Growth Kinetics of Intermetallic Compounds at the Interface of Liquid Sn-9Zn/Cu

2011 ◽  
Vol 233-235 ◽  
pp. 2323-2327
Author(s):  
Hui Zhen Huang ◽  
Xiu Qin Wei ◽  
Lang Zhou
Keyword(s):  
Activation Energy ◽  
Intermetallic Compound ◽  
Intermetallic Compounds ◽  
Solder Alloy ◽  
Growth Kinetics ◽  
Layer Growth ◽  
Experimental Results ◽  
Cu Substrate ◽  
Diffusion Mechanisms ◽  
Kinetics Of

The morphology and growth of the intermetallic compound (IMC) formed between liquid Sn-9Zn eutectic solder alloy and Cu at 220-260°C was investigated. Experimental results showed that γ-Cu5Zn8 was present at the Sn-9Zn/Cu interface as the reaction product. The IMC layer growth follows the parabolic-growth law, which indicates that the growth of the IMC is controlled by the diffusion mechanisms. The activation energy of γ-Cu5Zn8 layer growth for liquid Sn-9Zn reacting with Cu substrate is determined as 50.5 KJ/mol.

Enhanced Growth Kinetics of Intermetallic Compounds between Bi-Containing Sn-3.5Ag Solders and Cu Substrate during Aging

2005 ◽  
Vol 475-479 ◽  
pp. 2627-2630
Author(s):  
Soon Tae Kim ◽  
Joo Youl Huh
Keyword(s):  
Growth Rate ◽  
Intermetallic Compounds ◽  
Solder Alloy ◽  
Interfacial Reaction ◽  
Growth Kinetics ◽  
Cu Substrate ◽  
Reaction Barrier ◽  
Cu3sn Layer ◽  
Cu6sn5 Layer ◽  
Kinetics Of

The effect of adding Bi to a eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compounds (IMCs) in solder/Cu joints was examined at the aging temperatures of 130°C, 150°C and 180°C. At 150°C and 180°C, the growth rate of the Cu6Sn5 layer was significantly enhanced, but that of the Cu3Sn layer was rather reduced with increasing Bi content up to 12 wt.%. At 130°C, however, both the η and ε layers appeared to grow faster as the Bi content in the solder was increased to 12 wt.%. These results suggest that the accumulation of Bi ahead of the Cu6Sn5 layers can affect not only the interfacial reaction barrier but also the local thermodynamics at the interface between the Cu6Sn5 layer and the solder.

Kinetics of intermetallic compound layers and Cu dissolution at Sn1.5Cu/Cu interface under high magnetic field

2010 ◽  
Vol 25 (2) ◽  
pp. 359-367 ◽  
Author(s):  
Cong-qian Cheng ◽  
Jie Zhao ◽  
Yang Xu
Keyword(s):  
Magnetic Field ◽  
Intermetallic Compound ◽  
Lorentz Force ◽  
High Magnetic Field ◽  
Solubility Limit ◽  
Layer Growth ◽  
Ripening Process ◽  
Cu Substrate ◽  
Cu Dissolution ◽  
Kinetics Of

The kinetics of intermetallic compound (IMC) layer and Cu dissolution at Sn1.5Cu/Cu interface under high magnetic field was experimentally examined. It is found that the IMC layer growth is controlled by flux-driven ripening process. The high magnetic field promotes the growth of IMC layer, retards the dissolution of Cu substrate, and decreases the content of Cu solute at the liquid–IMC interface front. Based on the experimental results, it is considered that the magnetization induced by magnetic field promotes the ripening process for IMC layer growth. The Lorentz force dampening the convection and magnetization decreasing the Cu solubility limit can retard the Cu dissolution and change the solute distribution at the liquid–IMC interface front.

Growth Kinetics of Intermetallic Compound and Interfacial Reactions in Pb-Free Flip Chip Solder Bump during Solid State Isothermal Aging

2005 ◽  
Vol 486-487 ◽  
pp. 273-276
Author(s):  
Dae Gon Kim ◽  
Hyung Sun Jang ◽  
Young Jig Kim ◽  
Seung Boo Jung
Keyword(s):  
Solid State ◽  
Intermetallic Compound ◽  
Growth Kinetics ◽  
Isothermal Aging ◽  
Flip Chip ◽  
Compound Layer ◽  
Layer Growth ◽  
Intermetallic Compound Layer ◽  
Temperature Range ◽  
Kinetics Of

In the present work, the growth kinetics of intermetallic compound layer formed in Sn-3.5Ag flip chip solder joints by solid-state isothermal aging was examined at temperatures between 80 and 150 °C for 0 to 60 days. The bumping for the flip chip devices was performed using an electroless under bump metallization. The quantitative analyses were performed on the intermetallic compound layer thickness as a function of aging time and aging temperature. The layer growth of the Ni3Sn4 intermetallic compound followed a parabolic law within a given temperature range. As a whole, because the value of the time exponent (n) is approximately equal to 0.5, the layer growth of the intermetallic compound was mainly controlled by diffusion mechanism in the temperature range studied. The apparent activation energy of the Ni3Sn4 intermetallic was 49.63 kJ/mol.

scholarly journals Gold-Aluminium Intermetallic Compound Formation

1980 ◽  
Vol 6 (3-4) ◽  
pp. 147-150 ◽  
Author(s):  
E. Galli ◽  
G. Majni ◽  
C. Nobili ◽  
G. Ottaviani
Keyword(s):  
Activation Energy ◽  
Intermetallic Compound ◽  
Growth Kinetics ◽  
Failure Mechanisms ◽  
Main Mechanism ◽  
Compound Formation ◽  
Intermetallic Compound Formation ◽  
Failure Avoidance ◽  
Kinetics Of

During investigations of failure mechanisms and failure avoidance we have studied the kinetics and the mechanisms responsible for the growth of the Au-Al compounds. Au4Al, Au5Al2, Au2Al, AuAl, AuAl2have been observed and the growth kinetics of the Au2Al, AuAl, AuAl2follow a(time)1/2dependence. The activation energy for the growth of Au2Al is 1 eV and 1.2 eV was found for AuAl and AuAl2. The kind of compound formed depends on the samples preparation and the results indicate that the kinetics of the mixing is the main mechanism responsible for the sequence of formation of the various compounds.

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