Growth and Characterization of Indium Doped ZnO Nanowires Using Vapor Transport Deposition Method

2011 ◽  
Vol 364 ◽  
pp. 202-205 ◽  
Author(s):  
Ismardi Abrar ◽  
Chang Fu Dee ◽  
I. C. Gebeshuber ◽  
B.Y. Majlis
Keyword(s):  
Morphological Study ◽  
Zno Nanowires ◽  
Vapor Transport ◽  
Quartz Tube ◽  
Deposition Method ◽  
X Ray ◽  
Doped Zno ◽  
Zno Powder ◽  
Vapor Transport Deposition

Indium (In) doped ZnO nanowires (NWs) has been grown on silicon substrate without the use of catalyst. In conventional vapor transport deposition method, the ZnO source powder usually mixed with In dopant and placed in the middle of quartz tube. However, in this work, the graphite mixed ZnO source powder on a crucible was placed at the center of the quartz tube. While the graphite mixed In2O3was placed at the downstream of the furnace with a distance of 1 cm from the graphite mixed ZnO powder. Morphological study has been carried out using field emission scanning electron microscopy (FESEM). The result showed that the grown NWs have uniform hexagonal nanostructures. Chemical composition has been examined by energy dispersive X-ray spectroscopy (EDS). XRD spectrum of the In doped ZnO NWs has also been taken to study the crystallinity of the structure.

Characterization of Epoxy-Layered Silicates Filled with Fly Ash-Based Geopolymer

2015 ◽  
Vol 754-755 ◽  
pp. 225-229 ◽  
Author(s):  
Yusrina Mat Daud ◽  
Kamarudin Hussin ◽  
Che Mohd Ruzaidi ◽  
Azlin Fazlin Osman ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  
Keyword(s):  
Fly Ash ◽  
Morphological Study ◽  
Layered Silicates ◽  
Wide Angle ◽  
X Ray Diffraction ◽  
Compressive Properties ◽  
Epoxy Nanocomposites ◽  
Operative Method ◽  
X Ray

Several epoxy nanocomposites incorporating layered silicates and fly ash based geopolymer were analysed by utilising the wide angle X-Ray diffraction (XRD) to characterise the nanoscale dispersion of the layered silicates. The morphological study of the nanocomposites using X-ray diffraction was an operative method to identify exfoliated and intercalated structures in the nanocomposite. It was discovered that the exfoliated structure was observed in the nanocomposites filled with montmorillonite (MMT) and fly ash-based geopolymers; while the intercalated structure was found in the nanocomposites with 3wt% of MMT. The results suggest that that the addition of fly ash-based geopolymers into epoxy/MMT mixture may contribute to superior compressive properties, in comparison to those nanocomposites without geopolymer filler addition.

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

Fabrication and characterization of ultraviolet photosensors from ZnO nanowires prepared using chemical bath deposition method

2016 ◽  
Vol 119 (8) ◽  
pp. 084306 ◽  
Author(s):  
Ahmed S. Al-Asadi ◽  
Luke Alexander Henley ◽  
Sujoy Ghosh ◽  
Abdiel Quetz ◽  
Igor Dubenko ◽  
...  
Keyword(s):  
Chemical Bath Deposition ◽  
Zno Nanowires ◽  
Chemical Bath Deposition Method ◽  
Deposition Method ◽  
Fabrication And Characterization

Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires

2011 ◽  
Vol 32 (2) ◽  
pp. 154-158
Author(s):  
冯秋菊 FENG Qiu-ju ◽  
冯宇 FENG Yu ◽  
梁红伟 LIANG Hong-wei ◽  
王珏 WANG Jue ◽  
陶鹏程 TAO Peng-cheng ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Doped Zno ◽  
Fabrication And Characterization

SYNTHESIS AND CHARACTERIZATION OF ZnO NANORODS AND NANOWIRES USING PVP AS CAPPING

2009 ◽  
Vol 08 (03) ◽  
pp. 285-287 ◽  
Author(s):  
M. ESKANDARI ◽  
V. AHMADI ◽  
Sh. AHMADI
Keyword(s):  
Solution Method ◽  
Zno Nanorods ◽  
Green Emission ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Solution Method ◽  
Air Atmosphere ◽  
20 Nm

In this study, ZnO nanowires are synthesized via ZnO nanorods at low temperature by using zinc acetate dehydrate and polyvinylpyrrolidone as precursor and capping, respectively. We use chemical solution method for synthesis of ZnO nanowires. Samples are characterized by means of scanning electron microscopy and X-ray diffraction. First, the nanorods are prepared at 300°C temperature, and then they are put into the furnace under air atmosphere at 450°C for 2 h. It is observed that nanowires with 20 nm diameter are produced. Photoluminescence spectra of nanorods and nanowires are compared. It shows that intensity of ultraviolet peak in the nanowires decreases but in contrast the intensity of green emission part increases. This is because, the surface effects such as oxygen vacancies increase in the structures of ZnO .

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

scholarly journals Synthesis and characterization of Mg-doped ZnO thin-films electrochemically grown on FTO substrates for optoelectronic applications

RSC Advances ◽  
2020 ◽  
Vol 10 (66) ◽  
pp. 40467-40479
Author(s):  
R. Kara ◽  
L. Mentar ◽  
A. Azizi
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Zno Thin Films ◽  
Synthesis And Characterization ◽  
Deposition Method ◽  
Glass Substrates ◽  
Electrochemical Deposition Method ◽  
Doped Zno ◽  
Mg Doped

Mg-doped ZnO (MZO) thin films were successfully fabricated on fluorine-doped tin-oxide (FTO)-coated glass substrates by an electrochemical deposition method using aqueous electrolytes of 80 mM Zn(NO3)2 with different concentrations of Mg(NO3)2.

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