver Paste ◽  
The Impact

Heat removal in packaged high-power light-emitting diode (LED) chips is critical to device performance and reliability. Thermal performance of LEDs is important in that lowered junction temperatures extend the LED's lifetime at a given photometric flux (brightness). Optionally, lower thermal resistance can enable increased brightness operation without exceeding the maximum allowable Tj for a given lifetime. A significant portion of the junction-to-case thermal resistance comes from the joint between chip and substrate, or the die-attach layer. In this study, we evaluated three different types of leading die-attach materials; silver epoxy, lead-free solder, and an emerging nanosilver paste. Each of the three was processed via their respective physical and chemical mechanisms: epoxy curing by cross-linking of polymer molecules; intermetalic soldering by reflow and solidification; and nanosilver sintering by solid-state atomic diffusion. High-power LED chips with a chip area of 3.9 mm2 were attached by the three types of materials onto metalized aluminum nitride substrates, wire-bonded, and then tested in an electro-optical setup. The junction-to-heatsink thermal resistance of each LED assembly was determined by the wavelength shift methodology, described in detail in this paper. We found that the average thermal resistance in the chips attached by the nanosilver paste was the lowest, and it is the highest from the chips attached by the silver epoxy: the difference between the two was about 0.7°C/W, while the difference between the sintered and soldered was about 0.3°C/W. The lower thermal resistance in the sintered joints is expected to significantly improve the photometric flux from the device. Simple calculations, excluding high current efficiency droop, predict that the brightness improvement could be as high as 50% for the 3.9 mm2 chip. The samples will be functionally tested at high current, in both steady-state and pulsed operation, to determine brightness improvements, including the impact of droop. Nanosilver die-attach on a range of chip sizes up to 12 mm2 are also considered and discussed.

Improved Heat Dissipation and Optical Performance of High-Power LED Packaging with Sintered Nanosilver Die-Attach Material

2010 ◽  
Vol 7 (3) ◽  
pp. 164-168 ◽  
Author(s):  
Paul Panaccione ◽  
Tao Wang ◽  
Xu Chen ◽  
Susan Luo ◽  
Guo-Quan Lu
Keyword(s):  
Thermal Resistance ◽  
High Power ◽  
Heat Removal ◽  
High Current ◽  
Die Attach ◽  
High Power Led ◽  
Silver Epoxy ◽  
The Difference ◽  
Nanosilver Paste ◽  
The Impact

Heat removal in packaged high-power light-emitting diode (LED) chips is critical to device performance and reliability. Thermal performance of LEDs is important in that lowered junction temperatures extend the LED's lifetime at a given pho-tometric flux (brightness). Optionally, lower thermal resistance can enable increased brightness operation without exceeding the maximum allowable Tj for a given lifetime. A significant portion of the junction-to-case thermal resistance comes from the joint between chip and substrate, or the die-attach layer. In this study, we evaluated three different types of leading die-attach materials; silver epoxy, lead-free solder, and an emerging nanosilver paste. Each of the three was processed via their respective physical and chemical mechanisms: epoxy curing by cross-linking of polymer molecules; intermetalic soldering by reflow and solidification; and nanosilver sintering by solid-state atomic diffusion. High-power LED chips with a range of chip areas from 3.9 mm2 to 9.0 mm2 were attached by the three types of materials onto metalized aluminum nitride substrates, wire-bonded, and then tested in an electro-optical setup. The junction-to-heatsink thermal resistance of each LED assembly was determined by the wavelength shift methodology. We found that the average thermal resistance in the chips attached by the nanosilver paste was the lowest, and it was highest from the chips attached by the silver epoxy. For the 3.9 mm2 die, the difference was about 0.6°C/W, while the difference between the sintered and soldered was about 0.3°C/W. The lower thermal resistance in the sintered joints is expected to significantly improve the photometric flux from the device. Simple calculations, excluding high current efficiency droop, predict that the brightness improvement could be as high as 50% for the 3.9 mm2 chip. The samples will be functionally tested at high current, in both steady-state and pulsed operation, to determine brightness improvements, including the impact of droop. Nanosilver die-attach on a range of chip sizes up to 12 mm2 are also considered and discussed.

