Effect of oxygen flow rate on the low temperature deposition of titanium monoxide thin films via electron beam evaporation

2019 ◽  
Vol 37 (3) ◽  
pp. 031505
Author(s):  
Mustafa Burak Cosar ◽  
Kerem Cagatay Icli ◽  
Macit Ozenbas
2014 ◽  
Vol 602-603 ◽  
pp. 1004-1008
Author(s):  
Yang Qiu ◽  
De Yi Meng ◽  
Yu Feng Chen ◽  
Chen Kui Zu

Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by ion-assisted electron beam evaporation method, high purity ITO particles (In2O3: SnO2 = 9:1 Wt%) were used as source material. Properties such as microstructure, morphology and mechanical properties were investigated by X-ray diffractometer, SEM and scratch tester, respectively. Meanwhile, lattice constant a, crystal grain size and residual stress situation of films as-deposited were calculated and discussed in detail. The results indicated that all of the films as-deposited were polycrystalline and represented [111] preferential orientation. With the increasing of the oxygen flow rate, grain size and surface roughness of films as-deposited decreased, and inner stress remained in film increased. There were two types of failure mode occurred in ITO films according to different stress situation. Relative high level of residual stress improved the mechanical properties of ITO films in a certain extent.


2014 ◽  
Vol 1024 ◽  
pp. 64-67 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Muhamad Uzair Shamsul ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah

The paper presents the memristive behavior of sputtered titania thin films on ITO substrate. Titania thin films were deposited by RF magnetron sputtering method while varying the oxygen flow rate of (O2/ (O2 + Ar) x100 = 10, 20 and 30 %) during deposition process. The effect of oxygen flow rate to the structural properties was studied including the physical thickness, and also the effect towards switching behavior. It was found that sample deposited at 20 % oxygen flow rate gave better memristive behavior compared to other samples, with larger ROFF/RON ratio of 9. The characterization of memristive behavior includes the effect of electroforming process and successive of I-V measurements are discussed.


2018 ◽  
Vol 482 ◽  
pp. 203-207 ◽  
Author(s):  
Lishuan Wang ◽  
Yugang Jiang ◽  
Chenghui Jiang ◽  
Huasong Liu ◽  
Yiqin Ji ◽  
...  

2021 ◽  
Vol 903 ◽  
pp. 51-56
Author(s):  
Lavanya Mekala ◽  
Sunita Ratnam Srirangam ◽  
Rajesh Kumar Borra ◽  
Subba Rao Thota

In the present work, reactive DC magnetron sputtering method is used to deposit TiO2 thin films on glass substrates. The structural, surface morphology and optical studies of TiO2 thin films were discussed by varying the oxygen flow rates from 1 to 4 sccm. X-ray diffraction patterns of TiO2 thin films show amorphous nature. The surface morphological and elemental composition of TiO2 thin films were examined by field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. From the optical absorption spectra, the shifting of absorption edge towards the longer wavelength leads to the decrement of optical bandgap from 3.48 to 3.19 eV with an increase of oxygen flow rate from 1 to 4 sccm.


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