scholarly journals Thick epitaxial GaAsBi layers for terahertz components: the role of growth conditions

2018 ◽  
Vol 58 (1) ◽  
Author(s):  
Sandra Stanionytė ◽  
Artūras Vailionis ◽  
Virginijus Bukauskas ◽  
Saulius Tumėnas ◽  
Andrius Bičiūnas ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Carrier Dynamics ◽  
Technological Parameters ◽  
Carrier Lifetimes ◽  
C Complex ◽  
Structure Layer

A series of 1.5 μm-thick epitaxial GaAsBi layers have been grown by molecular beam epitaxy on semi-insulating GaAs(100) substrates at temperatures ranging from 300 to 370°C. Complex studies were carried out with a focus to optimize the technological parameters for application of these layers in photoconductive THz components. The investigation of crystalline structure, layer morphology, optical properties, and characteristics of carrier dynamics was performed. Up to 12% of Bi incorporation has been confirmed by optical and structural analyses of GaAsBi layers grown at relatively low temperatures of about 300°C. The carrier lifetimes of these layers varied from 1 to 3 ps. Thick GaAsBi layers grown at higher than 350°C temperatures exhibited higher crystalline quality and longer carrier lifetimes reaching even tens of picoseconds. The Bi content in high-temperature-grown GaAsBi varied from 3 to 7% Bi.

scholarly journals Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Biaxial Strain ◽  
High Energy Electron ◽  
Inas Quantum Dots ◽  
Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

scholarly journals Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 15 (6) ◽  
pp. 2661-2666 ◽  
Author(s):  
Steven Albert ◽  
Ana Bengoechea-Encabo ◽  
Xiang Kong ◽  
Miguel A. Sánchez-Garcia ◽  
Achim Trampert ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART I—SILICON

1994 ◽  
Vol 08 (09) ◽  
pp. 1093-1158 ◽  
Author(s):  
S.J. PEARTON
Keyword(s):  
Vapor Deposition ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Hydrogen Diffusion ◽  
Deep Level ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Device Operation ◽  
Diffusion Profiles

Hydrogen plays an important role in the properties of Si because of its ability to passivate the electrical activity of shallow dopants and deep level impurities. This passivation can occur during virtually every stage of crystal growth, device fabrication or device operation due to the rapid diffusivity of hydrogen at low temperatures and the fact that it is a component of virtually every gas or liquid that comes in contact with Si. We review the ability of hydrogen to form neutral complexes with dopants and impurities, give examples of hydrogen diffusion profiles in doped and undoped Si, and mention the role of hydrogen during chemical vapor deposition and molecular beam epitaxy of Si.

scholarly journals Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 886
Author(s):  
Fang-I Lai ◽  
Jui-Fu Yang ◽  
Woei-Tyng Lin ◽  
Wei-Chun Chen ◽  
Yu-Chao Hsu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam ◽  
Phonon Dispersion ◽  
High Energy ◽  
Correlation Effect ◽  
Carrier Dynamics ◽  
Low Dislocation Density ◽  
Good Crystalline Quality ◽  
Metal Organic ◽  
Energy Dependent

In this study, we report the catalyst-free growth of n-type wurtzite InN, along with its optical properties and carrier dynamics of different surface dimensionalities. The self-catalyzed epitaxial growth of InN nanorods grown by metal–organic molecular-beam epitaxy on GaN/Al2O3(0001) substrates has been demonstrated. The substrate temperature is dominant in controlling the growth of nanorods. A dramatic morphological change from 2D-like to 1D nanorods occurs with decreasing growth temperature. The InN nanorods have a low dislocation density and good crystalline quality, compared with InN films. In terms of optical properties, the nanorod structure exhibits strong recombination of Mahan excitons in luminescence, and an obvious spatial correlation effect in phonon dispersion. The downward band structure at the nanorod surface leads to the photon energy-dependent lifetime being upshifted to the high-energy side.

scholarly journals Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 90 (4) ◽  
pp. 785-788 ◽  
Author(s):  
M. Godlewski ◽  
J.P. Bergman ◽  
B. Monemar ◽  
E. Kurtz ◽  
D. Hommel
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Conditions

Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

2005 ◽  
Vol 86 (5) ◽  
pp. 052101 ◽  
Author(s):  
R. M. Frazier ◽  
G. T. Thaler ◽  
J. Y. Leifer ◽  
J. K. Hite ◽  
B. P. Gila ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions
Sign in / Sign up

Export Citation Format

Share Document