Thermal Characteristics Analysis of Die Attach Layer Based on Time-Constant Spectrum for High-Power LED

2015 ◽  
Vol 62 (11) ◽  
pp. 3715-3721 ◽  
Author(s):  
Wei Lai ◽  
Xianming Liu ◽  
Weimin Chen ◽  
Xiaohua Lei ◽  
Xueying Cao
Keyword(s):  
Time Constant ◽  
High Power ◽  
Thermal Characteristics ◽  
Die Attach ◽  
High Power Led ◽  
Characteristics Analysis

scholarly journals Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Piaopiao He ◽  
Jinlong Zhang ◽  
Jianhua Zhang ◽  
Luqiao Yin
Keyword(s):  
Thermal Stress ◽  
Thermal Resistance ◽  
Void Fraction ◽  
High Power ◽  
Thermal Strain ◽  
Mechanical And Thermal Properties ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Die Attach ◽  
High Power Led

The reliability of high-power light-emitting-diode (LED) devices strongly depends on the die-attach quality because voids may increase junction temperature and total thermal resistance of LED devices. Die-attach material has a key role in the thermal management of high-power LED package by providing low-contact thermal resistance. Thermal and mechanical analyses were carried out by experiments and thermal simulation. The quantitative analysis results show that thermal resistance of die-attach layer (thermal resistance caused by die-attach material and voids in die-attach layer) plays an important role in total thermal resistance of high-power LED packaging according to the differential structure function of thermal transient characteristics. The increase of void fraction in die-attach layer causes the increases of thermal resistance of die-attach layer; the thermal resistance increased by 1.95 K/W when the void fraction increased to 62.45%. The voids also make an obvious influence on thermal stress and thermal strain of chip; the biggest thermal stress of chip was as high as 847.1 MPa compared to the 565.2 MPa when the void fraction increases from being void-free to 30% in the die-attach layer.

Study of Thermal Stress in Nano Silver Bonded Silicon Substrates for High Temperature Applications

2019 ◽  
Vol 2019 (HiTen) ◽  
pp. 000052-000055
Author(s):  
G.D. Liu ◽  
C.H. Wang
Keyword(s):  
Thermal Stress ◽  
High Temperature ◽  
Silver Layer ◽  
Silicon Substrates ◽  
The Finite Element Method ◽  
Nano Silver ◽  
Silicon Chips ◽  
Die Attach ◽  
The Relationship ◽  
Sintered Silver

Abstract The silver nanoparticle paste is a promising material for high temperature die-attach applications. In this paper, the finite element method is used to study the relationship between the thickness of the sintered silver layer and the thermal stress in the sintered silver joint. Silicon chips are bonded together with sintered silver layers of different thicknesses. In the experimental study, strain gauges are attached onto the surface of the upper silicon and used to estimate the effects of the nano silver die-attach layer. The results show that the average stress in the silver layer at the interface decreases with the increasing thickness of the silver layer, while the stress on the silicon surface increases with the increasing thickness of the silver layer.

Investigation into the Role of Different Substrate Ni Compositions and Plating Methods on Die Attach Reliability

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000073-000082
Author(s):  
Jinzi Cui ◽  
R. Wayne Johnson ◽  
Michael C. Hamilton
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
High Power ◽  
Diffusion Barrier ◽  
Die Attach ◽  
High Temperature Storage ◽  
The Impact ◽  
Direct Bond Copper ◽  
Temperature Storage

Nickel is a commonly used diffusion barrier for direct bond copper (DBC) substrates used in high temperature, high power applications. The Ni can be deposited by electroless or electrolytic plating and may be pure Ni, Ni:P, Ni:B or Ni:Co. The reactivity of these different Ni layers with AuGe and BiAgX® solder is explored. Specifically the reaction to form Ni-Ge intermetallics and NiBi3 during high temperature storage and the impact on die shear strength and failure mode are discussed.

Thermal transient characteristics of die attach in high power LED PKG

2008 ◽  
Vol 48 (3) ◽  
pp. 445-454 ◽  
Author(s):  
Hyun-Ho Kim ◽  
Sang-Hyun Choi ◽  
Sang-Hyun Shin ◽  
Young-Ki Lee ◽  
Seok-Moon Choi ◽  
...  
Keyword(s):  
High Power ◽  
Transient Characteristics ◽  
Die Attach ◽  
High Power Led ◽  
Thermal Transient
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