Study of the Interfacial Reaction between the Sn-3.5Ag Solder and Electroless Ni-P Metallization

2013 ◽  
Vol 441 ◽  
pp. 19-21
Author(s):  
Guang Yu Yang
Keyword(s):  
Interfacial Reaction ◽  
P System ◽  
Reflow Time ◽  
Diffusion Controlled ◽  
Solder Reaction ◽  
Free Solder ◽  
Electroless Ni ◽  
Kinetics Of ◽  
Made In

This work summarizes the interfacial reaction between lead-free solder Sn-3.5Ag and electrolessly plated Ni-P metallization in terms of morphology and growth kinetics of the intermetallic compounds (IMC). Comparison with pure Ni metallization is made in order to clarify the role of P in the solder reaction. During reflow, the IMCs formed with the Ni-P under-bump metallization (UBM) exist in chunky crystal blocks and small crystal agglomerates, while the ones with the sputtered Ni UBM exhibit uniformly scallop grains with faceted surfaces. The IMC thickness increases with reflow time following approximately a t^sup 1/3^ power law for both systems. The IMC growth rate is higher with the Ni-P UBM than the Ni UBM. The thickness of the Ni^sub 3^Sn^sub 4^ layer increases linearly with the square root of thermal aging time, indicating that the growth of the IMCs is a diffusion-controlled process. The activation energy for Ni^sub 3^Sn^sub 4^ growth in solid-state reaction is found to be 110 kJ/mol and 91 kJ/mol for the Ni-P and sputtered Ni UBMs, respectively. Kirkendall voids are detected inside the Ni^sub 3^P layer in the Sn-3.5AgTNi-P system. No such voids are found in the Sn-3.5AgTNi system.

The role of a ternary Ni-Sn-P layer as a diffusion barrier in the Sn-Ag solder/electroless Ni-P system

2012 ◽  
Vol 44 (11-12) ◽  
pp. 1503-1506 ◽  
Author(s):  
Jee-Hwan Bae ◽  
Han-Byul Kang ◽  
Jiho Ryu ◽  
Cheol-Woong Yang
Keyword(s):  
Diffusion Barrier ◽  
P System ◽  
Electroless Ni

Growth Kinetics of IMC Formed between Sn-3.5Ag-0.75Cu BGA Solder and Electroless Ni-P/Cu Substrate by Solid-State Isothermal Aging

2004 ◽  
Vol 449-452 ◽  
pp. 893-896 ◽  
Author(s):  
Jeong Won Yoon ◽  
Chang Bae Lee ◽  
Seung Boo Jung
Keyword(s):  
Solid State ◽  
Growth Kinetics ◽  
Isothermal Aging ◽  
Ball Grid Array ◽  
Cu Substrate ◽  
Diffusion Controlled ◽  
Increasing Temperature ◽  
Electroless Ni ◽  
Kinetics Of ◽  
Deposit Layer

The growth kinetics of intermetallic compound (IMC) layers formed between Sn-3.5Ag-0.75Cu BGA (ball grid array) solder and electroless Ni-P/Cu substrate by solid state isothermal aging were examined at temperatures between 70 and 170°C for 0 to 100 days. In the solder joints between the solder ball and electroless Ni-P/Cu pads, the IMC layer was (Cu,Ni)6Sn5. Also, a P-rich Ni layer formed at the interface between (Cu,Ni)6Sn5 and original Ni-P deposit layer because of the phosphorous accumulation. These IMC layer thicknesses increased linearly with the square root of aging time and the growth was faster for higher aging temperatures. On the contrary, the shear strength decreased with the increasing temperature and time. The growth of IMC layer was mainly controlled by diffusion-controlled mechanism over the temperature range studied. The apparent activation energy calculated for the growth of the (Cu,Ni)6Sn5 IMC was 69.75 kJ/mol.

Kinetics of Interfacial Reaction in SiCf/Ti6Al4V Composites

2007 ◽  
Vol 546-549 ◽  
pp. 1627-1632 ◽  
Author(s):  
Yan Qing Yang ◽  
X.H. Lu ◽  
X. Luo ◽  
Z.J. Ma ◽  
J.K. Li ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Reaction Zone ◽  
Growth Kinetics ◽  
Diffusion Theory ◽  
Element Distribution ◽  
Reaction Products ◽  
Sic Fiber ◽  
Diffusion Controlled ◽  
Kinetics Of

The Ti6Al4V composites reinforced with Chinese SiC fiber was manufactured and then thermally exposed at 800°C, 900°C and 1000°C, respectively, for up to 500h. The interfacial reaction products were identified as TiC between Ti6Al4V and the C-coating of the SiC fiber. However, if the SiC fiber has no C-coating, the interfacial reaction forms TiC, Ti3SiC2, Ti5Si3(Cx) and Ti3Si(Cx). The thickness of the interfacial reaction zone was measured and it is found that the thickening rate is slower in the samples in which the SiC fiber has the C-coating. The growth of the interfacial reaction products is diffusion-controlled and the parameters of the growth kinetics, k0 and Q, were determined, respectively. The profile of the element distribution was calculated according to the diffusion theory and is well consistent with the expeimental data.

