Morphology and Field-Effect Mobility Characterization of Planar Five-Ring-Fused Dithiophene-Dione

2013 ◽  
Vol 331 ◽  
pp. 452-455 ◽  
Author(s):  
Jing Wang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Layer By Layer ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility ◽  
X Ray Diffraction ◽  
Vapor Growth ◽  
Face To Face ◽  
Atomic Force ◽  
Substrate Temperatures

The thin films of compound 2,7-dihexyl-4,9-dihydro-s-indaceno [1,2-b:5,6-b']- dithiophene-4,9-dione were grown by physical vapor growth at different substrate temperatures. The morphology of surfaces was characterized by atomic force microscope and X-ray diffraction, which exhibits increased crystal grain size and film order with the increase of substrate temperature. The molecule exhibits layer-by-layer packing on the Si/SiO2 substrate and the tilt angle with respect to the substrate is 49.5°, which form extended slipped face-to-face π-stacking in each layer. This result indicates that molecular packing in the thin film is similar to that in the single crystal. The organic field-effect transistors (OFETs) incorporating this compound shows a field effect mobility at the order of 10-3 cm2V-1s-1 and an on-off ratio of 4 × 106 with good air-stability.

scholarly journals A Quinacridone-Diphenylquinoxaline-Based Copolymer for Organic Field-Effect Transistors

Polymers ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 563 ◽  
Author(s):  
Yong Jeong ◽  
Jeong Oh ◽  
Ho Song ◽  
Tae An
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coupling Reaction ◽  
Hole Mobility ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility ◽  
X Ray Diffraction ◽  
Suzuki Coupling Reaction ◽  
X Ray ◽  
Heat Treated

In this work, we characterized poly(quinacridone-diphenylquinoxaline) (PQCTQx). PQCTQx was synthesized by a Suzuki coupling reaction and the synthesized PQCTQx was used as a polymeric semiconducting material in organic field-effect transistors (OFETs) to research the potential of using quinacridone derivatives. The measured field-effect mobility of the pristine PQCTQx film was 6.1 × 10−3 cm2/(V·s). A PQCTQx film heat-treated at 150 °C exhibited good field-effect performances with a hole mobility of 1.2 × 10−2 cm2/(V·s). The improved OFET behaviors resulting from the mild thermal treatment was attributed to improved packing of the molecules in the film, as determined using X-ray diffraction, and to decreased channel resistance.

scholarly journals Electrohydrodynamic-Jet (EHD)-Printed Diketopyrrolopyroole-Based Copolymer for OFETs and Circuit Applications

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1759 ◽  
Author(s):  
Kyunghun Kim ◽  
Se Hyun Kim ◽  
Hyungjin Cheon ◽  
Xiaowu Tang ◽  
Jeong Hyun Oh ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Circuit ◽  
Ring Oscillator ◽  
Organic Field Effect Transistors ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Supply Condition

We report the employment of an electrohydrodynamic-jet (EHD)-printed diketopyrrolopyrrole-based copolymer (P-29-DPPDTSE) as the active layer of fabricated organic field-effect transistors (OFETs) and circuits. The device produced at optimal conditions showed a field-effect mobility value of 0.45 cm2/(Vs). The morphologies of the printed P-29-DPPDTSE samples were determined by performing optical microscopy, X-ray diffraction, and atomic force microscopy experiments. In addition, numerical circuit simulations of the optimal printed P-29-DPPDTSE OFETs were done in order to observe how well they would perform in a high-voltage logic circuit application. The optimal printed P-29-DPPDTSE OFET showed a 0.5 kHz inverter frequency and 1.2 kHz ring oscillator frequency at a 40 V supply condition, indicating the feasibility of its use in a logic circuit application at high voltage.

