Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method

Intergrown superlattice Bi3TiNbO9–Bi4Ti3O12(BTN–BIT) and SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor thin films are crystallized in the desired intergrown superlattice BTN–BIT and SBT–BIT structures annealed at 700°C. Synthesized BTN–BIT and SBT-BIT thin films exhibited good ferroelectric properties and excellence fatigue endurance. BTN–BIT thin films showed a Prvalue approximately 19.1µC/cm2and a memory window of 0.7V. Although a little smaller Prvalue and memory window were observed for the SBT–BIT thin films, the squareness of a P–E hysteresis loop was superior to that of BTN–BIT thin films. Also, the SBT–BIT thin films had more excellence fatigue endurance compared with BTN–BIT thin films.

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Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.197-198.1781 ◽

2011 ◽

Vol 197-198 ◽

pp. 1781-1784

Author(s):

Hua Wang ◽

Jian Li ◽

Ji Wen Xu ◽

Ling Yang ◽

Shang Ju Zhou

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Annealing Temperature ◽

Ferroelectric Properties ◽

Sol Gel ◽

Hysteresis Loops ◽

Si Substrates ◽

Gel Processing ◽

Coercive Electric Field ◽

Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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Effects of Bi doping on dielectric and ferroelectric properties of PLBZT ferroelectric thin films synthesized by sol–gel processing

Bulletin of Materials Science ◽

10.1007/s12034-013-0499-3 ◽

2013 ◽

Vol 36 (3) ◽

pp. 389-393 ◽

Cited By ~ 5

Author(s):

HUA WANG ◽

LI LIU ◽

JI-WEN XU ◽

CHANG-LAI YUAN ◽

LING YANG

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Sol Gel ◽

Ferroelectric Thin Films ◽

Bi Doping ◽

Gel Processing

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Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

Journal of Materials Chemistry C ◽

10.1039/c4tc02886d ◽

2015 ◽

Vol 3 (9) ◽

pp. 2115-2122 ◽

Cited By ~ 43

Author(s):

Wei Sun ◽

Jing-Feng Li ◽

Qi Yu ◽

Li-Qian Cheng

Keyword(s):

Thin Films ◽

Phase Transition ◽

Sol Gel ◽

Orthorhombic Phase ◽

High Quality ◽

Si Substrates ◽

Bifeo3 Thin Films ◽

Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

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Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.378 ◽

2014 ◽

Vol 633 ◽

pp. 378-381

Author(s):

Bei Li ◽

X.B. Liu ◽

M. Chen ◽

X.A. Mei

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

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Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.105-106.259 ◽

2010 ◽

Vol 105-106 ◽

pp. 259-262 ◽

Cited By ~ 1

Author(s):

X.A. Mei ◽

Min Chen ◽

A.H. Cai ◽

K.L. Su ◽

Chong Qing Huang ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Rf Magnetron Sputtering ◽

Si Substrates ◽

Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

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Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.815.171 ◽

2015 ◽

Vol 815 ◽

pp. 171-175

Author(s):

Hong Cheng Liu ◽

Wei Jun Zhang ◽

Xiao Chen Zhang ◽

Qian Yu ◽

Jue Wang

Keyword(s):

Thin Films ◽

Coercive Field ◽

Remnant Polarization ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Sol Gel ◽

Ferroelectric Thin Films ◽

Phase Development ◽

Sol Gel Process ◽

A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

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Ferroelectric Properties and Crystalline Structures of BaMgF4 Thin Films Grown on Pt(111)/SiO2/Si(100)

MRS Proceedings ◽

10.1557/proc-472-75 ◽

1997 ◽

Vol 472 ◽

Author(s):

Masashi Moriwaki ◽

Koji Aizawa ◽

Eisuke Tokumitsu ◽

Hiroshi Ishiwara

Keyword(s):

Thin Films ◽

Hysteresis Loop ◽

Ferroelectric Properties ◽

Memory Window ◽

Crystalline Quality ◽

Crystalline Structures ◽

Small Grains

ABSTRACTCrystalline quality and ferroelectric properties of (120)-oriented BaMgF^BMF) films grown on Pt(111)/SiO2/Si(100) and n-Si(111) substrates have been investigated. The BaMgF4 films grown on Pt(111) have large and flat grains, while the films on Si(111) have small grains. The C-V curve of BaMgF4/Pt(111)/SiO2/Si(100) diodes showed a hysteresis loop with a memory window of 3.8V.

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Effects of Annealing Temperature on Structure and Properties of PLBZT Ferroelectric Thin Films Synthesized by Sol-Gel Processing

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.602-604.1461 ◽

2012 ◽

Vol 602-604 ◽

pp. 1461-1464

Author(s):

Hua Wang ◽

Li Liu ◽

Ji Wen Xu ◽

Ling Yang ◽

Shang Ju Zhou

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Annealing Temperature ◽

Sol Gel ◽

Pyrochlore Phase ◽

Ferroelectric Thin Films ◽

Structure And Properties ◽

Maximum Value ◽

Processing Effects ◽

Gel Processing

[Pb0.95(La0.6Bi0.4)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm2 due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10-9 A/cm2 can be observed in PLBZT thin films when the annealing temperature is 550°C.

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Size Effects and Domains in Ferroelectric Thin Film Actuators

MRS Proceedings ◽

10.1557/proc-433-363 ◽

1996 ◽

Vol 433 ◽

Cited By ~ 36

Author(s):

S. Trolier-Mckinstry ◽

C. A. Randall ◽

J. P. Maria ◽

C. Theis ◽

D. G. Schlom ◽

...

Keyword(s):

Thin Films ◽

Grain Size ◽

Domain Walls ◽

Sol Gel ◽

Ferroelectric Thin Film ◽

Ferroelectric Thin Films ◽

Grain Sizes ◽

Average Grain Size ◽

Ferroelectric Domains ◽

Gel Processing

AbstractFerroelectric thin films typically differ from bulk ceramics in terms of both the average grain size and the degree of stress imposed on the film by the substrate. Studies on bulk ceramics have demonstrated that the number of domain variants within grains depends on the grain size for sizes <˜lμm. This can diminish the poling efficiency of the material. Since most thin films show primary grain sizes well below a micron, similar effects should be observed in films. In addition, since the perovskite ferroelectrics contain ferroelastic as well as ferroelectric domains, it seems clear that stress in thin films may markedly alter the degree to which domain walls contribute to the observed properties. In this paper, the relative importance of these factors are discussed for several types of ferroelectric thin films. Films have been prepared by pulsed laser deposition, magnetron sputtering, and by sol-gel processing. It has been found that epitaxial BaTiO3 films are ferroelectric at 77K down to thicknesses as low as ˜ 60nm. Data on the low and high field electrical properties are reported as a function of temperature, the film crystallinity, and film thickness for representative perovskite films.

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