Study on TlBr Single Crystal Growth Using Improved Electro Dynamic Gradient Method

2011 ◽  
Vol 415-417 ◽  
pp. 1979-1982
Author(s):  
Zhi Ping Zheng ◽  
Jing Wang ◽  
Lin Quan ◽  
Shu Ping Gong ◽  
Dong Xiang Zhou
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Electrical Properties ◽  
Temperature Gradient ◽  
Growth Conditions ◽  
Single Crystal Growth ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray

Electro Dynamic Gradient (EDG) method was utilized for TlBr crystal growth in this paper. The influence of crystal growth conditions such as temperature gradient and growth rate on optical and electrical properties of grown TlBr crystals was investigated. The quality of TlBr crystals was characterized by infrared (IR) transmittance spectrum, X-ray diffraction, and I-V measurements.

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

scholarly journals Macrodefects in Cubic Silicon Carbide Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 375-378 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Justinas Palisaitis ◽  
Remigijus Vasiliauskas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Temperature Gradient ◽  
Early Stage ◽  
Growth Conditions ◽  
Temperature Ramp ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

Effect of Marangoni Convection on InSb Single Crystal Growth by Horizontal Bridgman Method

2001 ◽  
Vol 692 ◽  
Author(s):  
K. Kodera ◽  
A. Kinoshita ◽  
K. Arafune ◽  
Y. Nakae ◽  
A. Hirata
Keyword(s):  
Crystal Growth ◽  
Binary System ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Grown Crystal ◽  
Marangoni Convection ◽  
Single Crystal Growth ◽  
Control Technique ◽  
Growth System

AbstractIt is necessary to clarify the effect of Marangoni convection on single crystal growth from a melt in order to improve the quality of the grown crystal. Particularly, the deviation of crystalmelt (C-M) interface from a planar shape is a major problem because it may deteriorate the quality of the grown crystal. In this paper, we investigated the effect of thermal and solutal Marangoni convection on C-M interface shape in an In-Sb binary system by the horizontal Bridgman (HB) method. The C-M interface concavity strongly depends on the cooling rate and the temperature gradient under uniform concentration distribution conditions in the melt. A large concavity was observed at low cooling rates and high temperature gradient conditions. The concavity was found to be caused by thermal Marangoni convection, by taking Péclet number into account. Then, we varied the composition of the In-Sb binary system to induce solutal Marangoni convection intentionally. The C-M interface was kept planar in case solutal Marangoni convection occurred in the direction opposite to the thermal one. Therefore, we believe that the utilization of solutal Marangoni convection will be a new control technique to make the C-M interface planar for the HB system. From these results, it was clarified that Marangoni convection plays a significant role in the HB crystal growth system.

Lattice constant variation in GaN:Si layers grown by HVPE

2002 ◽  
Vol 743 ◽  
Author(s):  
A. Usikov ◽  
O. V. Kovalenkov ◽  
M. M. Mastro ◽  
D. V. Tsvetkov ◽  
A. I. Pechnikov ◽  
...  
Keyword(s):  
Defect Formation ◽  
Strain Relaxation ◽  
Growth Conditions ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Proper Selection ◽  
X Ray ◽  
Lattice Constants ◽  
Si Doping ◽  
Selection Of

ABSTRACTThe structural, optical, and electrical properties of HVPE-grown GaN-on-sapphire templates were studied. The c and a lattice constants of the GaN layers were measured by x-ray diffraction. It was observed that the c and a lattice constants vary non-monotonically with Si-doping. The proper selection of Si-doping level and growth conditions resulted in controllable strain relaxation, and thus, influenced defect formation in GaN-on-sapphire templates. It was also observed that HVPE homoepitaxial GaN layers grown on the templates have better crystal quality and surface morphology than the initial templates.

scholarly journals Use of Growth-Rate/Temperature-Gradient Charts for Defect Engineering in Crystal Growth from the Melt

Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 909
Author(s):  
Thierry Duffar
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Temperature Gradient ◽  
Growth Conditions ◽  
Industrial Applications ◽  
Physical Models ◽  
Production Yield ◽  
Defect Engineering ◽  
Pedagogic Tool ◽  
Simple Growth

As the requirements in terms of crystal defect/quality and production yield are generally contradictory, it is necessary to develop methods in order to find the best compromise for the growth conditions of a given crystal. Simple growth-rate/temperature-gradient charts are a possible tool in this respect. After the recall of the classical analytical equations useful for describing the process and defect engineering, a simple pedagogic case explains the building and use of such charts. The more complex application to the directional casting of photovoltaic Si necessitated the development of new physical models for twinning and equiaxed growth. This allowed plotting charts that proved useful for industrial applications. The conclusions discuss the drawbacks and advantages of the method. It finally proves to be a pedagogic tool for teaching crystal growth engineering.

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

Die Kristall- und Molekülstruktur von Tris(dimethylamino)boran / The Crystal and Molecular Structure of Tris(dimethylamino)borane

1982 ◽  
Vol 37 (10) ◽  
pp. 1230-1233 ◽  
Author(s):  
Günter Schmid ◽  
Roland Boese ◽  
Dieter Bläser
Keyword(s):  
Molecular Structure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Crystal And Molecular Structure ◽  
Melting Process ◽  
Single Crystal Growth ◽  
Zone Melting ◽  
X Ray Diffraction ◽  
X Ray

Abstract Tris(dimethylamino)borane, X-ray The crystal and molecular structure of tris(dimethylamino)borane, a liquid at room temperature, has been determined by single-crystal X-ray diffraction methods at - 116°C. The single-crystal growth was accomplished by means of a miniature zone melting process on the diffractometer. The structure data are compared with those of other aminoboranes.

Single Crystal Growth and Thermoelectric Properties of Ce5Cu19P12

1998 ◽  
Vol 545 ◽  
Author(s):  
K. J. Proctor ◽  
F. J. DiSalvo
Keyword(s):  
Electrical Resistivity ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Single Crystal Growth ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Resistivity

AbstractSingle crystals of the known ternary cerium intermetallic Ce5Cu19P12were grown by Sn flux and I2transport methods. The long axis of the black hexagonal needles was confirmed to be the c-axis by single crystal X-ray diffraction. Electrical resistivity of both single crystals and a pressed pellet was measured from 4 - 300 K; the room temperature resistivity is about 400 μΩ-cm for the needle axis of the crystals and about 5 mΩ-cm for the pressed pellet. The thermopower of the pressed pellet was found to be 34 μV/K at room temperature.

Defects and Surfactant Action of Antimony on GaAs and GaAs1-xNx on GaAs [100] by Molecular Beam Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
W. K. Cheah ◽  
W. J. Fan ◽  
S. F. Yoon ◽  
S. Wicaksono ◽  
R. Liu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dilute Nitride ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
X Ray ◽  
Related Defect

ABSTRACTLow temperature (4.5K) photoluminescence (PL) measurements of GaAs(N):Sb on GaAs grown by solid source molecular beam epitaxy (MBE) show a Sb-related defect peak at ∼1017nm (1.22eV). The magnitude of the Sb-related impurity PL peak corresponds in intensity with the prominence of the additional two-dimensional [115] high-resolution x-ray diffraction (HRXRD) defect peaks. The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb and a Sb flux ≥ 1.3×10−8 Torr is needed to invoke the surfactant behavior in III-V dilute nitride MBE growth for a growth rate of 1μm/hr.

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