Effect of Oxygen Flow Rate and Temperature on the Structure of DC Sputtered Nanocrystalline Copper Oxide Films

2007 ◽  
Vol 31 ◽  
pp. 129-131 ◽  
Author(s):  
M.J. Chiang ◽  
C.W. Wu ◽  
H.E. Cheng
Keyword(s):  
Copper Oxide ◽  
Band Gap ◽  
Flow Rate ◽  
Oxide Films ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Deposition Condition ◽  
X Ray Diffraction ◽  
Nanocrystalline Copper ◽  
X Ray

Copper oxide, a direct band gap semiconductor with band gap about 1.21-1.51 eV, has been regarded as a promising material for photovoltaic. Nanocrystalline copper oxide films have been synthesized on Si by dc sputtering method. The effects of oxygen flow rate and deposition temperature on the microstructure of nanocrystalline copper oxide films were investigated. X-ray diffraction analysis shows that a broaden peak of Cu2O (111) at 36.720 was observed at the deposition condition of DC power 150 W, pressure 2*10-2 Torr, substrate temperature 100 °C, Ar flow rate 15 sccm and O2 flow rate 1sccm. With increasing the oxygen flow rate to 3 and 5 sccm, CuO (-111) could be observed at 36.58o. The increase of oxygen flow rate resulted in the film formation from Cu2O to CuO. SEM pictures show that copper oxide films exhibit nanosize grains. X-ray diffraction patterns of CuO films deposited at 50~200 °C show that only (-111) plane is obtained. The SEM pictures show that the grain size increases with the deposition increases.

Effects of Reaction Conditions on Deposition of Ferrites from Alkaline Metal Hydroxide Gels

1997 ◽  
Vol 495 ◽  
Author(s):  
Karl F. Schoch ◽  
Theodore R. Vasilow
Keyword(s):  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Metal Hydroxides ◽  
X Ray ◽  
Oxidation Reduction ◽  
Oxidation Reduction Potential ◽  
Mg Content

ABSTRACTFormation of ferrites from aqueous solution of metal salts is a well known process involving precipitation of metal hydroxides followed by oxidation of the resulting gel. The purpose of the present work was to determine the effects oxygen flow rate on the progress of the reaction and on the structure and properties of the resulting precipitate. The reaction was carried out at 70°C with pH of 10.5 and oxygen flow rate of 2,4, or 8 standard liters per hour. The progress of the reaction was monitored by following the oxidation-reduction potential of the solution, which changes dramatically after the Fe(II) is consumed. The reaction rate increased with increasing oxygen flow rate. The Mg content of the precipitate was lower than that of the reaction mixture, possibly because of the pH of the reaction mixture. X-ray diffraction and infrared spectroscopy confirmed formation of a ferrite under these conditions.

Effect of Oxygen Flow Rate on Surface Morphology and Optical Properties of Reactive DC Magnetron Sputtered TiO2 Thin Films

2021 ◽  
Vol 903 ◽  
pp. 51-56
Author(s):  
Lavanya Mekala ◽  
Sunita Ratnam Srirangam ◽  
Rajesh Kumar Borra ◽  
Subba Rao Thota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Effect Of Oxygen

In the present work, reactive DC magnetron sputtering method is used to deposit TiO2 thin films on glass substrates. The structural, surface morphology and optical studies of TiO2 thin films were discussed by varying the oxygen flow rates from 1 to 4 sccm. X-ray diffraction patterns of TiO2 thin films show amorphous nature. The surface morphological and elemental composition of TiO2 thin films were examined by field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. From the optical absorption spectra, the shifting of absorption edge towards the longer wavelength leads to the decrement of optical bandgap from 3.48 to 3.19 eV with an increase of oxygen flow rate from 1 to 4 sccm.

Role of oxygen flow rate on the structure and stoichiometry of cobalt oxide films deposited by reactive sputtering

2022 ◽  
Vol 40 (1) ◽  
pp. 013405
Author(s):  
Nilton Francelosi A. Neto ◽  
Cristiane Stegemann ◽  
Lucas J. Affonço ◽  
Douglas M. G. Leite ◽  
José H. D. da Silva
Keyword(s):  
Cobalt Oxide ◽  
Flow Rate ◽  
Oxide Films ◽  
Reactive Sputtering ◽  
Oxygen Flow Rate ◽  
Oxygen Flow

Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

2015 ◽  
Vol 73 (1) ◽  
Author(s):  
Jia Wei Low ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Flow Rate ◽  
Langmuir Probe ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

Effects of Oxygen Flow Rate on Nanostructured ZnO Thin Films

2013 ◽  
Vol 667 ◽  
pp. 333-337
Author(s):  
S. Ahmad ◽  
N.D. Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Volume Ratio ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Zno Thin Films ◽  
Average Thickness ◽  
X Ray

Zinc Oxide (ZnO) thin films were deposited on thermally oxidized SiO2 by varying the oxygen flow rate. The deposition process were done using radio frequency (RF) magnetron sputtering at various oxygen flow rate ranging from 0 to 40 sccm. The surface morphology and crystallinity were analyzed by field emission scanning electron microscopy (FESEM) and X-Ray Diffractometer (XRD) respectively. The average thickness and deposition rate decreases with an increase of oxygen content. The grain size was measured by FESEM and it was found that it is also decreasing with the increased of oxygen flow rate. The films grown with 10 sccm oxygen shows the highest (002) peak however it is expected that the sample deposited with 40 sccm oxygen exhibit the highest sensitivity toward NH3 gas due to the highest surface to volume ratio.

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

10.3791/59929 ◽  
2019 ◽  
Author(s):  
Silvia L. Fernandes ◽  
Lucas J. Affonço ◽  
Roberto A. R. Junior ◽  
José H. D. da Silva ◽  
Elson Longo ◽  
...  
Keyword(s):  
Flow Rate ◽  
Niobium Oxide ◽  
Oxide Films ◽  
Reactive Sputtering ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Effect Of Oxygen
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