scholarly journals Electrodeposited copper on indium tin oxide. Reaction and nucleation mechanisms

2018 ◽  
Vol 1 (1) ◽  
pp. 565-571
Author(s):  
Zouaoui Ahmed

In this paper, we report on an analysis carried out by using cyclic voltammetric (CV) and chronoamperometric (CA) techniques on the reaction and nucleation mechanisms of electrodeposited copper on indium-doped tin oxide (ITO)-coated glass substrates from sulfate solutions. The present investigation has been performed in an acid solution at pH 5. The Scharifker and Hills model were used to analyze current transients. At relatively low overpotentials, the copper deposition can be described by a model involving instantaneous nucleation on active sites and diffusion-controlled 3D growth. The values of diffusion coefficient D for Cu2+ ions are estimated. Atomic force microscopy (AFM) has been used to check on the samples’ surface morphology.

Biosensors ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 118
Author(s):  
Rodica Ionescu ◽  
Raphael Selon ◽  
Nicolas Pocholle ◽  
Lan Zhou ◽  
Anna Rumyantseva ◽  
...  

Conductive indium-tin oxide (ITO) and non-conductive glass substrates were successfully modified with embedded gold nanoparticles (AuNPs) formed by controlled thermal annealing at 550 °C for 8 h in a preselected oven. The authors characterized the formation of AuNPs using two microscopic techniques: scanning electron microscopy (SEM) and atomic force microscopy (AFM). The analytical performances of the nanostructured-glasses were compared regarding biosensing of Hsp70, an ATP-driven molecular chaperone. In this work, the human heat-shock protein (Hsp70), was chosen as a model biomarker of body stress disorders for microwave spectroscopic investigations. It was found that microwave screening at 4 GHz allowed for the first time the detection of 12 ng/µL/cm2 of Hsp70.


2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.


2020 ◽  
Vol 2 ◽  
Author(s):  
Indra Sulania ◽  
R. Blessy Pricilla ◽  
G. B. V. S. Lakshmi

Nanocomposite materials are multi-phase materials, usually solids, which have two or more component materials having different chemical and physical properties. When blended together, a newer material is formed with distinctive properties which make them an eligible candidate for many important applications. In the present study, thin films of nafion (polymer) and hematite or α-Fe2O3 (nanoparticles) nanocomposite is fabricated on indium tin oxide (ITO) coated glass substrates, due to its enhanced ionic conductivity, for cholesterol biosensor applications. Scanning electron microscopy and Atomic force microscopy revealed the formation of nanorod structured α-Fe2O3 in the films. The cyclic voltammetry (CV) studies of nafion-α-Fe2O3/ITO revealed the redox properties of the nanocomposites. The sensing studies were performed on nafion-α-Fe2O3/CHOx/ITO bioelectrode using differential pulse voltammetry (DPV) at various concentrations of cholesterol. The enzyme immobilization leaded to the selective detection of cholesterol with a sensitivity of 64.93 × 10−2 μA (mg/dl)−1 cm−2. The enzyme substrate interaction (Michaelis–Menten) constant Km, was obtained to be 19 mg/dl.


Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 275
Author(s):  
Pengcheng Wang ◽  
Rodica Elena Ionescu

Round, small-sized coverslips were coated for the first time with thin layers of indium tin oxide (ITO, 10–40 nm)/gold (Au, 2–8 nm) and annealed at 550 °C for several hours. The resulting nanostructures on miniaturized substrates were further optimized for the localized surface plasmon resonance (LSPR) chemosensing of a model molecule—1,2-bis-(4-ppyridyl)-ethene (BPE)—with a detection limit of 10−12 M BPE in an aqueous solution. All the fabrication steps of plasmonic-annealed platforms were characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM).


2013 ◽  
Vol 537 ◽  
pp. 109-113
Author(s):  
Xi Wei Qi ◽  
Xiao Yan Zhang ◽  
Xuan Wang ◽  
Hai Bin Sun ◽  
Jian Quan Qi

A series of Dy doped La and Sc solution of BiFeO3 thin films have been prepared by using spin-coating process on conductive indium tin oxide (ITO)/glass substrates, which a simple sol-gel possess is applied and annealed at 500°C. With the increase of content of Dy, the strongest peak (110) of La and Sc solution BiFeO3 film tends to further broaden. There is no second phase existence within the present Dy doping level. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 film was about 370 nm. For Dy doping level is 0.05, the maximum double remanent polarization 2Pr of as-prepared BiFeO3 thin film is15.44 μC/cm2. Image of atomic force microscopy indicated that the root-mean-square surface roughness value of as-prepared BiFeO3 thin film is 2.11 nm. The dielectric constant of as-prepared films tends to firstly increase and then decrease with the increase of Dy content


e-Polymers ◽  
2008 ◽  
Vol 8 (1) ◽  
Author(s):  
María Angélica del Valle ◽  
María Belén Camarada ◽  
Fernando Díaz ◽  
Gastón East

AbstractThe nucleation and growth mechanism (NGM) for the electro-oxidation of 3,4-ethylenedioxythiophene (EDOT) in acetonitrile on platinum and tin(IV) oxide electrodes was determined by analyzing the potentiostatic current-time transients inferred from electrocrystallization theory. The measurements were complemented by using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Preliminary studies performed to establish the working conditions for the potentiostatic technique using cyclic voltammetry (CV) demonstrated that under the working conditions employed herein the best potential scan-rate to obtain electrodeposits of poly(EDOT) was 50 mV·s-1. The prepared polymer displayed electrochromic properties and p- and n-doping, the p-doping being chemically reversible. In addition, it was observed that the electropolymerization mechanisms on both electrode materials were a combination of two contributions: progressive nucleation, followed by diffusion-controlled tridimensional growth, PN3Ddif; and instantaneous nucleation followed by three-dimensional growth under charge transfer control, IN3Dct. At shorter times, the IN3Dct contribution prevail giving rise to conical deposits, while at longer electrolysis times the polymeric deposit is made of granules, corresponding to the PN3Ddif mechanism. The electrode material has no effect at all on the global mechanism, but affects the time at which either contribution predominates. However, the morphological predictions made from the NGMs must be corroborated by other techniques before using the data to control the deposit to be prepared.


2015 ◽  
Vol 16 (2) ◽  
pp. 286
Author(s):  
Hadaate Ullah ◽  
Shahin Mahmud ◽  
Fahmida Sharmin Jui

<p>Indium-tin oxide (ITO) which is optically transparent is referred as a “universal” electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is scientifically proved that the performance of OLEDs raises up significantly by exposing the ITO surface to oxygen plasma. This study employs conducting atomic force microscopy (C-AFM) for unique nanometer-scale mapping of the local current density of a vapor-deposited ITO film. Indium Tin Oxide (ITO) thin films have been prepared by using the reactive evaporation method on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays a vital role in controlling the electrical properties of the ITO thin films. The resistivity and the electrical conductivity were also investigated. The electrical resistivity of 3.10 x10 <sup>–6</sup> Ωm has been obtained with a deposition rate of 2 nm/min.</p>


2014 ◽  
Vol 970 ◽  
pp. 102-105
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low

In this work, silicon dioxide (SiO2) films were fabricated on indium tin oxide (ITO) coated glass substrates by radio frequency (RF) magnetron sputtering deposition technique. The deposition rate of the magnetron sputtered SiO2 films was investigated. The SiO2 films were characterized with the atomic force microscopy (AFM) for their surface topology. In addition, the electrical insulating strength of the magnetron sputtered SiO2 was examined.


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