Preparation and Conductive Properties of Ag Thin Film by DC Magnetron Sputtering Method

2012 ◽  
Vol 217-219 ◽  
pp. 1068-1072
Author(s):  
Jian Guang Lin ◽  
Wei Xiang Weng ◽  
Wei Hui Huang ◽  
Hai Fang Zhou

Ag thin films were prepared on the float-glass substrate by DC magnetron sputtering method. The relationship of surface morphology/electrical properties with technical conditions was investigated. The experimental results showed that sputtering power, sputtering pressure and substrate temperature had effects on the morphology and electrical properties of Ag thin films. The optimum parameters were obtained with sputtering power of 100 W,sputtering pressure of 0.4 Pa and substrate temperature of 130 °C. Under the optimum parameters, the deposited Ag thin film was smooth and its resistivity was as low as 1.96×10-8 Ω•m.

2014 ◽  
Vol 575 ◽  
pp. 254-263 ◽  
Author(s):  
Hua Jing Zheng ◽  
Chi Zhang ◽  
Zheng Ruan

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.


2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.


2017 ◽  
Vol 4 (5) ◽  
pp. 6466-6471 ◽  
Author(s):  
Kittikhun Seawsakul ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Pattantsetakul ◽  
Saksorn Limwichean ◽  
...  

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .


2011 ◽  
Vol 40 (9) ◽  
pp. 1342-1345
Author(s):  
王震东 王震东 ◽  
赖珍荃 赖珍荃 ◽  
范定环 范定环 ◽  
徐鹏 徐鹏

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