Surface Roughness and Grain Size Analysis of Treated Indium Tin Oxide(ITO)Film

2014 ◽  
Vol 680 ◽  
pp. 131-134
Author(s):  
Vithyacharan Retnasamy ◽  
Zaliman Sauli ◽  
Steven Taniselass ◽  
Norhawati Ahmad ◽  
Chai Jee Keng ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Initial Study ◽  
Grain Size Analysis ◽  
Size Analysis ◽  
Force Microscopy ◽  
Ito Film ◽  
Atomic Force

An initial study has been conducted to characterize the surface morphology of treated Indium Tin Oxide (ITO). Treatment done is annealing process where the samples are put through heat and annealed for an hour. Time of deposition and layers of ITO has been varied to study the correlation between both.The treated ITO are examined under Atomic Force Microscopy (AFM) for the surface roughness and the grain size. Results shows that deposition time of ITO do play an important role in determining a desired grain size in ITO material.

Surface Structure and Electrochemical Polymerization of Mixed, Thiophene-Capped Monolayers

2001 ◽  
Vol 708 ◽  
Author(s):  
Jung F. Kang ◽  
Katherine Harrison ◽  
S. Michael Kilbey
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electrochemical Polymerization ◽  
Self Assembled Monolayers ◽  
Force Microscopy ◽  
Electrochemical Growth ◽  
Atomic Force ◽  
Assembled Monolayers

ABSTRACTWe have investigated the growth of polythiophene from self-assembled monolayers (SAMs) that contain pendant thiophene groups using electrochemistry and atomic force microscopy. The SAMs are formed on indium tin-oxide (ITO) by coadsorption of 11-(3-thienyl)undecyltrichlorosilane (3TUTS) and undecyltrichlorosilane (UTS). By altering the composition of the underlying monolayers we can manipulate the onset of electrochemical polymerization and affect the surface topography of the resultant polythiophene layer. Films made on SAMs that have high loadings of 3TUTS have small, distinct grains, but as the monolayers become enriched in UTS, the grain size increases; however, these films are neither as rough nor as diffuse as films formed on ITO without an underlying SAM. These experiments suggest that the electrochemical growth and structure of the polythiophene layer can be manipulated by tuning the underlying SAM.

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Han ◽  
K. H. Yoon ◽  
K. H. Kim ◽  
H. G. Jang ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Xrd Pattern ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized

AbstractCopper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kV. The copper films grown at the both conditions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

Structural, morphology and electrical properties of layered copper selenide thin film

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
J. Ying Chyi Liew ◽  
Zainal Talib ◽  
W. Mahmood ◽  
M. Yunus ◽  
Zulkarnain Zainal ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Surface Roughness ◽  
Grain Size ◽  
Copper Selenide ◽  
Layer By Layer ◽  
Structural Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
Evaporation Technique

AbstractThin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

scholarly journals Chemosensing on Miniaturized Plasmonic Substrates

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 275
Author(s):  
Pengcheng Wang ◽  
Rodica Elena Ionescu
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Localized Surface Plasmon Resonance ◽  
Thin Layers ◽  
Localized Surface Plasmon ◽  
Force Microscopy ◽  
Atomic Force ◽  
Model Molecule ◽  
First Time ◽  
Scanning Electron

Round, small-sized coverslips were coated for the first time with thin layers of indium tin oxide (ITO, 10–40 nm)/gold (Au, 2–8 nm) and annealed at 550 °C for several hours. The resulting nanostructures on miniaturized substrates were further optimized for the localized surface plasmon resonance (LSPR) chemosensing of a model molecule—1,2-bis-(4-ppyridyl)-ethene (BPE)—with a detection limit of 10−12 M BPE in an aqueous solution. All the fabrication steps of plasmonic-annealed platforms were characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM).

Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
S. Han ◽  
K. H. Yoon ◽  
K. H. Kim ◽  
H. G. Jang ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Xrd Pattern ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized

AbstractCopper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kW. The copper films grown at the both condiitions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

scholarly journals Electrodeposited copper on indium tin oxide. Reaction and nucleation mechanisms

2018 ◽  
Vol 1 (1) ◽  
pp. 565-571
Author(s):  
Zouaoui Ahmed
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Active Sites ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Diffusion Controlled ◽  
Instantaneous Nucleation ◽  
Nucleation Mechanisms ◽  
Current Transients

In this paper, we report on an analysis carried out by using cyclic voltammetric (CV) and chronoamperometric (CA) techniques on the reaction and nucleation mechanisms of electrodeposited copper on indium-doped tin oxide (ITO)-coated glass substrates from sulfate solutions. The present investigation has been performed in an acid solution at pH 5. The Scharifker and Hills model were used to analyze current transients. At relatively low overpotentials, the copper deposition can be described by a model involving instantaneous nucleation on active sites and diffusion-controlled 3D growth. The values of diffusion coefficient D for Cu2+ ions are estimated. Atomic force microscopy (AFM) has been used to check on the samples’ surface morphology.

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