Correlation between Ni3Sn4 intermetallics and Ni3P due to solder reaction-assisted crystallization of electroless Ni–P metallization in advanced packages

2000 ◽  
Vol 15 (11) ◽  
pp. 2534-2539 ◽  
Author(s):  
K. C. Hung ◽  
Y. C. Chan ◽  
C. W. Tang ◽  
H. C. Ong
Keyword(s):  
Growth Rate ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Kinetic Data ◽  
Diffusion Controlled ◽  
Solder Reflow ◽  
Solder Reaction ◽  
Underlying Mechanisms ◽  
Electroless Ni ◽  
Scanning Electron

Ni3Sn4 intermetallic was formed by the depletion of Ni from electroless Ni–P, and a Ni3P layer was formed simultaneously due to solder reaction-assisted crystallization during solder reflow. Both Ni3Sn4 and Ni3P grew rapidly due to the solder reaction-assisted crystallization and their growth was diffusion controlled during the first 15 min of annealing at 220 °C. After that, the growth rate of Ni3Sn4 was greatly reduced and the crystallization of electroless Ni–P to Ni3P was no longer induced. Based on kinetic data and scanning electron microscope morphology observations, underlying mechanisms causing this specific phenomenon are proposed. This finding is indeed very crucial since we may control the growth of Ni–Sn intermetallics by monitoring the solder reaction-assisted crystallization of electroless Ni–P.

Modelling Kinetics of Diffusion Controlled Reactive Wetting: The Role of Reaction behind the Triple Line

2000 ◽  
Vol 72 ◽  
pp. 91-98
Author(s):  
F. Hodaj ◽  
J.N. Barbier ◽  
Andreas Mortensen ◽  
Olivier Dezellus ◽  
N. Eustathopoulos
Keyword(s):  
Triple Line ◽  
Reactive Wetting ◽  
Diffusion Controlled ◽  
Kinetics Of

The Reaction Kinetics of Liquid 60/40 Sn/Pb Solder With Copper and Nickel: A High Temperature X-Ray Diffraction Study

1984 ◽  
Vol 40 ◽  
Author(s):  
Patrick W. Dehaven
Keyword(s):  
High Temperature ◽  
Reaction Kinetics ◽  
X Ray Diffraction ◽  
Kcal Mole ◽  
Nickel Metal ◽  
X Ray ◽  
Diffusion Controlled ◽  
Solder Reaction ◽  
Kinetics Of

AbstractWith proper sample preparation, high temperature x-ray diffraction can be used to study in-situ the reactions occurring at a solder/metal interface. We have applied this technique to an investigation of the reaction kinetics between copper and nickel metal and 60/40 Sn/Pb solder. The copper and nickel are shown to follow similar pathways, each having a complex reaction profile that involves an initial “hold” of little reactivity, followed by a two-step diffusion controlled reaction. Activation energies were obtained from Arrhenius-type plots, and result in values of 6.8 kcal/mole for the nickel/solder reaction, and 13 kcal/mole for the copper/solder reaction. These results are compared with those obtained by previous investigators, and discussed in terms of the growth of the different intermetallic phases.

Ripening Growth Kinetics of Cu6Sn5 Grains in Sn-3.0Ag-0.5Cu-xTiO2/Cu Solder Joints During the Reflow Process

2018 ◽  
Vol 140 (1) ◽  
Author(s):  
Y. Tang ◽  
S. M. Luo ◽  
G. Y. Li ◽  
Z. Yang ◽  
C. J. Hou
Keyword(s):  
Grain Size ◽  
Interfacial Reaction ◽  
Growth Kinetics ◽  
Solder Joints ◽  
Dominant Role ◽  
Grain Morphology ◽  
Tio2 Nanoparticle ◽  
Reflow Time ◽  
Order Of Magnitude ◽  
Kinetics Of

The ripening growth kinetics of interfacial Cu6Sn5 grains between Cu substrates and Sn-3.0Ag-0.5Cu-xTiO2 (x = 0, 0.02, 0.05, 0.1, 0.3, and 0.6 wt %) (SAC305-xTiO2) solders were investigated. The results show that the Cu6Sn5 grain morphology is affected by the solder composition and the reflow time. The Cu6Sn5 grain size decreases upon addition of TiO2 and shows a significant decrease when the TiO2 nanoparticle fraction is increased to 0.1 wt %. At higher TiO2 nanoparticle fractions, the Cu6Sn5 grain size increases slightly. The growth of the Cu6Sn5 grains is mainly supplied by the flux of the interfacial reaction and the flux of ripening; the ripening flux plays a dominant role because it is approximately one order of magnitude greater than the interfacial reaction flux. The ripening growth of the Cu6Sn5 grains in the TiO2-containing solder joints is reduced more effectively than that of the Cu6Sn5 grains in the TiO2-free joint. For the SAC305/Cu and SAC305-0.6TiO2/Cu solder joints, the particle size distribution (PSD) of the Cu6Sn5 grains is well fit with the Marqusee and Ross (MR) model when the normalized size value of r/<r> is less than 1, and it is consistent with the flux-driven ripening (FDR) model when the value of r/<r> is greater than 1. On the other hand, for the SAC305-0.1TiO2/Cu solder joint, the Cu6Sn5 grains with a nearly hemispheric scallop shape and the PSD of the Cu6Sn5 grains show good agreement with the FDR model.

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