Improvement on Resistive Switching Characteristics of SiO2-Based Films by Voltage Stressing

2013 ◽  
Vol 284-287 ◽  
pp. 2543-2547
Author(s):  
Jian Yang Lin ◽  
Bing Xun Wang
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Silicon Oxide ◽  
Memory Cell ◽  
Constant Voltage ◽  
Ion Migration ◽  
Ohm’S Law ◽  
Current Conduction ◽  
Ohm's Law ◽  
Switching Characteristics

In this paper, different silicon oxide-based films and electrode materials were deposited onto the W/Si substrates by sputtering to investigate the resistive switching characteristics of the conductive-bridging RAM cells via the ion migration. A room-temperature constant-voltage stressing has been used to examine its effects on the resistive switching behaviors of the RAM cells in this work. Our experimental results show that the constant-voltage stressing can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cell. After the electrical stressing, the current conduction mechanism in the HRS during the set process of the Cu/Cu:SiO2/W cell can be changed from the Ohm’s law and the space charge limited conduction to the single Ohm’s law.

scholarly journals Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2Films

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Jian-Yang Lin ◽  
Bing-Xun Wang
Keyword(s):  
Space Charge ◽  
Resistive Switching ◽  
Room Temperature ◽  
High Resistance State ◽  
Space Charge Limited Conduction ◽  
Ohm’S Law ◽  
Current Conduction ◽  
Ohm's Law ◽  
Limited Conduction ◽  
Space Charge Limited

SiO2or Cu-doped SiO2(Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS) at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.

Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices

nano Online ◽  
2017 ◽  
Author(s):  
Yao-Feng Chang ◽  
Burt Fowler ◽  
Ying-Chen Chen ◽  
Fei Zhou ◽  
Xiaohan Wu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Silicon Oxide ◽  
Memory Devices ◽  
Switching Characteristics

Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films

2011 ◽  
Vol 47 (3) ◽  
pp. 633-636 ◽  
Author(s):  
Chun-Chieh Lin ◽  
Yi-Peng Chang ◽  
Chia-Cheng Ho ◽  
Yu-Shu Shen ◽  
Bi-Shiou Chiou
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Switching Characteristics

Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO2-Based Resistive Random Access Memory Devices with Different Electrode Materials

2020 ◽  
Vol 20 (10) ◽  
pp. 6489-6494
Author(s):  
Batkhuyag Khorolsuren ◽  
Shenmin Lu ◽  
Chao Sun ◽  
Fang Jin ◽  
Wenqin Mo ◽  
...  
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Electrode Materials ◽  
Metal Electrode ◽  
Ion Migration ◽  
Resistive Layer ◽  
Switching Mechanism ◽  
Oxygen Ion ◽  
Oxygen Ion Migration ◽  
Resistive Switching Mechanism

To study the substitutability of noble metal electrodes in memristors, the effect of Pt/HfO2/Ti structure on the replacement of noble metal electrode Pt by different electrodes was studied. Compared with the unsubstituted devices, the HfO2-based RRAM devices with TiN and TiOxNy electrodes devices showed good resistive switching performance and resistive switching mechanism under oxygen ion migration. Five devices were prepared, and their resistive switching mechanism under oxygen ion migration was investigated. Moreover, besides the resistive switching phenomenon of these RRAM devices, it was found that significant rectifying characteristics were exhibited in a highresistance state (HRS). This phenomenon can be explained by regulation of the Schottky barrier of the interface between the top electrode and the resistive layer, which can be influenced by the migration of oxygen vacancies.

Eliminating failure behavior by introducing CdS inter-layer in Cu2O-based memory cell

2018 ◽  
Vol 81 (2) ◽  
pp. 20101 ◽  
Author(s):  
Weijie Duan ◽  
Zhenxing Liu ◽  
Yang Zhang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Memory Cell ◽  
Memory Device ◽  
Failure Behavior ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Non Volatile Memory ◽  
Switching Characteristics ◽  
High Set

Resistive switching random access memory (RRAM) has attracted great attention due to its outstanding performance for the next generation non-volatile memory. However, the unexpected failure behaviors seriously hinder the further studies and applications of this new memory device. In this work, the bipolar resistive switching characteristics in Pt/CdS/Cu2O/FTO cells are investigated. The CdS inter-layer is used to suppress the failure behavior in set process. Comparing to the Pt/Cu2O/FTO cell, the switching process in Pt/CdS/Cu2O/FTO cell is not affected even at a high set voltage and the failure behavior is eliminated effectively. Therefore, this work proposes a feasible approach to solve the failure problem in RRAM.

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