Simulation of Interfacial Stress in Sapphire-GaN Heterogeneous Film System

2020 ◽  
Vol 57 (19) ◽  
pp. 193102
Author(s):  
李增林 Li Zenglin ◽  
左然 Zuo Ran
2021 ◽  
Vol 351 ◽  
pp. 129347
Author(s):  
Joanna Tkaczewska ◽  
Piotr Kulawik ◽  
Ewelina Jamróz ◽  
Paulina Guzik ◽  
Marzena Zając ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3333
Author(s):  
Eduardo L. Silva ◽  
Sérgio Pratas ◽  
Miguel A. Neto ◽  
Cristina M. Fernandes ◽  
Daniel Figueiredo ◽  
...  

Cobalt-cemented carbide micro-end mills were coated with diamond grown by chemical vapor deposition (CVD), with the purpose of micro-machining cemented carbides. The diamond coatings were designed with a multilayer architecture, alternating between sub-microcrystalline and nanocrystalline diamond layers. The structure of the coatings was studied by transmission electron microscopy. High adhesion to the chemically pre-treated WC-7Co tool substrates was observed by Rockwell C indentation, with the diamond coatings withstanding a critical load of 1250 N. The coated tools were tested for micro-end-milling of WC-15Co under air-cooling conditions, being able to cut more than 6500 m over a period of 120 min, after which a flank wear of 47.8 μm was attained. The machining performance and wear behavior of the micro-cutters was studied by scanning electron microscopy and energy-dispersive X-ray spectroscopy. Crystallographic analysis through cross-sectional selected area electron diffraction patterns, along with characterization in dark-field and HRTEM modes, provided a possible correlation between interfacial stress relaxation and wear properties of the coatings. Overall, this work demonstrates that high adhesion of diamond coatings can be achieved by proper combination of chemical attack and coating architecture. By preventing catastrophic delamination, multilayer CVD diamond coatings are central towards the enhancement of the wear properties and mechanical robustness of carbide tools used for micro-machining of ultra-hard materials.


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Y. B. Xu ◽  
Y. L. Tang ◽  
Y. L. Zhu ◽  
Y. Liu ◽  
S. Li ◽  
...  

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.


2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park

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