Degradation of organic field-effect transistors made of pentacene

2004 ◽  
Vol 19 (7) ◽  
pp. 1999-2002 ◽  
Author(s):  
Ch. Pannemann ◽  
T. Diekmann ◽  
U. Hilleringmann
Keyword(s):  
Charge Carrier ◽  
Threshold Voltage ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Ambient Air ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Semiconducting Material

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

scholarly journals Gradient Copolymerization towards High-performance Monocomponent Polymers for Energy and Charge Storages

2021 ◽  
Author(s):  
Yuanwei Zhu ◽  
Wanlong Lu ◽  
Nan Qiao ◽  
Huize Cui ◽  
Zhipeng Hu ◽  
...  
Keyword(s):  
Energy Density ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Filtration Efficiency ◽  
Nano Composites ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility ◽  
Nano Composite ◽  
Practical Applications

Abstract Polymers with excellent dielectric and electret capabilities are crucial for energy storage films, organic electronics and environmental filtrations. Nanocomposites is an emerging effective method, but the characteristics of complicated preparation, poor uniformity and high cost restrict its massive and practical applications. Here, we propose a gradient copolymerization strategy with controllable micro-phase interfaces for dielectric capability modulation, and gradient ethylene-styrene copolymer (PESt) exhibits extraordinarily enhanced dielectric, electrical insulating and electret properties against polyethylene and polystyrene. PESt exhibits a dielectric energy density towards 23 J·cm− 3, far exceeding commercially applied polymers and is comparable to nano-composites. By applying PESt as electret layer in organic field-effect transistors, largely enhanced memory window, optimized stability and field-effect mobility over 27 cm2·V− 1·s− 1 are achieved. Finally, PESt electret is employed in environmental filtrations with 20% enhancement in filtration efficiency. The simplicity and processability of gradient copolymerization against nano-composite, further suggest its potential in designing high-performance dielectric/electret polymers.

scholarly journals Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

2014 ◽  
Vol 14 (3) ◽  
pp. 121-134 ◽  
Author(s):  
Lina Rambausek ◽  
Els Bruneel ◽  
Gilbert De Mey ◽  
Lieva Van Langenhove
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dip Coating ◽  
Organic Field Effect Transistors ◽  
Force Microscopy ◽  
Layered Architecture ◽  
Atomic Force ◽  
Production Techniques

Abstract In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on its realisation. Microelectronics like organic field effect transistor (OFET) can be manufactured with a layered architecture. The production techniques used for this purpose can also be applied on textile substrates. Besides gate, active and contact layers, the isolating or dielectric layer is of high importance in the OFET architecture. Therefore, generating a high quality dielectric layer that is of low roughness and insulating at the same time is one of the fundamental requirements in building microelectronics on textile surfaces. To evaluate its potential, we have studied polyimide as a dielectric layer, dip-coated onto copper-coated polyester filaments. Accordingly, the copper-coated polyester filament was dip-coated from a polyimide solution with two different solvents, 1-methyl-2-pyrrolidone (NMP) and dimethylformaldehyde. A variety of dip-coating speeds, solution concentrations and solvent-solute combinations have been tested. Their effect on the quality of the layer was analysed through microscopy, leak current measurements and atomic force microscopy (AFM). Polyimide dip-coating with polyimide resin dissolved in NMP at a concentration of 15w% in combination with a dip-coating speed of 50 mm/min led to the best results in electrical insulation and roughness. By optimising the dielectric layer’s properties, the way is paved for applying the subsequent semi-conductive layer. In further research, we will be working with the organic semiconductor material TIPS-Pentacene

scholarly journals Modeling of Grazing-Incidence X-ray Diffraction from Naphthyl End-Capped Oligothiophenes in Organic Field-Effect Transistors

2020 ◽  
Vol 20 (6) ◽  
pp. 3968-3978
Author(s):  
Michael J. Winokur ◽  
Mathias K. Huss-Hansen ◽  
Andreas E. Lauritzen ◽  
Mika Torkkeli ◽  
Jakob Kjelstrup-Hansen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Grazing Incidence ◽  
Organic Field Effect Transistors ◽  
X Ray Diffraction ◽  
X Ray
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