Effect of Annealing on the Morphology and Photoluminescence of ZnO Thin Films Prepared by RF Magnetron Sputtering

2016 ◽  
Vol 851 ◽  
pp. 90-93 ◽  
Author(s):  
Chia Ti Wu ◽  
Yueh Chien Lee ◽  
Yigh Pyng Lin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Sem Images ◽  
Small Grains ◽  
Related Level ◽  
Scanning Electron

In this work, the influence of thermal annealing on the morphologies and optical properties of zinc oxide (ZnO) thin films grown on Si and glass substrate has been investigated by scanning electron microscopy (SEM) and photoluminescence (PL) measurements. SEM images show the increase of the grain size after annealing treatment, which can be attributed to the coalescence of small grains as an effect of the increment of the energy on the surface. The observed NBE emission of PL spectra can evidence the reduction of defect-related level and improvement of crystal quality of the annealed ZnO thin films.

Fabrication of Ultra Thick Ferromagnetic Structures in Silicon

2004 ◽  
Author(s):  
Debbie G. Jones ◽  
Albert P. Pisano
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Saturation Magnetization ◽  
Silicon Wafer ◽  
Fabrication Process ◽  
Sem Images ◽  
Deep Reactive Ion Etching ◽  
Scanning Electron

A novel fabrication process is presented to create ultra thick ferromagnetic structures in silicon. The structures are fabricated by electroforming NiFe into silicon templates patterned with deep reactive ion etching (DRIE). Thin films are deposited into photoresist molds for characterization of an electroplating cell. Results show that electroplated films with a saturation magnetization above 1.6 tesla and compositions of approximately 50/50 NiFe can be obtained through agitation of the electrolyte. Scanning electron microscopy (SEM) images show that NiFe structures embedded in a 500 μm thick silicon wafer are realized and the roughening of the mold sidewalls during the DRIE aids in adhesion of the NiFe to the silicon.

Structural Properties of Sn-Doped ZnO Thin Films Deposited on Glass Substrate Using Sol-Gel Immersion Method

2015 ◽  
Vol 1109 ◽  
pp. 568-571
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
M.H. Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Zinc Oxide ◽  
Glass Substrate ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Immersion Method ◽  
Doped Zno ◽  
Scanning Electron

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).

scholarly journals The Formation of in-rich Regions at The Perphery of The Inverted Hexahonal Pits of InGaN thin-films Grown by Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 675-681
Author(s):  
P. Li ◽  
S. J. Chua ◽  
M. Hao ◽  
W. Wang ◽  
X. Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Vapor Phase ◽  
Room Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Edge ◽  
Sem Images ◽  
Scanning Electron

InGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In–rich regions formed at the periphery of the hexagonal pits.

Physical Properties of Nano-Structured Zinc Oxide Thin Films Deposited by Radio-Frequency Magnetron Sputtering

2013 ◽  
Vol 667 ◽  
pp. 495-500 ◽  
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Particle Size ◽  
Atomic Force Microscopy ◽  
Zno Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures ◽  
Scanning Electron

In this work, ZnO thin films were deposited by RF Magnetron sputtering at different substrate temperatures in the range of 100-400oC on glass substrate. The thin films were characterized using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and I-V measurement, for morphology and electrical properties study. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to study the structural and morphology of the thin films. The particle size varied from 41nm to 146nm showing that the nucleation of ZnO thin films as the substrate temperatures increased. Higher particle size was observed as the substrate temperatures increased up to 400oC as well as high conductivity of thin films at 400oC.

Structural Properties of Deposited ZnO Thin Films on Flexible Substrates at Various Substrate Temperatures and RF Power

2012 ◽  
Vol 576 ◽  
pp. 598-601
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Hanafi Ani Mohd ◽  
Rusop Mahmood Mohamad
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Flexible Substrates ◽  
Rf Power ◽  
Sem Images ◽  
Substrate Temperatures

ZnO thin films were deposited on Teflon substrates by RF magnetron sputtering at different substrate temperature and different RF power. In this work, we investigated the dependence of the deposition rate and also the ZnO physical and electrical properties on the substrate temperature and RF power. It is observed that the deposition rate increased as the temperature and RF power increased. FE-SEM images confirmed that microstructure of the thin films consists of nanoparticles. XRD data confirmed that the ZnO thin films at various RF power and substrate temperature have (002) structure.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

scholarly journals Titanium-Niobium Alloy Thin Films at Substrate Temperature (100C,200C and 300C) using Field Emission Scanning Electron Microscopy

2019 ◽  
Vol 8 (2S11) ◽  
pp. 3943-3947
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Grain Size ◽  
Substrate Temperature ◽  
Elemental Composition ◽  
Field Emission ◽  
Rf Magnetron Sputtering ◽  
Niobium Alloy ◽  
Scanning Electron

This study reports on microstructural characteristics of Titanium-Niobium thin films deposited by RF Magnetron sputtering on glass substrate as a function of substrate temperature. The salient features of Ti-Nb films have been investigated by using high quality images of Field emission scanning electron microscopy (FESEM) and EDX, which enables the study of the film microstructure, elemental composition and grain size. The grain size is found to be sensitive to the Nb content at all substrate temperatures studied for all compositions. Further, the Grain size also exhibited the composition dependence; it reduces drastically from 114 nm for alloy Ti90Nb10 to 21 nm for alloy Ti50Nb50. EDX analysis of the thin film samples validates their elemental composition.

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